Abstract: The present invention provides a process for producing compounds useful as raw materials for various fluororesins in high yields in few steps from inexpensive and readily available starting materials. The following compound (1) and the following compound (2) are reacted to form the following compound (3), then the compound (3) is fluorinated in a liquid phase to form the following compound (4), and the ester bonds in the compound (4) are dissociated to form the compound (5), or the compound (5) and the compound (6). HOCH2-Q-O—(CH2)3—OH??(1), CRBCOX??(2), RBCOOCH2-Q-O—(CH2)3—OCORB??(3), RBCOOCF2-Q-O—(CF2)3—OCORBF??(4), FCO-QF-O—(CF2)2—COF??(5), RBFCOF??(6).

Abstract: The present invention provides a process for producing compounds useful as raw materials for various fluororesins in high yields in few steps from inexpensive and readily available starting materials. The following compound (1) and the following compound (2) are reacted to form the following compound (3), then the compound (3) is fluorinated in a liquid phase to form the following compound (4), and the ester bonds in the compound (4) are dissociated to form the compound (5), or the compound (5) and the compound (6). HOCH2-Q-O—(CH2)3—OH,??(1) CRBCOX,??(2) RBCOOCH2-Q-O—(CH2)3—OCORB,??(3) RBFCOOCF2-QF-O—(CF2)3—OCORBF,??(4) FCO-QF-O—(CF2)2—COF,??(5) RBFCOF.

Abstract: A fluorosulfonyl group-containing compound having a high polymerization reactivity, a process for its production, a sulfonyl group-containing polymerizable monomer led from the sulfonyl group-containing compound, and a polymer obtainable by polymerizing the sulfonyl group-containing polymerizable monomer

Abstract: Each of patterns on two types of photomasks, including identical central pattern portions, each having a line pattern on the center of a substrate, and peripheral pattern portions around the central pattern portions, and having distances between the central pattern portion and the peripheral pattern portion different from each other, is transferred onto a wafer. Thereafter, each line width of the transferred patterns corresponding to the line pattern of each photomask is measured. The difference between each of line widths is obtained, from which the flare rate is calculated.

Abstract: Adamantane derivates which can be material compounds of a polymer excellent in etching resistance and having improved transmittance to light having a short wavelength, are produced by an economically advantageous process from readily available materials. A compound (10) is subjected to esterification reaction with a compound (11) to obtain a compound (12), which is subjected to fluorination in a liquid phase to obtain a compound (13), which is then subjected to hydrolysis or alcoholysis to obtain a compound (2), which is then reacted with a compound (15) thereby to obtain a compound (1).

Abstract: A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer; a first interlayer dielectric formed above the semiconductor layer; a plurality of first interconnect layers formed above the first interlayer dielectric; a second interlayer dielectric formed over the first interlayer dielectric and the first interconnect layers; a plurality of second interconnect layers and an electrode pad which are formed above the second interlayer dielectric, the second interconnect layers being uppermost interconnects; a passivation layer formed over the second interlayer dielectric, the second interconnect layers, and the electrode pad; and an opening formed in the passivation layer to expose at least part of the electrode pad, a minimum distance between the second interconnect layers being greater than a minimum distance between the first interconnect layers.

Abstract: A semiconductor device including: a semiconductor layer; a gate insulating layer formed above the semiconductor layer; a gate electrode formed above the gate insulating layer; a channel region formed in the semiconductor layer; a source region and a drain region formed in the semiconductor layer; and an offset insulating layer formed in the semiconductor layer and at least between the channel region and the source region and between the channel region and the drain region, a ratio of a length in a depth direction and a length in a channel length direction of the offset insulating layer being one or less.

Abstract: A compound represented by the formula AF(—COF)n, provided that AF and n have the following meanings. AF: a fluorinated adamantane residue which is an n-valent group having an n number of hydrogen atoms removed from adamantane (provided that when n is at least 2, the removed hydrogen atoms are hydrogen atoms bonded to different carbon atoms), wherein at least one of the remaining hydrogen atoms is substituted by a fluorine atom, and the remaining hydrogen atoms may be substituted by a C1-6 alkyl group or fluoroalkyl group, and n: an integer of from 1 to 4, provided the when n is 1, AF has at least one hydrogen atom.

Abstract: A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other e

Abstract: A programmable ROM block provided in an integrated circuit device includes a memory cell having a single-layer-gate structure in which a floating gate used in common as gates of a write/read transistor and an erase transistor is opposite to a control gate formed of an impurity layer through an insulating layer. The memory cell the cell was backward has a triple-well structure including a shallow well of a first conductivity type formed on a deep well of a second conductivity type, a ring-shaped shallow well of the second conductivity type which encloses the shallow well of the first conductivity type, and top impurity regions formed in the shallow well of the first conductivity type and the ring-shaped shallow well of the second conductivity type.

Abstract: The present invention provides a method for producing industrially useful fluorine-containing compounds such as a fluorinated ester compound and an acid fluoride compound. Namely, the present invention resides in a method for producing a fluorinated ester compound, which comprises fluorinating an ester compound which is an ester of a compound having hydroxyl group(s) with a compound having acyl fluoride group(s) and which has a structure which can be fluorinated, in a liquid phase to produce a fluorinated ester compound, wherein the fluorination is carried out in the form of a liquid mixture of the ester compound and the compound having acyl fluoride group(s).

Abstract: The present invention provides a process whereby fluorine atom-containing sulfonyl fluoride compound(s) useful as e.g. materials for ion-exchange membranes, can be produced efficiently and at low cost without structural limitations while solving the difficulties in production. Namely, the present invention provides a process which comprises reacting XSO2RA-E1 (1) with RB-E2 (2) to form XSO2RA-E-RB (3), then reacting (3) with fluorine in a liquid phase to form FSO2RAF-EF-RBF (4), and further, decomposing the compound to obtain FSO2RAF-EF1 (5), wherein RA is a bivalent organic group, E1 is a monovalent reactive group, RB is a monovalent organic group, E2 is a monovalent reactive group which is reactive with E1, E is a bivalent connecting group formed by the reaction of E1 with E2, RAF is a bivalent organic group formed by the fluorination of RA, etc., RBF is the same group as RB, etc., EF is a bivalent connecting group formed by the fluorination of E, etc.

Abstract: The present invention provides a fluoropolymer having excellent mechanical strength and transparency, having a high glass transition point suitable for high-temperature use, and having a high refractive index. The present invention provides a novel compound represented by the following formula (1) and a fluoropolymer comprising monomer unit (2) formed by the polymerization of such a compound. RAF, RBF, RCF, RDF: each independently is a fluorine atom, a chlorine atom, a perfluoro monovalent saturated hydrocarbon group or a perfluoro(partially chlorinated monovalent saturated hydrocarbon) group, provided that at least one of RAF, RBF, RCF and RDF is a perfluoro(partially chlorinated monovalent saturated hydrocarbon) group.

Abstract: The invention provides a process for producing a fluorine-containing compound from an inexpensive material. Namely, Compound I such as RACH2OH is reacted with Compound II such as XCORB to form Compound III such as RACH2OCORB, followed by fluorination in a liquid phase to form Compound IV such as RAFCF2OCORBF, which is converted to Compound V such as RAFCOF and/or Compound VI such as RBFCOF. RA is an alkyl group or the like, RB is a perhalogenoalkyl group or the like, RAF and RBF are fluorinated RA and RB, and X is halogen.

Abstract: The present invention provides a method for preparing a compound of CF3CF2CF2OCF?CF2 by pyrolyzing a compound expressed by CF3CF2CF2OCF(CF3)COOCF2CF(CF3)OCF2CF2CF3 in a gas phase at a temperature of from 200° C. to 500° C.

Abstract: A process for producing a fluorinated ester through a small number of steps, is presented. The process for producing a fluorinated ester, comprises a transesterification step in which RAF—COOCF2—RAF and RA—CH2OH are subjected to a transesterification reaction to obtain RAF—COOCH2—RA, and a fluorination step in which the obtained compound is fluorinated to obtain a reaction product containing RAF—COOCF2—RAF. Here, in the formulae, RA is a monovalent organic group, and RAF is the same group as RA or a monovalent organic group obtained by fluorination of RA.

Abstract: A fluorinated polyvalent carbonyl compound is produced by an economically advantageous method from inexpensive materials without requiring a complicated synthetic process step. Namely, the present invention comprises reacting a polyvalent alcohol having at least two kinds of alcohol skeletons selected among a primary alcohol, a secondary alcohol and a tertiary alcohol, with an acid halide to obtain a polyvalent ester compound, fluorinating it in a liquid phase to obtain a perfluorinated polyvalent ester compound, and cleaving the ester bonds derived from primary and secondary alcohols in the perfluoropolyvalent ester compound to obtain a fluorinated polyvalent carbonyl compound.

Abstract: The present invention provides a method for producing industrially useful fluorine-containing compounds such as a fluorinated ester compound and an acid fluoride compound. Namely, the present invention resides in a method for producing a fluorinated ester compound, which comprises fluorinating an ester compound which is an ester of a compound having hydroxyl group(s) with a compound having acyl fluoride group(s) and which has a structure which can be fluorinated, in a liquid phase to produce a fluorinated ester compound, wherein the fluorination is carried out in the form of a liquid mixture of the ester compound and the compound having acyl fluoride group(s).

Abstract: The present invention provides a process for producing compounds useful as raw materials for various fluororesins in high yields in few steps from inexpensive and readily available starting materials. The following compound (1) and the following compound (2) are reacted to form the following compound (3), then the compound (3) is fluorinated in a liquid phase to form the following compound (4), and the ester bonds in the compound (4) are dissociated to form the compound (5), or the compound (5) and the compound (6). HOCH2-Q-O—(CH2)3—OH ??(1), CRBCOX ??(2), RBCOOCH2-Q-O—(CH2)3—OCORB ??(3), RBFCOOCF2-QF-O—(CF2)3—OCORBF ??(4), FCO-QF-O—(CF2)2—COF ??(5), RBFCOF ??(6).

Abstract: The present invention provides a process A1 for producing a compound (5A), which comprises fluorinating a compound (3A-1) by liquid phase fluorination to a compound (4A-1), followed by a decomposition reaction of an ester bond; a process A2 for producing a compound (5A), which comprises fluorinating a compound (3A-2) by liquid phase fluorination to a compound (4A-2), followed by a decomposition reaction of an ester bond; and a process B for producing a compound (5B), which comprises fluorinating a compound (3B) by liquid phase fluorination to a compound (4B), followed by hydrolysis or alcoholysis. Further, the present invention provides a compound (5A) wherein n is 2 to 4, and a compound (5B) wherein n is 3 or 4.