Patents by Inventor Kuo-Lung Fang

Kuo-Lung Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10608088
    Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: March 31, 2020
    Assignee: AU OPTRONICS CORP.
    Inventors: Yu-Min Lin, Kuo-Lung Fang, Feng-Yuan Gan
  • Publication number: 20200057528
    Abstract: A touch module includes a touch panel unit, a conductive adhesive layer and a circuit board. The touch panel unit includes a substrate, a touch sensing structure disposed on the substrate, a signal transmitting structure disposed on the substrate and electrically connected to the touch sensing structure, and a protection layer covering a part of a surface of the signal transmitting structure. The protection layer and the substrate are disposed at two opposite sides of the signal transmitting structure. The conductive adhesive layer has a main portion which covers a region of the signal transmitting structure on which the protection layer is not disposed, and a cover portion which extends from the main portion and covers the protection layer. The circuit board is disposed on the conductive adhesive layer, and the circuit board and the signal transmitting structure are disposed at two opposite sides of the conductive adhesive layer.
    Type: Application
    Filed: August 15, 2019
    Publication date: February 20, 2020
    Inventors: Qi-Bin LIU, You-Zhi SHE, Kuo-Lung FANG, Jun-Rong CHEN, Shih-Hao CHEN, Jun-Ping YANG, Xiao-Xia YOU, Qi-Jun ZHENG, Jun-Jie ZHENG
  • Patent number: 10062791
    Abstract: A thin film transistor comprises a substrate, a gate electrode formed on the substrate, an electrically insulating layer covering the gate electrode, a channel layer made of a semiconductor material and formed on the electrically insulating layer, a source electrode formed on a first lateral side of the electrically insulating layer, and a drain electrode formed on an opposite second lateral side of the electrically insulating layer. The source electrode has an inner end covering a first outer end of the channel layer and electrically connecting therewith. The drain electrode has an inner end covering an opposite second outer end of the channel layer and electrically connecting therewith. An area of the channel layer adjacent to and not covered by one of the source electrode and the drain electrode has an electrical conductivity lower than the electrical conductivity of other area of the channel layer.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: August 28, 2018
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Kuo-Lung Fang, Yi-Chun Kao, Po-Li Shih, Chih-Lung Lee, Hsin-Hua Lin
  • Publication number: 20180130887
    Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
    Type: Application
    Filed: January 4, 2018
    Publication date: May 10, 2018
    Inventors: Yu-Min Lin, Kuo-Lung Fang, Feng-Yuan Gan
  • Publication number: 20180097116
    Abstract: A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer. A method for manufacturing the thin film transistor is also provided.
    Type: Application
    Filed: November 23, 2017
    Publication date: April 5, 2018
    Inventors: HSIN-HUA LIN, YI-CHUN KAO, CHIH-LUNG LEE, PO-LI SHIH, KUO-LUNG FANG
  • Patent number: 9893197
    Abstract: A thin film transistor (TFT) includes a substrate, a TFT formed on the substrate, and a passivation layer formed on the TFT. The TFT includes a gate, a source, a drain, and a channel layer. The source and the drain are respectively located at opposite sides of the channel layer. The channel layer includes oxygen ions which are implanted into the channel layer by an oxygen implanting process performed in an environment having an air pressure greater than a standard atmospheric pressure.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: February 13, 2018
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Yi-Chun Kao, Hsin-Hua Lin, Chih-Lung Lee, Kuo-Lung Fang, Po-Li Shih
  • Patent number: 9893198
    Abstract: A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The etching stopping layer is formed on a surface of the channel layer. The channel layer and the etching stopping layer are formed in a same photo etching process.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: February 13, 2018
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Kuo-Lung Fang, Yi-Chun Kao, Hsin-Hua Lin, Po-Li Shih, Chih-Lung Lee
  • Patent number: 9859440
    Abstract: A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer. A method for manufacturing the thin film transistor is also provided.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: January 2, 2018
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Hsin-Hua Lin, Yi-Chun Kao, Chih-Lung Lee, Po-Li Shih, Kuo-Lung Fang
  • Patent number: 9741862
    Abstract: A thin film transistor (TFT) includes a gate, a gate insulation layer, a channel, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The source and a drain are respectively coupled at opposite sides of the channel layer. The channel layer includes a conductor layer and a semiconductor layer. The semiconductor layer includes a first portion and a second portion respectively coupled at opposite sides of the conductor layer.
    Type: Grant
    Filed: July 7, 2015
    Date of Patent: August 22, 2017
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Po-Li Shih, Yi-Chun Kao, Chih-Lung Lee, Hsin-Hua Lin, Kuo-Lung Fang
  • Publication number: 20170125529
    Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
    Type: Application
    Filed: November 23, 2016
    Publication date: May 4, 2017
    Inventors: Yu-Min Lin, Kuo-Lung Fang, Feng-Yuan Gan
  • Patent number: 9632373
    Abstract: A display panel including a driving substrate, a display film, a first protection film, a first adhesion layer, and a sidewall structure is provided. The display film is disposed on the driving substrate. The first protection film is adhered on the display film through the first adhesion layer. The display film is located between the driving substrate and the first protection film. A material of the first adhesion layer is thermal melt-able. The sidewall structure is in contact with a side surface of the display film and includes the material of the first adhesion layer which is melted and re-solidified. In addition, a manufacture method of the display panel includes irradiating the driving substrate the first protection film and the first adhesion layer with a laser to form the sidewall structure in contact with the side surface of the display film.
    Type: Grant
    Filed: April 2, 2014
    Date of Patent: April 25, 2017
    Assignee: E Ink Holdings Inc.
    Inventors: Jiun-Ru Huang, Kuo-Lung Fang, Yu-Chi Chiu, Yao-Jen Hsieh
  • Patent number: 9634998
    Abstract: An electric system including a first wireless apparatus, a display apparatus and a second wireless apparatus is provided. A first information is encrypted to be a first encrypted information and sent wirelessly by the first wireless apparatus. The display apparatus includes a display unit and a wireless communication unit electrically connected to the display unit. The wireless communication unit receives the first encrypted information and cause the display unit to display a first representative information corresponding to the first encrypted information. The first representative information and the first encrypted information are different. The second wireless apparatus reads the first encrypted information by the wireless communication unit, and the first encrypted information is decrypted to be the first encrypted information by the second wireless apparatus.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: April 25, 2017
    Assignee: E Ink Holdings Inc.
    Inventors: Kuo-Lung Fang, Yao-Jen Hsieh, Chi-Hsun Wang
  • Patent number: 9576990
    Abstract: A thin film transistor includes a substrate, a gate electrode formed on the substrate, an electrically insulating layer formed on the substrate and covering the gate electrode, a channel layer made of semiconductor material and formed on the electrically insulating layer, an etch stop pattern formed on the channel layer and defining a first through hole and a second through hole; and a source electrode and a drain electrode formed on the etch stop pattern. The source electrode extends into the first through hole to electrically couple to the channel layer. The drain electrode extends into the second through hole to electrically couple to the channel layer. Both the channel layer and the etch stop pattern are formed by using a single mask and a single photoresist layer.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: February 21, 2017
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Kuo-Lung Fang, Yi-Chun Kao, Hsin-Hua Lin, Chih-Lung Lee, Po-Li Shih
  • Patent number: 9570653
    Abstract: A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: February 14, 2017
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Kuo-Lung Fang, Chi-Wen Kuo, Jun-Rong Chen, Chih-Hao Yang
  • Patent number: 9548392
    Abstract: A method for manufacturing a thin film transistor include following steps. A substrate is provided. A gate electrode and an electrically insulating layer are formed on the substrate. An electric conducting layer is formed on the electrically insulating layer. A first photoresist pattern layer is formed on the electric conducting layer. A portion of the electric conducting layer which is not covered by the first photoresist pattern layer is etched to form an electric conduction layer. A semiconductor layer is formed on the electric conduction layer. A second photoresist pattern layer is formed. A portion of the semiconductor layer which is not covered by the second photoresist pattern layer is etched to form the channel layer covering the electric conduction layer. A source electrode and a drain electrode are formed at the two lateral portions of the channel layer respectively. The thin film transistor is also provided.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: January 17, 2017
    Assignee: HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Po-Li Shih, Yi-Chun Kao, Chih-Lung Lee, Kuo-Lung Fang, Hsin-Hua Lin
  • Patent number: 9536963
    Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
    Type: Grant
    Filed: March 7, 2007
    Date of Patent: January 3, 2017
    Assignee: AU OPTRONICS CORP.
    Inventors: Yu-Min Lin, Kuo-Lung Fang, Feng-Yuan Gan
  • Publication number: 20160351717
    Abstract: A thin film transistor (TFT) includes a gate, a gate insulation layer, a channel, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The source and a drain are respectively coupled at opposite sides of the channel layer. The channel layer includes a conductor layer and a semiconductor layer. The semiconductor layer includes a first portion and a second portion respectively coupled at opposite sides of the conductor layer.
    Type: Application
    Filed: July 7, 2015
    Publication date: December 1, 2016
    Inventors: PO-LI SHIH, YI-CHUN KAO, CHIH-LUNG LEE, HSIN-HUA LIN, KUO-LUNG FANG
  • Publication number: 20160351719
    Abstract: A method for manufacturing a thin film transistor include following steps. A substrate is provided. A gate electrode and an electrically insulating layer are formed on the substrate. An electric conducting layer is formed on the electrically insulating layer. A first photoresist pattern layer is formed on the electric conducting layer. A portion of the electric conducting layer which is not covered by the first photoresist pattern layer is etched to form an electric conduction layer. A semiconductor layer is formed on the electric conduction layer. A second photoresist pattern layer is formed. A portion of the semiconductor layer which is not covered by the second photoresist pattern layer is etched to form the channel layer covering the electric conduction layer. A source electrode and a drain electrode are formed at the two lateral portions of the channel layer respectively. The thin film transistor is also provided.
    Type: Application
    Filed: August 25, 2015
    Publication date: December 1, 2016
    Inventors: PO-LI SHIH, YI-CHUN KAO, CHIH-LUNG LEE, KUO-LUNG FANG, HSIN-HUA LIN
  • Publication number: 20160343738
    Abstract: A method for manufacturing a thin film transistor (TFT), the TFT includes a gate, a first insulation layer, a channel layer, a source, a drain, a second insulation, and a flat layer. The gate is formed on a base. The first insulation layer is formed on the base to cover the gate and the base. The channel layer is formed on the first insulation layer corresponding to the gate. The second insulation layer is formed on the base to cover the first insulation layer, the channel layer, the source, and the drain. The flat layer includes a first region and a second region and is formed on the second insulation layer. The first region and the second region respectively have different light transmittance.
    Type: Application
    Filed: August 24, 2015
    Publication date: November 24, 2016
    Inventors: YI-CHUN KAO, HSIN-HUA LIN, CHIH-LUNG LEE, KUO-LUNG FANG, PO-LI SHIH
  • Publication number: 20160343865
    Abstract: A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The etching stopping layer is formed on a surface of the channel layer. The channel layer and the etching stopping layer are formed in a same photo etching process.
    Type: Application
    Filed: June 30, 2015
    Publication date: November 24, 2016
    Inventors: KUO-LUNG FANG, YI-CHUN KAO, HSIN-HUA LIN, PO-LI SHIH, CHIH-LUNG LEE