THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
A thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer. A method for manufacturing the thin film transistor is also provided.
This application is a divisional application of U.S. Ser. No. 14/832797, filed Aug. 21, 2015 the contents of which are hereby incorporated by reference. The patent application Ser. No. 14/832797 in turn claims the benefit of priority under 35 USC 119 from Taiwanese Patent Application No. 103141866 filed on Dec. 3, 2014.
FIELDThe subject matter herein generally relates to thin film transistors, and particularly to a vertical type thin film transistor. The present disclosure is also related to a method for manufacturing such vertical type thin film transistor.
BACKGROUNDThin film transistors generally include planar type thin film transistors and vertical type thin film transistors. The planar type thin film transistors are easy to be integrated into circuits, so the planar type thin film transistors are widely used in the circuits.
Implementations of the present technology will now be described, by way of example only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts have been exaggerated to better illustrate details and features of the present disclosure.
Several definitions that apply throughout this disclosure will now be presented.
The term “coupled” is defined as connected, whether directly or indirectly through intervening components, and is not necessarily limited to physical connections. The connection can be such that the objects are permanently connected or releasably connected. The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series and the like.
The present disclosure presents a method for manufacturing a thin film transistor. The method can include: providing a substrate and successively forming a first metal layer, a second metal layer and a first photoresist layer on the substrate; patterning the first photoresist layer to form a first photoresist pattern including a first margin photoresist pattern and first middle photoresist pattern spaced apart from the first margin photoresist pattern; etching the first metal layer and the second metal layer to form a first margin metal layer corresponding to the first margin photoresist pattern, a second margin metal layer corresponding to the first margin photoresist pattern, a first middle metal layer corresponding to the first middle photoresist pattern, and a second middle metal layer corresponding to the first middle photoresist pattern; removing the first middle photoresist pattern; removing the second middle metal layer; removing the first margin photoresist pattern; forming a semiconductor layer covering the substrate, the second margin metal layer, and the first middle metal layer, removing a part of the semiconductor layer which covers the substrate to form a margin semiconductor layer on the second margin metal layer and a middle semiconductor layer on the first middle metal layer; forming a third metal layer covering the substrate, the margin semiconductor layer and the middle semiconductor layer, forming a second photoresist pattern on the third metal layer and corresponding to the middle semiconductor layer; removing the margin semiconductor layer and a part of the third metal layer which are not covered by the second photoresist pattern to form a third middle metal layer; and removing the second photoresist pattern.
The present disclosure further presents a thin film transistor. The thin film transistor can include a substrate, a gate electrode on the substrate, a first electrode located on the substrate and surrounded by the gate electrode, a second electrode located on the first electrode and surrounded by the gate electrode, and a channel layer located between the first electrode and the second electrode. The gate electrode can include a first margin metal layer on the substrate and a second metal layer located on the first margin metal layer.
In this embodiment, the substrate 210 is transparent. The substrate 210 can be a transparent glass board. The substrate 210 includes a first face facing the gate electrode 230 and the first electrode 230, and a second face opposite to the first face.
The gate electrode 220 is located on a periphery portion of the first face of the substrate 210. The gage electrode 220 can include a first margin metal layer 2611 on the periphery portion of the first face of the substrate 210 and a second margin metal layer 2621 located on the first margin metal layer 2611. In at least one embodiment, the first margin metal layer 2611 is in direct physical contact with the first face of the substrate 210.
The first electrode 230 is located on a middle portion of the first face of the substrate 210. In at least one embodiment, the first electrode 230 is in direct physical contact with the first face of the substrate 210.
The channel layer 250 is located on the first electrode 230 and over the middle portion of the first face of the substrate 210.
The second electrode 240 is located on the channel layer 250 and over the middle portion of the first face of the substrate 210.
The thin film transistor 200 defines a passage 280 between the gate electrode 220 and the first electrode 230, the channel layer 250 and the second electrode 240. The first face of the substrate 210 is not covered by the gate electrode 220 and the first electrode 230 in the passage 280. The periphery portion of the first face of the substrate 210 extends outwards at least partially beyond the gate electrode 220.
The electrically insulating layer 270 covers the gate electrode 220, the second electrode 240, and the periphery portion of the first face of the substrate 210 which extends beyond the gate electrode 220. The electrically insulating layer 270 can fill in the passage 280 and covers the first face of the substrate 210 exposed to the passage 280. The electrically insulating layer 270 in the passage 280 is located between the gate electrode 220 and the first electrode 230 to make the gate electrode 220 electrically insulated from the first electrode 230. The electrically insulating layer 270 in the passage 280 is located between the gate electrode 220 and the channel layer 250 to make the gate electrode 220 electrically insulated from the channel layer 250. The electrically insulating layer 270 in the passage 280 is located between the gate electrode 220 and the second electrode 240 to make the gate electrode 220 electrically insulated from the second electrode 240.
The first margin metal layer 2611 has a material same as that of the first electrode 230. The first margin metal layer 2611, the second margin metal layer 2621 and the second electrode 240 have materials different from each other. In at least one embodiment, the material of the first margin metal layer 2611 and the first electrode 230 can be titanium. The material of the second margin metal layer 2621 can be aluminum. The material of the second electrode 240 can be copper.
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The embodiments shown and described above are only examples. Even though numerous characteristics and advantages of the present technology have been set forth in the foregoing description, together with details of the structure and function of the present disclosure, the disclosure is illustrative only, and changes may be made in the detail, including in matters of shape, size and arrangement of the parts within the principles of the present disclosure up to, and including, the full extent established by the broad general meaning of the terms used in the claims.
Claims
1. A thin film transistor comprising:
- a substrate;
- a gate electrode, the gate electrode formed on the substrate and comprising a first margin metal layer formed on the substrate and a second metal layer located on the first margin metal layer;
- a first electrode, the first electrode located on the substrate and surrounded by the gate electrode;
- a second electrode, the second electrode located on the first electrode and surrounded by the gate electrode; and
- a channel layer, the channel layer located between the first electrode and the second electrode and surrounded by the gate electrode.
2. The thin film transistor of claim 1, wherein the gate electrode is spaced apart from the first electrode, the second electrode, and the channel layer.
3. The thin film transistor of claim 2 further comprising an electrically insulating layer formed on the substrate and covering the gate electrode and the second electrode, wherein the electrically insulating layer makes the gate electrode electrically insulated from the first electrode, the second electrode and the channel layer.
4. The thin film transistor of claim 3, wherein the electrically insulating layer is filled in a gap between the gate electrode and a combination of the first electrode, the second electrode, and the channel layer.
5. The thin film transistor of claim 1, wherein the first electrode is a source electrode of the thin film transistor, and the second electrode is a drain electrode of the thin film transistor.
6. The thin film transistor of claim 1, wherein the first margin metal layer and the first electrode are defined by a same conductive layer.
7. The thin film transistor of claim 6, wherein the the first margin metal layer and the first electrode is made of titanium.
8. The thin film transistor of claim 1, wherein the second margin metal layer is made of a material different from that of the second electrode.
9. The thin film transistor of claim 8, wherein the second margin metal layer is made of aluminum, and the second electrode is made of copper.
10. The thin film transistor of claim 1, wherein the first electrode and the second electrode are coupled to the channel layer in electrical conduction.
Type: Application
Filed: Nov 23, 2017
Publication Date: Apr 5, 2018
Inventors: HSIN-HUA LIN (New Taipei), YI-CHUN KAO (New Taipei), CHIH-LUNG LEE (New Taipei), PO-LI SHIH (New Taipei), KUO-LUNG FANG (New Taipei)
Application Number: 15/821,772