Patents by Inventor Kurtis LESCHKIES

Kurtis LESCHKIES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150295099
    Abstract: Embodiments of the invention generally provide a silicon-based photovoltaic (PV) device containing a high work-function (HWF) buffer layer disposed between a transparent conductive oxide (TCO) layer and a p-type silicon-based layer of a p-i-n junction. The PV device generally has a transparent substrate, a first TCO layer disposed on the transparent substrate, a HWF buffer layer disposed on the first TCO layer, a p-i-n junction disposed on the high work-function buffer layer, a second TCO layer disposed on the n-type silicon-based layer, and a metallic reflective layer disposed on the second TCO layer. The p-i-n junction contains an intrinsic layer disposed between a p-type silicon-based layer and an n-type silicon-based layer, and the p-type silicon-based layer is in contact with the HWF buffer layer.
    Type: Application
    Filed: January 9, 2013
    Publication date: October 15, 2015
    Inventors: Kurtis Leschkies, Steven Verhaverbeke, Roman Gouk, Robert Visser
  • Publication number: 20150251214
    Abstract: Embodiments of the invention generally include apparatus and methods for depositing nanowires in a predetermined pattern during an electrospinning process. An apparatus includes a nozzle for containing and ejecting a deposition material, and a voltage source coupled to the nozzle to eject the deposition material. One or more electric field shaping devices are positioned to shape the electric field adjacent to a substrate to control the trajectory of the ejected deposition material. The electric field shaping device converges an electric field at a point near the surface of the substrate to accurately deposit the deposition material on the substrate in a predetermined pattern. The methods include applying a voltage to a nozzle to eject an electrically-charged deposition material towards a substrate, and shaping one or more electric fields to control the trajectory of the electrically-charged deposition material. The deposition material is then deposited on the substrate in a predetermined pattern.
    Type: Application
    Filed: May 19, 2015
    Publication date: September 10, 2015
    Inventors: Kurtis LESCHKIES, Steven VERHAVERBEKE, Robert VISSER
  • Patent number: 8895351
    Abstract: The present invention generally includes an apparatus and process of forming a conductive layer on a surface of a host substrate, which can be directly used to form a portion of an electronic device. More specifically, one or more of the embodiments disclosed herein include a process of forming a conductive layer on a surface of a substrate using an electrospinning type deposition process. Embodiments of the conductive layer forming process described herein can be used to reduce the number of processing steps required to form the conductive layer, improve the electrical properties of the formed conductive layer and reduce the conductive layer formation process complexity over current state-of-the-art conductive layer formation techniques. Typical electronic device formation processes that can benefit from one or more of the embodiments described herein include, but are not limited to processes used to form solar cells, electronic visual display devices and touchscreen type technologies.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: November 25, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Kurtis Leschkies, Steven Verhaverbeke, Robert Visser
  • Publication number: 20140264354
    Abstract: The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.
    Type: Application
    Filed: March 10, 2014
    Publication date: September 18, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kurtis LESCHKIES, Steven VERHAVERBEKE, Robert VISSER, John M. WHITE, Yan YE, Dong-Kil YIM
  • Publication number: 20130302595
    Abstract: Embodiments described herein generally relate to methods of creating super-hydrophobic and super-oleophobic layers and the resulting composition of matter. A method for creating a super-hydrophobic and super-oleophobic surface can include positioning a substrate with an exposed surface in a processing chamber, injecting an electrically charged silicon-containing deposition material towards the surface of the substrate, depositing silicon-containing nanofibers onto the exposed surface of the substrate, and depositing a thin low surface energy layer over the exposed surface of the substrate and the silicon-containing nanofibers. A substrate with a super-hydrophobic and super-oleophobic surface can include a substrate with an exposed surface, one or more layers of nanofibers disposed on the exposed surface, and a thin low surface energy material deposited over both the nanofibers and the exposed surface.
    Type: Application
    Filed: March 12, 2013
    Publication date: November 14, 2013
    Inventors: Biao LIU, Han-Wen CHEN, Steven VERHAVERBEKE, Robert VISSER, Kurtis LESCHKIES
  • Publication number: 20130095252
    Abstract: Embodiments of the invention generally include apparatus and methods for depositing nanowires in a predetermined pattern during an electrospinning process. An apparatus includes a nozzle for containing and ejecting a deposition material, and a voltage source coupled to the nozzle to eject the deposition material. One or more electric field shaping devices are positioned to shape the electric field adjacent to a substrate to control the trajectory of the ejected deposition material. The electric field shaping device converges an electric field at a point near the surface of the substrate to accurately deposit the deposition material on the substrate in a predetermined pattern. The methods include applying a voltage to a nozzle to eject an electrically-charged deposition material towards a substrate, and shaping one or more electric fields to control the trajectory of the electrically-charged deposition material. The deposition material is then deposited on the substrate in a predetermined pattern.
    Type: Application
    Filed: September 20, 2012
    Publication date: April 18, 2013
    Inventors: KURTIS LESCHKIES, Steven Verhaverbeke, Robert Visser
  • Publication number: 20120164470
    Abstract: Embodiments of the invention generally provide core-sheath nanostructures and methods for forming such nanostructures. In one embodiment, a method for forming core-sheath nanostructures includes stirring an aqueous dispersion containing silver nanostructures while adding a catalytic metal salt solution to the aqueous dispersion and forming catalytic metal coated silver nanostructures during a galvanic replacement process. The method further includes stirring an organic solvent dispersion containing the catalytic metal coated silver nanostructures dispersed in an organic solvent while adding a nickel salt solution to the organic solvent dispersion, and thereafter, adding a reducing solution to the organic solvent dispersion to form silver-nickel core-sheath nanostructures during a nickel coating process.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 28, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kurtis Leschkies, Roman Gouk, Steven Verhaverbeke, Robert Visser
  • Publication number: 20120055534
    Abstract: Embodiments of the invention are directed to photovoltaic cells comprising a substantially optically transparent buffer layer on a superstrate and a photoabsorber layer on the buffer layer. The buffer layer of detailed embodiments has a work function greater than or equal to about the work function of the photoabsorber layer. Additional embodiments of the invention are directed to photovoltaic modules comprises a plurality of photovoltaic cells and methods of making photovoltaic cells and photovoltaic modules.
    Type: Application
    Filed: September 7, 2011
    Publication date: March 8, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Kurtis Leschkies, Roman Gouk, Steven Verhaverbeke, Robert Visser
  • Publication number: 20120055535
    Abstract: Embodiments of the invention are directed to photovoltaic cells comprising a textured superstrate, a front contact layer, a photoabsorber layer and a back contact layer. The textured superstrate has a plurality of craters with an average opening angle, an average aspect ratio and an average depth. Methods of making such photovoltaic cells and photovoltaic modules are also described.
    Type: Application
    Filed: September 8, 2011
    Publication date: March 8, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Roman Gouk, Steven Verhaverbeke, Kurtis Leschkies, Robert Visser
  • Publication number: 20110180133
    Abstract: This invention provides an optically transparent electrically conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanostructures in a plane, aligned into a plurality of roughly parallel continuous conductive pathways, wherein the density of the magnetic nanostructures allows for substantial optical transparency of the conductive layer. The magnetic nanostructures may be nanoparticles, nanowires or compound nanowires. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic nanostructures on the substrate and applying a magnetic field to form the nanostructures into a plurality of conductive pathways parallel to the surface of the substrate. The conductive layer may be used to provide an enhanced silicon to transparent conductive oxide (TCO) interface in thin film silicon solar cells.
    Type: Application
    Filed: April 23, 2010
    Publication date: July 28, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Steven VERHAVERBEKE, Roman GOUK, Kurtis LESCHKIES