Abstract: The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region of a semiconductor substrate. A gate electrode is formed on the gate insulation layer. An impurity region is formed in the active region adjacent the gate electrode. A silicide thin film such as a cobalt silicide thin film is formed to a thickness of less than approximately 200 Å in the impurity region.

Abstract: Pure 1,2,3,9-tetrahydro-9-methyl-3-[(2-methyl-1H-imidazol-1-yl)methyl]-4H-carbazol-4-one or a pharmaceutically acceptable salt thereof is prepared in a high yield by a simple process which reacts 1,2,3,9-tetrahydro-9-methyl-4H-carbazol-4-one with a 2-methylimidazole derivative in an organic solvent or in a mixture of an organic solvent and water in the presence of a halosilane compound.

Abstract: The present invention relates to a convection device of a microwave oven comprises a heater chamber formed on the out-side surface of a cooking chamber, a fan housing installed inside of the heater chamber so as to be rotational within a predetermined rotation range including an inlet hole where the air inside of the heater chamber flows into and a discharging port for providing the air into the cooking chamber, and a fan installed inner side of the fan housing for generating air flow provided into the cooking chamber through the discharging port. Accordingly, the present invention can provide the heated-air uniformity to the each portion inside of the cooking chamber.

Abstract: Pure -1,2,3,9-tetrahydro-9-methyl-3-[(2-methyl-1H-imidazol-1-yl)methyl]-4H-carbazol-4-one or a pharmaceutically acceptable salt thereof is prepared in a high yield by a simple process which reacts 1,2,3,9-tetrahydro-9-methyl-4H-carbazol-4-one with a 2-methylimidazole derivative in an organic solvent or in a mixture of an organic solvent and water in the presence of a halosilane compound.

Abstract: Electrostatic precipitator is disclosed, including a discharge unit having ground electrodes and discharge electrodes, and a collecting unit having collecting electrodes and positive electrodes, wherein the discharge unit is applied of a voltage enough to emit a photo-energy which can activate a photo-catalyst, and a component in the electrostatic precipitator contains the photo-catalyst, or a separate photo-catalyst filter containing the photo-catalyst is provided within a reach of the photo-energy emitted from the discharge unit , thereby the photo-energy from the discharge unit activating the photo-catalyst, whereby providing a simple structured electrostatic precipitator making sterilization and deodorization at a low cost.

Abstract: The present invention elates to a process for preparing paclitaxel represented by formula (1) characterized in that: (a) an oxazolidine derivative represented by formula (2) or its salt in which X represents halogen, is coupled with a 7-trihaloacetyl-baccatin III represented by formula (3) in which R.sub.1 represents trihaloacetyl, in a solvent in the presence of a condensing agent to produce an oxazolidine substituent-containing taxane represented by formula (4) in which X and R.sub.1 are each as previously defined; (b) the oxazolidine ring is opened in a solvent in the presence of an acid, and the product thus obtained is reacted with benzoyl chloride in the presence of a base to produce a protected paclitaxel wherein the hydroxy group at 7-position is protected with trihaloacetyl group represented by formula (5) in which R.sub.1 is as previously defined; (c) then the protecting group at 7-position is removed by ammonia or a salt of ammonia with a weak acid in a solvent.

Abstract: There is disclosed a process for growing a high-melting-point metal film steps of forming a first ion-implanted layer in a given region of a silicon substrate, in which region a second ion-implanted layer is formed; contacting a high-melting-point metal fluoride gas with the surface of the second ion-implanted layer to adhere the high-melting-point metal thereto; growing the high-melting-point metal film of a given thickness by reacting the mixture of the high-melting-point metal fluoride and silane gas; and subjecting the silicon substrate to a heat treatment, characterized in that the above third and fourth steps are alternatively repeated.

Abstract: There is disclosed a process for growing a high-melting-point metal film comprising the steps of forming a first ion-implanted layer in a given region of a silicon substrate, in which region a second ion-implanted layer is formed; contacting a high-melting-point metal fluoride gas with the surface of the second ion-implanted layer to adhere the high-melting-point metal thereto; growing the high-melting-point metal film of a given thickness by reacting the mixture of the high-melting-point metal fluoride and silane gas; and subjecting the silicon substrate to a heat treatment, characterized in that the above third and fourth steps are alternatively repeated.