Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a photoelectric conversion film disposed above the substrate. A first pixel includes a first photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. A second pixel includes a second photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion is shared by the first photoelectric conversion regions of the first and second pixels. A portion of the first photoelectric conversion regions of the respective pixels is between a light incident surface of the substrate and the vertical transistor for the respective pixel.

Abstract: A three-terminal capacitor includes a main body having a cylindrical or substantially cylindrical shape extending in a first direction and including first and second inner electrodes alternately laminated together with dielectric layers interposed therebetween, a pair of first outer electrodes on two end surfaces of the main body in the first direction and electrically connected to the first inner electrodes, and a second outer electrode electrically connected to the second inner electrodes. The main body includes a projecting portion projecting in a direction perpendicular or substantially perpendicular to the first direction at a position between the pair of first outer electrodes. The second outer electrode is provided on one surface of the projecting portion viewable when viewed in the first direction.

Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

Abstract: In a solid-state imaging element that measures a distance on the basis of a light receiving timing of reflected light, the shortest distance that can be measured is shortened. A photoelectric conversion region generates charges through photoelectric conversion. A multiplication region multiplies the generated charges. An output electrode outputs the multiplied charges. A detection circuit detects the presence or absence of photons contained in reflected light with respect to radiation light on the basis of the charges output from the output electrode. An additional electrode discharges the charges from the photoelectric conversion region in a case where a predetermined potential is applied to the additional electrode. A control circuit applies the predetermined potential to the additional electrode at a radiation timing when the radiation light is radiated.

Abstract: A metal removal agent used when removing Mg from an aluminum alloy melt whose raw material is scrap or the like and used for formation of a molten salt layer that takes in Mg from an aluminum alloy melt. The metal removal agent contains: a specific metal element one or more of Cu, Zn, or Mn; a specific halogen element one or more of Cl or Br; and Mg. The metal removal agent may also contain: a base halide that serves as a base material of the molten salt layer; and a specific metal halide that is a compound of a specific metal element and a specific halogen element. When the molten salt layer formed using the agent and the aluminum alloy melt containing Mg are brought into contact with each other, Mg is taken into the molten salt layer side from the aluminum alloy melt side and efficiently removed.

Abstract: A method with which Mg can be removed from aluminum alloy melt whose raw material is scrap or the like. Metal removal method includes processing step of forming molten salt layer in contact with aluminum alloy melt containing Mg which covers at least part of the surface of the aluminum alloy melt. This method allows Mg to be taken in from aluminum alloy melt to molten salt layer and removed. Molten salt layer contains specific halogen element that is one or more of Cl or Br and specific metal element that is one or more of Cu, Zn, or Mn. The specific metal element is supplied as an oxide of the specific metal element to the molten salt layer. At that time, the molten salt layer contains Mg. The step of removing Mg is performed by disposing a conductor that bridges the aluminum alloy melt and the molten salt layer.

Abstract: A Mg removal agent is composed of a chloride and copper oxide. The chloride contains at least Mg and one or more base metal elements selected from K, Na, and Ca. The chloride contains, for example, 0.2 to 60 mass % of MgCl2 and/or 40 to 99.8 mass % of KCl with respect to the chloride as a whole. The compounding ratio that is a mass ratio of the chloride to the copper oxide is, for example, 0.15 or more. The chloride may be a re-solidified salt or a mixed salt. At least a part of the chloride may be a mineral containing the base metal elements and Mg or a mineral-derived chloride. A preferred example of the Mg removal agent is granular flux introduced into the aluminum alloy molten metal.

Abstract: A metal purifying method having: a local heating step of heating an aluminum-based molten metal in a first region on a molten metal surface of the aluminum-based molten metal; and a local low pressure step of lowering the pressure in a second region on the molten metal surface to a pressure lower than the pressure in the first region. The second region is different from the first region. This allows a specific element to be vaporized from the second region to purify the aluminum-based molten metal. The specific element is one or more of Zn, Mg, or Pb having a saturated vapor pressure higher than that of Al. This is effective not only in a purifying method for removing a specific element from an aluminum-based molten metal but also in a method of recovering a specific element, which can be a resource, from an aluminum-based molten metal.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a photoelectric conversion film disposed above the substrate. A first pixel includes a first photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. A second pixel includes a second photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion is shared by the first photoelectric conversion regions of the first and second pixels. A portion of the first photoelectric conversion regions of the respective pixels is between a light incident surface of the substrate and the vertical transistor for the respective pixel.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Abstract: A light-receiving device according to an embodiment of the present disclosure includes a pixel array including light-receiving elements provided in respective pixels. The light-receiving elements each include a high electric field region and a photoelectric conversion region. A plurality of the light-receiving elements provided in the respective pixels includes a plurality of types of elements that have temperature regions having high photon detection efficiency (PDE). The temperature regions are different from each other and partially overlap each other.

Abstract: A sensor chip and an electronic device with SPAD pixels each including an avalanche photodiode element. The sensor chip includes a pixel area having an array of pixels, an avalanche photodiode element that amplifies a carrier by a high electric field area provided for the each of the pixels, an inter-pixel separation section that insulates and separates each of the pixels from adjacent pixels, and a wiring in a wiring layer laminated on a surface opposite to a light receiving surface of the semiconductor substrate that covers at least the high electric field area. The pixel array includes a dummy pixel area located near a peripheral edge of the pixel area. A cathode and an anode electric potential of the avalanche photodiode element arranged in the dummy pixel area are the same, or at least one of the cathode and anode electric potential is in a floating state.

Abstract: A sensor chip according to an embodiment of the present disclosure includes: a photoelectric conversion section including a multiplication region that avalanche-multiplies carriers by a high electric field region; a light-condensing section that condenses incident light toward the photoelectric conversion section; and a pixel array in which a plurality of pixels each including the photoelectric conversion section and the light-condensing section are arranged in array and at least one of a structure of the photoelectric conversion section or a structure of the light-condensing section is changed stepwise from a middle part toward an outer peripheral part.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.