Abstract: An ionic liquid having high electrochemical stability and a low melting point. An ionic liquid represented by the following general formula (G0) is provided. In the general formula (G0), R0 to R5 are individually any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, a methoxyethyl group, and a hydrogen atom, and A? is a univalent imide-based anion, a univalent methide-based anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate, or hexafluorophosphate.

Abstract: Provided is a solid-state image pickup apparatus including a crosstalk suppression mechanism included in each pixel arranged in a pixel array, the crosstalk suppression mechanism of a part of the pixels differing from that of other pixels in an effective area of the pixel array.

Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

Abstract: One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R1 to R5 are any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, and a methoxyethyl group. The other three or four of R1 to R5 are hydrogen atoms. A? is a univalent imide anion, a univalent methide anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate (BF4?), or hexafluorophosphate (PF6?).

Abstract: One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R1 to R5 are any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, and a methoxyethyl group. The other three or four of R1 to R5 are hydrogen atoms. A? is a univalent imide anion, a univalent methide anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate (BF4?), or hexafluorophosphate (PF6?).

Abstract: A power storage device with reduced initial irreversible capacity is provided. The power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte solution. In the negative electrode active material layer, the content percentage of a carbon material with an R value of 1.1 or more is less than 2 wt %. The R value refers to a ratio of a peak intensity I1360 to a peak intensity I1580 (I1360/I1580). The peak intensity I1360 and the peak intensity I1580 are observed by Raman spectrometry at a Raman shift of 1360 cm?1 and a Raman shift of 1580 cm?1, respectively. The electrolyte solution contains a lithium ion and an ionic liquid composed of an organic cation and an anion.

Abstract: A power storage device with a higher degree of safety is provided. Further, a power storage device with improved cycle life is provided. In the power storage device, an ionic liquid as a solvent of an electrolyte solution, and an exterior body is covered with a conductive component so as to prevent direct contact between a positive electrode current collector and the exterior body. This suppresses elution of the positive electrode current collector due to contact between different kinds of metals and accordingly prevents a phenomenon in which the eluted metal of the positive electrode current collector is deposited on a negative electrode and the deposited metal comes in contact with a positive electrode. Thus, an internal short-circuit caused by the contact can be prevented.

Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

Abstract: To provide an ionic liquid which has at least one of properties such as high ionic conductivity, a small reduction in ionic conductivity at a low temperature, a low melting point, and a low viscosity. To provide a power storage device having higher initial charge and discharge efficiency than a power storage device containing a conventional ionic liquid. A cyclic quaternary ammonium salt is liquid at room temperature and contains a quaternary spiro ammonium cation having an asymmetrical structure including two aliphatic rings and one or more substituents bonded to one or both of the two aliphatic rings and an anion corresponding to the quaternary spiro ammonium cation. The power storage device includes a positive electrode, a negative electrode, and a nonaqueous electrolyte containing the cyclic quaternary ammonium salt as a nonaqueous solvent.

Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

Abstract: To provide an electrolyte easily manufactured at low cost, and a power storage device including such an electrolyte. The power storage device includes a positive electrode having a positive electrode current collector and a positive electrode active material, a negative electrode having a negative electrode current collector and a negative electrode active material, and an electrolyte having 1-piperidine-1-propanesulfonic acid or 1-piperidine-1-butanesulfonic acid, which is provided between the positive electrode and the negative electrode. The capacitance can be increased when water is added to the obtained electrolyte and the temperature of the power storage device rises.

Abstract: A nonaqueous solvent having excellent reduction resistance, which can be applied to an electrolyte solution, is provided. Further, a nonaqueous solvent which can be used in a wide temperature range and applied to an electrolyte solution is provided. Furthermore, a high-performance power storage device is provided. A nonaqueous solvent containing at least an ionic liquid including an alicyclic quaternary ammonium cation having one or more substituents and a counter anion to the alicyclic quaternary ammonium cation, and a freezing-point depressant is provided. A power storage device including the nonaqueous solvent for an electrolyte solution is also provided.

Abstract: An ionic liquid having high electrochemical stability and a low melting point. An ionic liquid represented by the following general formula (G0) is provided. In the general formula (G0), R0 to R5 are individually any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, a methoxyethyl group, and a hydrogen atom, and A? is a univalent imide-based anion, a univalent methide-based anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate, or hexafluorophosphate.

Abstract: The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

Abstract: The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured.

Abstract: The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

Abstract: One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R1 to R5 are any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, and a methoxyethyl group. The other three or four of R1 to R5 are hydrogen atoms. A? is a univalent imide anion, a univalent methide anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate (BF4?), or hexafluorophosphate (PF6?).

Abstract: To provide an electrolyte easily manufactured at low cost, and a power storage device including such an electrolyte. The power storage device includes a positive electrode having a positive electrode current collector and a positive electrode active material, a negative electrode having a negative electrode current collector and a negative electrode active material, and an electrolyte having 1-piperidine-1-propanesulfonic acid or 1-piperidine-1-butanesulfonic acid, which is provided between the positive electrode and the negative electrode. The capacitance can be increased when water is added to the obtained electrolyte and the temperature of the power storage device rises.

Abstract: The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured.

Abstract: The invention proposes a method and an apparatus for attaching a plurality of components having different arrangement densities or arrangement intervals, which can achieve shorter takt time. An object is to provide a low-cost manufacturing method of a semiconductor device and a manufacturing apparatus capable of manufacturing a semiconductor device at low cost. Plural pairs of components having different arrangement densities are simultaneously attached to each other by temporarily attaching first components to a first flexible substrate while changing an arrangement interval in an X direction, and then connecting the first components to second components over a second flexible substrate while changing an arrangement interval of the first components in a Y direction.