Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

Abstract: An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.

Abstract: A recycling method for aluminum alloy is capable of offering a recycled Al alloy (melt), in which the Fe concentration is efficiently reduced, while using Al alloy scrap and the like as raw materials. The method includes: a preparation step of preparing a first melt by melting an Fe.Mn-containing material that contains Fe and Mn and an Al alloy raw material; a crystallization step of holding the first melt at a separation temperature at which an Fe compound crystallizes; and an extraction step of extracting a second melt obtained by removing at least part of the Fe compound crystallized from the first melt. The Fe.Mn-containing material preferably has a mass ratio of Mn to Fe (Mn/Fe) of, for example, 2 or more.

Abstract: An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Abstract: A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a first pixel including a first region of a first photoelectric conversion element, a first region of a second photoelectric conversion element, wherein the first and second photoelectric conversion elements are formed in the substrate, and a first vertical transistor connected to the first region of the first photoelectric conversion element. A second pixel includes a second region of the first photoelectric conversion element, a second region of the second photoelectric conversion element, and a second vertical transistor connected to the second region of the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion stores charges from the first and second regions of the first photoelectric conversion element in the first and second pixels.

Abstract: An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the PHOTODIODE substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.

Abstract: The present technology relates to a solid-state imaging element, a solid-state imaging element manufacturing method, and an electronic apparatus that make it possible to suppress both junction leakage and diffusion leakage of an FD in an FD storage sensor. The present technology includes a photodiode, a photoelectric conversion film, a diffusion layer, and an impurity layer. The photodiode and the photoelectric conversion film perform photoelectric conversion of incident light. The diffusion layer has a second polarity, which is different from a first polarity possessed by the photodiode, and stores an electric charge derived from photoelectric conversion by the photoelectric conversion film. The impurity layer includes impurities having the first polarity. The photodiode and the diffusion layer are disposed on an identical substrate in parallel with each other. The impurity layer is disposed below the diffusion layer. The present technology is applicable to solid-state imaging elements.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Abstract: An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and a photoelectric conversion film disposed above the substrate. A first pixel includes a first photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. A second pixel includes a second photoelectric conversion film region, first and second photoelectric conversion regions formed in the substrate, and a vertical transistor for the first photoelectric conversion element. The imaging device also includes a first floating diffusion. The first floating diffusion is shared by the first photoelectric conversion regions of the first and second pixels. A portion of the first photoelectric conversion regions of the respective pixels is between a light incident surface of the substrate and the vertical transistor for the respective pixel.

Abstract: A solid-state imaging device includes: a semiconductor layer having a first surface and a second surface that oppose each other; and a plurality of photodiodes stacked in the semiconductor layer. One or more photodiodes of the plurality of photodiodes also serve as a transfer path of a signal charge accumulated in other photodiodes.

Abstract: A power storage device with reduced initial irreversible capacity is provided. The power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte solution. In the negative electrode active material layer, the content percentage of a carbon material with an R value of 1.1 or more is less than 2 wt %. The R value refers to a ratio of a peak intensity I1360 to a peak intensity I1580 (I1360/I1580). The peak intensity I1360 and the peak intensity I1580 are observed by Raman spectrometry at a Raman shift of 1360 cm?1 and a Raman shift of 1580 cm?1, respectively. The electrolyte solution contains a lithium ion and an ionic liquid composed of an organic cation and an anion.

Abstract: The present technology relates to a solid-state imaging element, a solid-state imaging element manufacturing method, and an electronic apparatus that make it possible to suppress both junction leakage and diffusion leakage of an FD in an FD storage sensor. The present technology includes a photodiode, a photoelectric conversion film, a diffusion layer, and an impurity layer. The photodiode and the photoelectric conversion film perform photoelectric conversion of incident light. The diffusion layer has a second polarity, which is different from a first polarity possessed by the photodiode, and stores an electric charge derived from photoelectric conversion by the photoelectric conversion film. The impurity layer includes impurities having the first polarity. The photodiode and the diffusion layer are disposed on an identical substrate in parallel with each other. The impurity layer is disposed below the diffusion layer. The present technology is applicable to solid-state imaging elements.

Abstract: To provide an ionic liquid which has at least one of properties such as high ionic conductivity, a small reduction in ionic conductivity at a low temperature, a low melting point, and a low viscosity. To provide a power storage device having higher initial charge and discharge efficiency than a power storage device containing a conventional ionic liquid. A cyclic quaternary ammonium salt is liquid at room temperature and contains a quaternary spiro ammonium cation having an asymmetrical structure including two aliphatic rings and one or more substituents bonded to one or both of the two aliphatic rings and an anion corresponding to the quaternary spiro ammonium cation. The power storage device includes a positive electrode, a negative electrode, and a nonaqueous electrolyte containing the cyclic quaternary ammonium salt as a nonaqueous solvent.

Abstract: An ionic liquid having high electrochemical stability and a low melting point. An ionic liquid represented by the following general formula (G0) is provided. In the general formula (G0), R0 to R5 are individually any of an alkyl group having 1 to 20 carbon atoms, a methoxy group, a methoxymethyl group, a methoxyethyl group, and a hydrogen atom, and A? is a univalent imide-based anion, a univalent methide-based anion, a perfluoroalkyl sulfonic acid anion, tetrafluoroborate, or hexafluorophosphate.

Abstract: A power storage device with reduced initial irreversible capacity is provided. The power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte solution. In the negative electrode active material layer, the content percentage of a carbon material with an R value of 1.1 or more is less than 2 wt %. The R value refers to a ratio of a peak intensity I1360 to a peak intensity I1580 (I1360/I1580). The peak intensity I1360 and the peak intensity I1580 are observed by Raman spectrometry at a Raman shift of 1360 cm?1 and a Raman shift of 1580 cm?1, respectively. The electrolyte solution contains a lithium ion and an ionic liquid composed of an organic cation and an anion.