Abstract: The present invention relates to a laminate and a device fabricated using the laminate. The laminate includes a debonding layer including a polyimide resin between a carrier substrate and a flexible substrate. The adhesive strength of the debonding layer to the flexible substrate is changed by a physical stimulus. According to the present invention, the flexible substrate can be easily separated from the carrier substrate without the need for further processing such as laser or light irradiation. Therefore, the use of the laminate facilitates the fabrication of the device having the flexible substrate. The device may be, for example, a flexible display device. In addition, the device can be prevented from deterioration of reliability and occurrence of defects caused by laser or light irradiation. This ensures improved characteristics and high reliability of the device.

Abstract: The present invention relates to a laminate and a device fabricated using the laminate. The laminate includes a debonding layer including a polyimide resin having a similarity score not greater than 0.5, as calculated by Equation 1 defined in the detailed description, between a carrier substrate and a flexible substrate. According to the present invention, the flexible substrate can be easily separated from the carrier substrate without the need for further processing such as laser or light irradiation. Therefore, the use of the laminate facilitates the fabrication of the device having the flexible substrate. The device may be, for example, a flexible display device. In addition, the device can be prevented from deterioration of reliability and occurrence of defects caused by laser or light irradiation. This ensures improved characteristics and high reliability of the device.

Abstract: Three-dimensional (3D) semiconductor devices are provided. The 3D semiconductor device includes a plurality of dummy pillars penetrating each cell pad of an electrode structure and the electrode structure disposed under each cell pad. Insulating patterns of a mold stack structure for formation of the electrode structure may be supported by the plurality of dummy pillars, so transformation and contact of the insulating patterns may be minimized or prevented.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate electrodes spaced apart from each other, the plurality of stacked structures including a pair of stacked structures spaced apart from each other at a first interval in a second direction perpendicular to the first direction, and a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: The present invention relates to a laminate and a device fabricated using the laminate. The laminate includes a first polyimide resin layer between a carrier substrate and a second polyimide resin layer, wherein the first polyimide resin layer has a coefficient of thermal expansion (CTE) equal to or lower than the CTE of the second polyimide-based resin layer at a temperature of 100 to 200° C., and the adhesive strength of the first resin layer to the second resin layer decreases when a physical stimulus causing no chemical changes in the first resin layer is applied to the laminate. According to the present invention, the flexible substrate can be easily separated from the carrier substrate without the need for further processing such as laser or light irradiation. Therefore, the use of the laminate facilitates the fabrication of the device having the flexible substrate. The device may be, for example, a flexible display device.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N(0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: A non-volatile memory device includes a substrate including an active region and a field region, selection transistors and cell transistors on the active region, bit line contacts on the bridge portions, and shared bit lines electrically connected to the bit line contacts. The active region includes string portions and bridge portions. The string portions extend in a first direction and are arranged in a second direction substantially perpendicular to the first direction, and the bridge portions connect at least two adjacent string portions. Each bridge portion has a length in the first direction equal to or longer than about twice a width of each bit line contact in the first direction.

Abstract: Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.

Abstract: The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the substrate, and a wavelength conversion layer formed on the light emitting layer or on the back of the substrate. The wavelength conversion layer is formed of a Group III nitride semiconductor doped with rare earth elements. The rare earth elements include at least one of Tm, Er and Eu. According to a light emitting diode of the present invention, a desired color can be implemented in various ways by converting the wavelength of primary light emitted from a light emitting chip. Thus, the reliability and quality of products can be improved due to the uniform emission of light with a desired color. Further, since the existing semiconductor process can be utilized in the present invention, its fabrication process can be simplified, process cost and time can be reduced, and the compact products can be obtained.

Abstract: The disclosed light emitting device includes an intermediate layer interposed between the light emitting semiconductor structure and the substrate. The light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including AlxGa(1-x)N (0<x<1) and a quantum well layer including AlyGa(1-y)N (0<x<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer includes AlGaN. The intermediate layer includes AlN and has a plurality of air voids formed in the AlN. At least some of the air voids are irregularly aligned and the number of the air voids is 107 to 1010/cm2.

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.

Abstract: A method of operating an electronic device is provided. The method includes communicating data with a wireless network using a wireless communication, connecting to an external electronic device using a wired communication, exchanging data with the external device at a first data throughput using the wired communication while performing the wireless communication, and changing the first data throughput to a second data throughput while performing the wireless communication.

Abstract: Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may also include an active pattern that penetrates the stack-structure. The devices may further include a common source region adjacent the stack-structure. The devices may additionally include a strapping contact plug on the common source region.

Abstract: An apparatus and a method of recognizing an external device in a portable terminal are provided. The apparatus includes a connector connected to the external device, and a controller configured to transmit a connection message, if the portable terminal is connected to the external device through the connector, the connection message asking whether the external device supports a second connection scheme to the external device by using a first connection scheme, configured to receive a connection response message as a response to the connection message from the external device, configured to determine based on the connection response message whether the external device supports the second connection scheme, and configured to recognize at least one device supporting the second connection scheme in the external device by activating the second connection scheme, if the external device supports the second connection scheme.

Abstract: Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.

Abstract: A method and an apparatus for supporting a hibernation function in a mobile device are provided. The method includes receiving an input at an electronic device, loading, using one or more processors, a snapshot image for the electronic device in response to the input, comparing at least one portion of the snapshot image with data indicating a state of the electronic device, and updating the snapshot image using the data, based at least in part on a determination that the state of the electronic device has been changed.