Patents by Inventor Kyung Ho Lee

Kyung Ho Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEVICE AND METHOD FOR COMPRESSING/DECOMPRESSING LENS SHADING COMPENSATION COEFFICIENT
    Publication number: 20160028975
    Abstract: A lens shading compensation coefficient compression device includes: a first differential block suitable for calculating a lens shading compensation coefficient between color channels and removing redundancy between the color channels; a second differential block suitable for calculating a lens shading compensation coefficient within color channels and removing redundancy within the color channels; and an entropy coding block suitable for performing entropy coding on remaining lens shading compensation coefficients and compressing the lens shading compensation coefficients.
    Type: Application
    Filed: December 4, 2014
    Publication date: January 28, 2016
    Inventors: Kyung-Ho LEE, Sang-Dong YOO, Jong-Suk LEE, Jung-Hyun KIM
  • IMAGE SENSOR AND METHOD OF OPERATING THE IMAGE SENSOR
    Publication number: 20160021322
    Abstract: An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.
    Type: Application
    Filed: February 11, 2015
    Publication date: January 21, 2016
    Inventors: Young-Woo Jung, Kyung-Ho Lee
  • PHASE-DIFFERENCE DETECTION PIXEL AND IMAGE SENSOR HAVING THE SAME
    Publication number: 20160013231
    Abstract: A phase-difference detection pixel includes a photodiode layer on a substrate and including a recess, a light-blocking layer in the recess, a first insulating layer on the photodiode and light-blocking layers, a color filter layer on the first insulating layer, and a microlens layer on the color filter layer.
    Type: Application
    Filed: February 5, 2015
    Publication date: January 14, 2016
    Inventor: Kyung-Ho LEE
  • UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR, AND COMPUTING SYSTEM HAVING THE SAME
    Publication number: 20160014353
    Abstract: A unit pixel of an image sensor includes a charge generation unit, a signal generation unit, and a ground control transistor. The charge generation unit generates photo-charges in response to incident light and provides the photo-charges to a floating diffusion area in response to a transmission control signal. The signal generation unit generates an analog signal having a magnitude corresponding to an electrical potential of the floating diffusion area based on a reset control signal and a row selection signal. The ground control transistor is coupled between the floating diffusion area and a ground voltage, and is turned on in response to a ground control signal.
    Type: Application
    Filed: December 24, 2014
    Publication date: January 14, 2016
    Inventors: Kyung-Ho LEE, Hee-Sang KWON
  • Semiconductor power device and method of fabricating the same
    Patent number: 9236470
    Abstract: A semiconductor power device and a method of fabricating the same are provided. The semiconductor power device involving: a first conductivity type semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a second conductivity type well formed in the semiconductor substrate and the epitaxial layer; a drain region formed in the well; an oxide layer that insulates a gate region from the drain region; a first conductivity type buried layer formed in the well; a second conductivity type drift region surrounding the buried layer; and a second conductivity type TOP region formed between the buried layer and the oxide layer.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: January 12, 2016
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Francois Hebert, Young Bae Kim, Jin Woo Moon, Kyung Ho Lee
  • IMAGE SENSOR, IMAGE PROCESSING SYSTEM INCLUDING THE SAME, AND PORTABLE ELECTRONIC DEVICE INCLUDING THE SAME
    Publication number: 20160006965
    Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.
    Type: Application
    Filed: June 30, 2015
    Publication date: January 7, 2016
    Inventors: Jun Suk Lee, Jung Chak Ahn, Hee Geun Jeong, Kyung Ho Lee
  • SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20150380482
    Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.
    Type: Application
    Filed: March 13, 2015
    Publication date: December 31, 2015
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Ho Kyun AHN, Hae Cheon KIM, Jong Won LIM, Dong Min KANG, Yong Hwan KWON, SEONG IL KIM, Zin Sig KIM, Eun Soo NAM, Byoung Gue MIN, Hyung Sup YOON, Kyung Ho LEE, Jong Min LEE, Kyu Jun CHO
  • PROCESS FOR PREPARING MEROPENEM TRIHYDRATE
    Publication number: 20150353554
    Abstract: Provided is a process for the preparation of meropenem trihydrate in high purity and high yield, including using a dry methanol solvate of meropenem, which can remarkably reduce the amount of residual solvents in the resulting product, thereby obtain meropenem trihydrate in high purity.
    Type: Application
    Filed: November 21, 2013
    Publication date: December 10, 2015
    Applicant: DAEWOONG PHARMACEUTICAL CO., LTD.
    Inventors: Soo-Jin CHOI, Byung-Goo LEE, Hee-Kyoon YOON, Sung-Woo PARK, Sun-Ah JUN, Kyung-Ho LEE, Byung-Jo LIM
  • IMAGE SENSORS HAVING REDUCED INTERFERENCE BETWEEN PIXELS
    Publication number: 20150333091
    Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.
    Type: Application
    Filed: January 13, 2015
    Publication date: November 19, 2015
    Inventors: Young-Sun Oh, Yi-Tae Kim, Jung-Chak Ahn, Kyung-Ho Lee, Jun-Suk Lee
  • Multi-source JFET device
    Patent number: 9184304
    Abstract: A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: November 10, 2015
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Young Bae Kim, In Taek Oh, Kyung Ho Lee, Kwang Il Kim
  • Electronic component package
    Patent number: 9155192
    Abstract: Disclosed herein is an electronic component package including: a connection member provided on at least one surface of a substrate; an active element coupled to the substrate by the connection member; a molding part covering an exposed surface of the active element; and an additional layer formed on an exposed surface of the molding part to decrease a warpage phenomenon. In the electronic component package, the warpage phenomenon may be decreased as compared with the related art.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: October 6, 2015
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyung Ho Lee, Seung Wan Woo, Po Chul Kim, Young Nam Hwang, Suk Jin Ham
  • Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method
    Patent number: 9148599
    Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: September 29, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Chul Sul, Hirosige Goto, Kyung Ho Lee
  • CMOS Image Sensors Including Vertical Transistor and Methods of Fabricating the Same
    Publication number: 20150243693
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Application
    Filed: July 25, 2014
    Publication date: August 27, 2015
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong
  • CMOS IMAGE SENSORS HAVING A TRANSFER GATE ELECTRODE, AND METHODS OF FABRICATING CMOS IMAGE SENSORS HAVING A TRANSFER GATE ELECTRODE
    Publication number: 20150243701
    Abstract: Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature.
    Type: Application
    Filed: September 5, 2014
    Publication date: August 27, 2015
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Hee-Geun Jeong
  • In nanowire, device using the same and method of manufacturing in nanowire
    Patent number: 9099329
    Abstract: There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: August 4, 2015
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Hee Suk Chung, Gyu Seok Kim, Han Wool Kang, Kyung Ho Lee, Mi Yang Kim, Suk Jin Ham
  • Semiconductor device
    Patent number: 9099557
    Abstract: A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: August 4, 2015
    Assignee: MAGNACHIP SEMICONDUCTOR, LTD.
    Inventors: Jae-Han Cha, Kyung-Ho Lee, Sun-Goo Kim, Hyung-Suk Choi, Ju-Ho Kim, Jin-Young Chae, In-Taek Oh
  • Porous electroformed shell for patterning and manufacturing method thereof
    Patent number: 9074293
    Abstract: Disclosed are a porous electroformed shell for forming a grain pattern and a manufacturing method thereof. The method includes the step of causing an epoxy mandrel to be conductive by formation of a conductive thin film thereon; transferring a non-conductive masking pattern on the conductive thin film by using a masking film; generating and growing a fine pore at the position of the non-conductive masking pattern through electroforming; and demolding an electrodeposited layer having the fine pore from the epoxy mandrel, Through the disclosed method, precise control, both as a whole or in part, on a diameter, a formation position, and a density of a fine pore can be simply, economically, and efficiently can be carried out according to various curved shapes of the electroformed shell.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: July 7, 2015
    Assignee: MOLTEX CO., LTD.
    Inventors: Kie-Moon Sung, Man-Jae Weon, Kyung-Ho Lee, Young-Min Park
  • IMAGE SENSOR, CONFIGURED TO REGULATE A QUANTITY OF LIGHT ABSORBED THEREBY, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD
    Publication number: 20150156437
    Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.
    Type: Application
    Filed: December 22, 2014
    Publication date: June 4, 2015
    Inventors: Sang Chul SUL, Hirosige GOTO, Kyung Ho LEE
  • IMAGE SENSOR
    Publication number: 20150155328
    Abstract: In an image sensor, a photoelectric convertor is arranged in an active region of substrate and a floating diffusion area is arranged over the photoelectric convertor. A transfer transistor transfers the photo charges to the floating diffusion area from the photoelectric convertor and the transfer gate electrode has a narrow upper structure that extends downwards vertically from the top surface of the substrate and a broad lower structure that is connected to the upper structure and has a width greater than a width of the upper structure. A reading device is on the top surface of the substrate and detects the photo charges from the floating diffusion area. Accordingly, the effective gate length of the transfer gate electrode is increased, and thus, high resolution image data can be obtained in spite of the size reduction of the image sensor.
    Type: Application
    Filed: October 16, 2014
    Publication date: June 4, 2015
    Inventors: Hae-Yong PARK, Kyung-Ho LEE, Jung-Chak AHN, Sang-Jun CHOI
  • Backside illuminated image sensor and method of manufacturing the same
    Patent number: 9034682
    Abstract: A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: May 19, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-Sub Shim, Jung-Chak Ahn, Bum-Suk Kim, Kyung-Ho Lee