Patents by Inventor Kyung Ho Lee

Kyung Ho Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor
    Patent number: 10014338
    Abstract: An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: July 3, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Kyung-Ho Lee
  • INTEGRATED SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE FOR REDUCING NOISE
    Publication number: 20180182747
    Abstract: An integrated semiconductor device includes a first transistor and a second transistor formed on a semiconductor substrate, and an isolation structure located adjacent to the transistors, including deep trenches, trapping regions formed between the deep trenches, and trench bottom doping regions formed at the end of each of the deep trenches, wherein each of the trapping regions includes a buried layer, a well region formed on the buried layer, and a highly doped region formed on the well region.
    Type: Application
    Filed: August 24, 2017
    Publication date: June 28, 2018
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Hyun Chul KIM, Hee Baeg AN, In Chul JUNG, Jung Hwan LEE, Kyung Ho LEE
  • TABLET INSPECTION APPARATUS
    Publication number: 20180148273
    Abstract: A tablet inspection apparatus includes a supply unit including a rotary plate inclinedly disposed, and a transfer plate having a downwardly inclined surface, inclined outwardly on the same level as top dead center of the rotary plate while rotating with the rotary plate around the rotary plate, a first rotary unit inclinedly disposed with respect to the supply unit, and formed such that suction force is applied in a certain section in a circumferential direction, and a second rotary unit installed on one side of the first rotary unit, and formed such that suction force is applied in a certain section in a circumferential direction.
    Type: Application
    Filed: April 14, 2016
    Publication date: May 31, 2018
    Inventors: Kyung-Ho LEE, Byung-In KIM
  • Unit pixels, image sensors including the same, and image processing systems including the same
    Patent number: 9966407
    Abstract: A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: May 8, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Chan Kim, Jung Chak Ahn, Hyuk Soon Choi, Kyung Ho Lee, Jun Suk Lee, Young Woo Jung
  • Image sensor and pixel of the image sensor
    Patent number: 9960201
    Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: May 1, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Ho Lee, Seung Joo Nah, Young Sun Oh, Dong Young Jang
  • TABLET SUPPLY APPARATUS
    Publication number: 20180105369
    Abstract: A tablet supply apparatus includes: a base frame a rotary plate rotatably installed on the base frame to outwardly position a tablet by centrifugal force, and inclinedly positioned to have a top dead center point and a bottom dead center point; a transfer plate positioned to surround the rotary plate, rotated with the rotary plate, and having an inclined surface outwardly and downwardly inclined on the same level as that of the top dead center point of the rotary plate, in order to receive the tablet from the top dead center point of the rotary plate; and a guide unit disposed on the outer peripheral surface of the transfer plate, the guide unit allowing the tablet, positioned and transferred on the inclined surface of the transfer plate, to be discharged toward the rotary plate of the inspection unit by centrifugal force and a sliding movement.
    Type: Application
    Filed: April 14, 2016
    Publication date: April 19, 2018
    Inventors: Kyung-Ho LEE, Byung-In KIM
  • TABLET TRANSFER APPARATUS
    Publication number: 20180100813
    Abstract: A tablet transfer apparatus includes a fixed plate provided with a rotary shaft penetrating therethrough, a negative pressure space formed therein to allow negative pressure to be partially applied to the negative pressure space, and a suction hole communicating at least with the negative pressure space; and a rotary plate combined with the rotary shaft to rotate, and provided with a concave groove formed in a circumferential surface of the rotary plate to communicate with the negative pressure space.
    Type: Application
    Filed: April 14, 2016
    Publication date: April 12, 2018
    Applicant: ENCLONY INC
    Inventors: Kyung-Ho LEE, Byung-In KIM
  • IMAGE SENSOR
    Publication number: 20180102389
    Abstract: An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.
    Type: Application
    Filed: August 8, 2017
    Publication date: April 12, 2018
    Inventor: Kyung-Ho LEE
  • METHOD OF FABRICATING DMOS AND CMOS TRANSISTORS
    Publication number: 20180096897
    Abstract: A method of fabricating a semiconductor device including a diffused metal-oxide-semiconductor (DMOS) transistor, an n-type metal-oxide-semiconductor (NMOS) transistor, and a p-type metal-oxide-semiconductor (PMOS) transistor includes forming separation regions in a semiconductor substrate, forming a gate insulating film, forming a DMOS gate electrode on the gate insulating film, forming a first mask pattern on the semiconductor substrate, performing a first ion implantation process, forming a second mask pattern on the semiconductor substrate, performing a second ion implantation process, forming a third mask pattern on the semiconductor substrate and performing a third ion implantation process into the semiconductor substrate, and forming a fourth mask pattern on the semiconductor substrate and performing a fourth ion implantation process.
    Type: Application
    Filed: December 5, 2017
    Publication date: April 5, 2018
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Hyun Kwang Shin, Jung Lee, Kyung Ho Lee
  • FAN-OUT SEMICONDUCTOR PACKAGE
    Publication number: 20180090458
    Abstract: A fan-out semiconductor package includes a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, an encapsulant sealing at least a portion of the inactive surface, a first connection member disposed on the active surface and including a redistribution layer and a first via electrically connecting the connection pad to the redistribution layer, a passivation layer disposed on the first connection member, and an under-bump metal layer including an external connection pad disposed on the passivation layer and a second via connecting the external connection pad to the redistribution layer. In a vertical direction, the first and second vias are disposed within the external connection pad and do not overlap each other.
    Type: Application
    Filed: January 10, 2017
    Publication date: March 29, 2018
    Inventors: Han KIM, Kyung Moon JUNG, Seok Hwan KIM, Kyung Ho LEE, Kang Heon HUR
  • IMAGE SENSOR AND DRIVING METHOD THEREOF
    Publication number: 20180063456
    Abstract: An image sensor according to some example embodiments includes a pixel array unit including a plurality of transmission signal lines and a plurality of output signal lines, and a plurality of pixels connected to the plurality of transmission signal lines and the plurality of output signal lines. Each of the plurality of pixels includes a plurality of photoelectric conversion elements, which are configured to detect and photoelectrically convert incident light. The plurality of pixels include at least one autofocusing pixel and at least one normal pixel.
    Type: Application
    Filed: March 17, 2017
    Publication date: March 1, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Kyung Ho LEE
  • Semiconductor device and fabrication method thereof
    Patent number: 9899226
    Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: February 20, 2018
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Ho Kyun Ahn, Hae Cheon Kim, Jong Won Lim, Dong Min Kang, Yong Hwan Kwon, Seong Il Kim, Zin Sig Kim, Eun Soo Nam, Byoung Gue Min, Hyung Sup Yoon, Kyung Ho Lee, Jong Min Lee, Kyu Jun Cho
  • Pixels of image sensors, image sensors including the pixels, and image processing systems including the image sensors
    Patent number: 9887217
    Abstract: Pixels of image sensors are provided. The pixels may include a photo diode configured to accumulate photocharges generated therein corresponding to incident light during a first period, a storage diode configured to store photocharges accumulated in the photo diode and a storage gate configured to control transfer of the photocharges accumulated in the photo diode to the storage diode. The storage gate may include a vertical gate structure extending toward the photo diode.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: February 6, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Chak Ahn, Seung Joo Nah, Kyung Ho Lee, Young Woo Jung
  • Method of fabricating DMOS and CMOS transistors
    Patent number: 9859168
    Abstract: A method of fabricating a semiconductor device including a diffused metal-oxide-semiconductor (DMOS) transistor, an n-type metal-oxide-semiconductor (NMOS) transistor, and a p-type metal-oxide-semiconductor (PMOS) transistor includes forming separation regions in a semiconductor substrate, forming a gate insulating film, forming a DMOS gate electrode on the gate insulating film, forming a first mask pattern on the semiconductor substrate, performing a first ion implantation process, forming a second mask pattern on the semiconductor substrate, performing a second ion implantation process, forming a third mask pattern on the semiconductor substrate and performing a third ion implantation process into the semiconductor substrate, and forming a fourth mask pattern on the semiconductor substrate and performing a fourth ion implantation process.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: January 2, 2018
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Hyun Kwang Shin, Jung Lee, Kyung Ho Lee
  • Image pixel including a plurality of trenches, image sensor including the same, and image processing system including the same
    Patent number: 9818781
    Abstract: An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: November 14, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Ho Lee, Jung Chak Ahn, Hyuk Soon Choi
  • CMOS image sensors including vertical transistor
    Patent number: 9806113
    Abstract: Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 31, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Sun Oh, Kyung-Ho Lee, Jung-Chak Ahn, Hee-Geun Jeong
  • SEMICONDUCTOR IMAGE SENSORS HAVING CHANNEL STOP REGIONS AND METHODS OF FABRICATING THE SAME
    Publication number: 20170287969
    Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.
    Type: Application
    Filed: June 15, 2017
    Publication date: October 5, 2017
    Inventors: SEUNGJOO NAH, JUNG-CHAK AHN, KYUNG-HO LEE
  • Unit pixel of image sensor, image sensor, and computing system having the same
    Patent number: 9762821
    Abstract: A unit pixel of an image sensor includes a charge generation unit, a signal generation unit, and a ground control transistor. The charge generation unit generates photo-charges in response to incident light and provides the photo-charges to a floating diffusion area in response to a transmission control signal. The signal generation unit generates an analog signal having a magnitude corresponding to an electrical potential of the floating diffusion area based on a reset control signal and a row selection signal. The ground control transistor is coupled between the floating diffusion area and a ground voltage, and is turned on in response to a ground control signal.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: September 12, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-Ho Lee, Hee-Sang Kwon
  • Pixel, image sensor including the same, and portable electronic device including the image sensor
    Patent number: 9748299
    Abstract: A pixel for a backside illuminated (BSI) image sensor includes a semiconductor substrate having a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface to generate charges in response to light received through the second surface, first trench-type isolation region surrounding the photoelectric conversion region and extending vertically from the second surface, a floating diffusion region in the semiconductor substrate below the photoelectric conversion region, and a transfer gate extending vertically from the first surface towards the photoelectric conversion region to transfer the charges from the photoelectric conversion region to the floating diffusion region. The first trench-type isolation region is formed of a negative charge material.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: August 29, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Chak Ahn, Kyung Ho Lee, Young Woo Jung, Seung Joo Nah, Hae Yong Park
  • One time programmable non-volatile memory device
    Patent number: 9735288
    Abstract: A one-time programmable non-volatile memory device includes a first conductivity type well region located in a semiconductor substrate, a selection gate electrode and a floating gate electrode located on the substrate, a first doped region located between the selection gate electrode and the floating gate electrode, a second conductivity type source region located on one side of the selection gate electrode, and a second conductivity type drain region located on one side of the floating gate electrode, wherein a depth of the drain region has a depth shallower than that of the first doped region with respect to a top surface of the substrate.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: August 15, 2017
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Tae Ho Kim, Kyung Ho Lee, Young Chul Seo, Sung Jin Choi