Abstract: An internal voltage generator for a semiconductor memory apparatus, including: a reference voltage generator that outputs a reference voltage. A driver controller receives the reference voltage and generating a driver control signal using the reference voltage. An amplifier circuit amplifies the driver control signal. And, a driver outputs an internal voltage in response to an output signal of the amplifier.

Abstract: The present invention proposes a multi-port memory device for preventing a degradation of a global data drive efficiency by turning off the switches which do not discharge a global data bus. The multi-port memory device includes a global data bus containing a plurality of bus lines; a plurality of banks including a transmitter and a receiver for exchanging a data with the global data bus; a plurality of ports including the transmitter and the receiver; a plurality of switches for selectively connecting the transmitter and the receiver with the global data bus; and a switching controller for generating a switch signal in response to a drive pulse and a data signal inputted to the transmitter, wherein the switch signal turns off the switches corresponding to the banks which are not discharging the global data bus.

Abstract: A multi-port memory device that prevents degradation of efficiency of a global data drive by turning off the switches, which do not discharge a global data bus. The multi-port memory device includes a global data bus, a banks, each bank including a transmitter and a receiver; ports, each port including a transmitter and a receiver; switches that operate to selectively connect the receivers of the banks and ports to the global data bus; and a switch signal generator for generating a switch signal in response to data drive pulses inputted to the transmitters of the banks and the ports.

Abstract: A multi-port memory device improves efficiency of a global data drive by controlling the global data bus to transmit data in a predetermined range. The multi-port memory device includes a global data bus; transmitters and receivers; a termination unit for controlling the global data bus to transmit the data in a range between a first voltage and a second voltage in response to an active mode signal; and a voltage generator for generating the first and the second voltages. The first voltage is higher than a ground voltage and the second voltage is lower than a power supply voltage.

Abstract: The present invention provides an internal voltage generator for maintaining a voltage level of an internal voltage by forcibly discharging an over-supplied voltage. The internal voltage generator includes a reference voltage generator for outputting at least one reference voltage with a predetermined voltage level after receiving an external voltage; a level shifter for outputting an internal reference voltage with a shifted voltage level by receiving the reference voltage of the reference voltage generator; a driver for outputting an internal voltage by using the internal reference voltage; and a discharging unit for forcibly discharging an over-supplied voltage of the internal voltage by a release pulse signal.

Abstract: A high voltage generator includes: a high voltage detecting unit for detecting a level of a high voltage and outputting a high enable signal; an auto refresh control unit for enabling an auto refresh high enable signal in response to a detection signal enabled when a level of a power supplying voltage is lower than a certain level and in response to the pumping enable signal during an auto refresh operation; and a high voltage generating unit for generating a high voltage by performing a pumping operation in response to the auto refresh pumping enable signal.

Abstract: Provided are a core voltage generator and a method for generating a core voltage in a semiconductor memory device. The core voltage generator includes a first discharge driver for discharging a core voltage terminal for an interval at which the voltage is higher than a target level, in response to a first enable signal activated for a first predetermined period after overdriving a bit line, and a second discharge driver for discharging the core voltage terminal for an interval at which the voltage at the core voltage terminal is higher than the target level by a predetermined threshold, in response to a second enable signal activated for a second predetermined period after overdriving the bit line, wherein the second predetermined period is shorter than the first predetermined period.

Abstract: The internal voltage generator of a semiconductor integrated circuit includes at least one variable reference voltage generating unit that generates a base reference voltage increased or decreased according to the variation in temperature, at least one level shifting unit that transforms the base reference voltage outputted by the at least one variable reference voltage generating unit into at least one prescribed reference voltage for generating internal voltage and outputs the transformed reference voltage, and at least one internal voltage generating unit that generates an internal voltage by using the at least one reference voltage for generating internal voltage outputted by the at least one level shifting unit.

Abstract: An oscillator operates with a variable driving voltage to produce an oscillation signal of a predetermined period in a semiconductor device. The oscillator has a plurality of logic devices connected to each other in a form of a ring. The oscillator includes a voltage generating circuit for generating first and second driving voltages which are selectively applied to the logic devices. The selective application of the first or second driving voltage to the logic devices affects the period of the oscillation signal produced. The first driving voltage is applied to the logic devices for normal operations when the oscillation signal period is tested to substantially equal the predetermined period. The second driving voltage is applied to the logic devices for normal operations when the oscillation signal period is tested to be different from the predetermined period. The second driving voltage is adjusted by changing the resistance ratio of at least two resistors in the circuit.

Abstract: A multi-port memory device improves efficiency of a global data drive by controlling the global data bus to transmit data in a predetermined range. The multi-port memory device includes a global data bus; transmitters and receivers; a termination unit for controlling the global data bus to transmit the data in a range between a first voltage and a second voltage in response to an active mode signal; and a voltage generator for generating the first and the second voltages. The first voltage is higher than a ground voltage and the second voltage is lower than a power supply voltage.

Abstract: The present invention proposes a multi-port memory device for preventing a degradation of a global data drive efficiency by turning off the switches which do not discharge a global data bus. The multi-port memory device includes a global data bus containing a plurality of bus lines; a plurality of banks including a transmitter and a receiver for exchanging a data with the global data bus; a plurality of ports including the transmitter and the receiver; a plurality of switches for selectively connecting the transmitter and the receiver with the global data bus; and a switching controller for generating a switch signal in response to a drive pulse and a data signal inputted to the transmitter, wherein the switch signal turns off the switches corresponding to the banks which are not discharging the global data bus.

Abstract: A multi-port memory device capable of preventing the first high data failure at an initial data transmission on a global data bus line according to the present invention includes: a global data bus line including a plurality of bus lines; a plurality of data transmitting and receiving unit including transmitters/receivers, which use a current sensing, for exchanging data into the global data bus line, wherein the receiver in the data transmitting and receiving unit includes resistors for dividing a voltage level; and a variable reference voltage generator for generating reference voltage levels as a receiver reference voltage, by controlling the resistance of the resistors in the receiver, wherein the variable reference voltage generator generates a first reference voltage level in an active mode and generates a second reference voltage level in a standby mode and wherein the first reference voltage level is higher than the second reference voltage level.

Abstract: The present invention provides an internal voltage generator for maintaining a voltage level of an internal voltage by forcibly discharging an over-supplied voltage. The internal voltage generator includes a reference voltage generator for outputting at least one reference voltage with a predetermined voltage level after receiving an external voltage; a level shifter for outputting an internal reference voltage with a shifted voltage level by receiving the reference voltage of the reference voltage generator; a driver for outputting an internal voltage by using the internal reference voltage; and a discharging unit for forcibly discharging an over-supplied voltage of the internal voltage by a release pulse signal.

Abstract: A multi-port memory device can avoid failure of the first high data during initial operation so that reliability and operation characteristic of the memory device can be improved. The multi-port memory device comprises a global data bus having a multiplicity of bus lines, a plurality of banks having a current sensing type transceiving structure for exchanging data with the global data bus, one or more ports having a current sensing type transceiving structure for exchanging data with the global data bus, a plurality of switches, each arranged between the corresponding bank and the bus lines of the global data bus for selectively connecting one of a redundant column and normal columns of the corresponding bank to the global data bus, and a controlling unit for restricting the turn-on period of the switches to the substantial operation period of the corresponding bank.

Abstract: A multi-loop oscillator which can control variation of an oscillating frequency of a ring oscillator according to variation of a supply voltage is disclosed comprising: first to Nth delay loops, wherein oscillation signal having a predetermined period is generated by selecting one of first to Nth delay loops according to potential variation of a supply voltage. Herein, the multi-loop oscillator further comprises a loop selection section for selecting one loop from among the first to the Nth delay loops, according to potential variation of the supply voltage. Further, the multi-loop oscillator further comprises a supply voltage detection circuit section for detecting variation of the supply voltage, and the supply voltage detection circuit section controls an operation of the loop selection section. In the multi-loop oscillator, an oscillation frequency of the ring oscillator can be adjusted.

Abstract: There is provided a multi-port memory device, which is capable of preventing a first high data fail phenomenon at an initial operation in a current sensing type global data bus transmission/reception structure without causing a problem in a low data transmission. In the multi-port memory device having a data transmission/reception block (bank, port, global data bus connection block, etc.) which exchanges data with the global data bus in a current sensing type data transmission/reception structure, an initialization switch is used to discharge each global data bus line and an initialization signal generator controls the initialization switch. A first high data fail at the initial operation is caused by a high precharge level of the global data bus. According to the present invention, it is possible to lower a high precharge level without causing a problem in data transmission.

Abstract: A multi-port memory device can avoid failure of the first high data during initial operation so that reliability and operation characteristic of the memory device can be improved. The multi-port memory device comprises a global data bus having a multiplicity of bus lines, a plurality of banks having a current sensing type transceiving structure for exchanging data with the global data bus, one or more ports having a current sensing type transceiving structure for exchanging data with the global data bus, a plurality of switches, each arranged between the corresponding bank and the bus lines of the global data bus for selectively connecting one of a redundant column and normal columns of the corresponding bank to the global data bus, and a controlling unit for restricting the turn-on period of the switches to the substantial operation period of the corresponding bank.

Abstract: A multi-port memory device capable of preventing the first high data failure at an initial data transmission on a global data bus line according to the present invention includes: a global data bus line including a plurality of bus lines; a plurality of data transmitting and receiving unit including transmitters/receivers, which use a current sensing, for exchanging data into the global data bus line, wherein the receiver in the data transmitting and receiving unit includes resistors for dividing a voltage level; and a variable reference voltage generator for generating reference voltage levels as a receiver reference voltage, by controlling the resistance of the resistors in the receiver, wherein the variable reference voltage generator generates a first reference voltage level in an active mode and generates a second reference voltage level in a standby mode and wherein the first reference voltage level is higher than the second reference voltage level.

Abstract: A power-up circuit comprises a first PMOS transistor connected between the power supply and a first node, wherein a gate terminal of the first PMOS transistor is connected to the ground, a first voltage divider for dividing the power upon a power up, a first NMOS transistor driven an output of the first voltage divider upon a power up and connected between the first node and the ground, an inverter having a plurality of PMOS transistors connected between the power supply and a second node, in which gate electrodes of the plurality of inverter are connected from each other and a second NMOS transistor connected between the second node and the ground and gate of the second NMOS transistor is connected to the plurality of the PMOS transistors, thereby inverting the potential of the first node, and a third NMOS transistor connected between the first node and the ground, wherein the third NMOS transistor is turned on by an output of the inverter, thereby preventing shifting faster than the potential of the first n

Abstract: A power-up circuit comprises a first PMOS transistor connected between the power supply and a first node, wherein a gate terminal of the first PMOS transistor is connected to the ground, a first voltage divider for dividing the power upon a power up, a first NMOS transistor driven an output of the first voltage divider upon a power up and connected between the first node and the ground, an inverter having a plurality of PMOS transistors connected between the power supply and a second node, in which gate electrodes of the plurality of inverter are connected from each other and a second NMOS transistor connected between the second node and the ground and gate of the second NMOS transistor is connected to the plurality of the PMOS transistors, thereby inverting the potential of the first node, and a third NMOS transistor connected between the first node and the ground, wherein the third NMOS transistor is turned on by an output of the inverter, thereby preventing shifting faster than the potential of the first n