Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack disposed on the substrate and including a plurality of interleaved conductive layers and dielectric layers, and a plurality of channel structures each extending vertically through the memory stack and having a plurality of protruding portions abutting the conductive layers and a plurality of normal portions abutting the dielectric layers. Each of the plurality of channel structures includes a blocking layer along a sidewall of the channel structure, and a storage layer over the blocking layer. The storage layer includes a plurality of charge trapping structures in the protruding portions of the channel structure, and a plurality of protecting structures in the normal portions of the channel structure and connecting the plurality of charge trapping structures.

Abstract: The present disclosure discloses a compiling system for a compiling system and a compiling method for a programmable network element.

Abstract: Memory device, memory system, and formation method are provided. The formation method includes providing a dielectric-pair stack containing a channel layer extending there-through, and forming a sacrificial layer in the dielectric-pair stack and in contact with the channel layer; forming a semiconductor layer over the dielectric-pair stack, the semiconductor layer containing a top selective gate (TSG) cut structure; forming a trench through the semiconductor layer to expose the sacrificial layer; forming a barrier layer on sidewalls of the semiconductor layer exposed by the trench; forming a recess by removing the sacrificial layer; and forming a channel plug structure in the trench and the recess.

Abstract: Memory device, memory system and formation method are provided. The method includes forming a sacrificial layer over a dielectric-pair stack, the sacrificial layer containing a top selective gate (TSG) cut structure over the dielectric-pair stack; forming a channel plug structure including a lower plug portion in the dielectric-pair stack and an upper plug portion through the sacrificial layer; forming a barrier layer at least enveloping the upper plug portion of the channel plug structure after a removal of the sacrificial layer; and forming a semiconductor layer over the dielectric-pair stack to embed the TSG cut structure, the barrier layer, and the upper plug portion of the channel plug structure.

Abstract: A semiconductor device includes N number of decks. Each deck includes alternating word line layers and insulating layers. Each deck includes two first gate line slit (GLS) structures and a second GLS structure positioned between the two first GLS structures. The two first GLS structures and the second GLS structures each extend in an X-Z plane and cut through the word line layers and the insulating layers of the respective deck. At least one second GLS structure of at least one deck in the N umber of decks includes multiple sub-GLS structures. The multiple sub-GLS structures are separate from each other.

Abstract: A semiconductor device includes decks stacked over a semiconductor layer in a vertical direction. Each deck includes alternating word line layers and insulating layers. A gate line structure (GLS) extends through the word line layers and the insulating layers of the decks. A channel structure extends through the word line layers and the insulating layers of the decks. A sidewall of the GLS is discontinuous at a border between two neighboring decks, and a sidewall of the channel structure is discontinuous at an interface between two neighboring decks. The GLS includes a first GLS that includes a gate line slit, a second GLS that includes sub-GLSs spaced apart from each other in a horizontal direction, or a combination thereof.

Abstract: A method for forming a three-dimensional (3D) memory device is disclosed. A stack is formed. The stack includes a first region and a second region disposed on a side of the first region along a first direction. The stack includes a first stack in the first region and a second stack in the second region. An interlayer dielectric (ILD) layer is formed over the second stack. Capacitors including first contacts each extending through the ILD layer and disposed on a first side of the second stack along a second direction are formed. The second direction is perpendicular to the first direction.

Abstract: A semiconductor device includes Number of decks that are stacked up in a Z direction and extend in parallel with an X-Y plane. N is an integer greater than 1. Each deck includes alternating word line layers and insulating layers. The N number of decks includes a first deck and a second deck adjacent to the first deck. A multi-deck gate line slit (GLS) structure extends in an X-Z plane and cuts through the word line layers and the insulating layers of the N number of decks. The multi-deck GLS structure has a first sidewall in the first deck, a second sidewall in the second deck, and a third sidewall at a border between the first deck and the second deck. The third sidewall connects the first sidewall and the second sidewall.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure including alternating first dielectric layers and first conductive layers, an array common source (ACS) film over the first semiconductor structure, a second semiconductor structure over the ACS film, and a channel structure extending in the first semiconductor structure, the ACS film, and the second semiconductor structure in a first direction. The second semiconductor structure includes alternating second dielectric layers and second conductive layers. The channel structure is electrically connected to the ACS film.

Abstract: Provided is a network modal management system and a management method. The system includes a polymorphic intelligent network integrated development environment and a polymorphic intelligent network distributed compilation and deployment environment. The polymorphic intelligent network integrated development environment provides users with an environment for writing code and configuration files, and facilitates users to debug the code. The polymorphic intelligent network distributed compilation and deployment environment provides users with a management interface and services, and integrates various functions related to network modal. The network modal management system significantly improves the management efficiency of polymorphic intelligent network platforms.

Abstract: A semiconductor structure includes a stack structure, first gate isolation structures, and conductive structures. The stack structure includes gate layers and first dielectric layers disposed alternately. The first gate isolation structures extend along a first direction, and the first gate isolation structures are arranged at intervals along a second direction and divide the stack structure into at least one block comprising a memory region and a connection region that are distributed along the first direction. The conductive structures are located in the connection region, and orthographic projections of upper ends of at least two conductive structures on a reference plane at least partially overlap. The reference plane is perpendicular to the second direction, and the first direction is perpendicular to the second direction.

Abstract: 3D memory devices are disclosed. In an implementation, a 3D memory device includes a stack structure having a core area and a staircase area. The core area includes conductive layers interleaved with first dielectric layers. Each stair of the staircase area has a different number of conductive layers interleaved with a different number of first dielectric layers. The staircase area has contact structures that penetrate through the first surface, a respective one of the stairs, and dielectric material. Each of the contact structures is electrically connected to a contacting conductive layer of the different number of conductive layers of one of the stairs. The staircase area has second dielectric layers, each of which isolates a remainder of the different number of conductive layers of the respective one of the stairs other than the contacting conductive layer from a respective contact structure.

Abstract: A semiconductor device and a manufacturing method thereof, a memory and a memory system are disclosed. The method includes: providing a substrate and stacked layers on the substrate, the stacked layers comprising interlayer sacrificial layers and interlayer insulating layers which are alternately stacked; removing part of the interlayer sacrificial layer to form a gate gap; sequentially forming a protection layer and a gate structure in the gate gap; forming a contact hole extending from a side of the stacked layers facing away from the substrate into a remaining interlayer sacrificial layer and exposing the protection layer; removing the protection layer exposed in the contact hole to expose the gate structure; forming a contact structure in the contact hole in such a way that the contact structure is connected with the gate structure.

Abstract: A semiconductor device includes a base and a stack structure. The base includes a first surface defining at least one memory plane region. The stack structure is disposed on the first surface, and includes a first portion located at the edge of the memory plane region and a second portion different from the first portion. The first portion includes first contact structures penetrating through the stack structure in a first direction and extending to the base. The second portion includes second contact structures electrically connected with corresponding gate conductor layers in the stack structure. A top surface of the first contact structure away from the base is flush with a top surface of the second contact structure away from the base.

Abstract: Semiconductor components, fabrication methods thereof and memory systems. A fabrication method includes performing trap repairing on a first wafer at a first temperature, the first wafer including memory cells; bonding the first wafer with a second wafer to form a semiconductor component, the second wafer including a device layer; and repairing the semiconductor component at a second temperature lower than the first temperature.

Abstract: The present disclosure provides a memory device having a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first set of peripheral circuits having a first transistor configured to operate with a first voltage, and a second set of peripheral circuits having a second transistor configured to operate with a second voltage lower than the first voltage. The second set of peripheral circuits are disposed over the first set of peripheral circuits. The second semiconductor structure includes memory cells coupled to the first semiconductor structure.

Abstract: A detection method and a device based on a laser radar, and a computer readable storage medium are disclosed. The detection method includes: obtaining scanning data of the laser radar; performing an algorithm splitting on a feature algorithm for detection based on the scanning data to obtain at least one sub-algorithm capable of parallel processing in the feature algorithm; and performing a heterogeneous acceleration for the at least one sub-algorithm to process the scanning data and to obtain a processing result; and obtaining a detected position of an obstacle and a detected drivable area based on the processing result.

Abstract: A method includes forming a stack of alternating insulating layers and sacrificial layers over a substrate; forming a trench through the stack to uncover the substrate to expose lateral sides of the insulating layers and the sacrificial layers, the trench extending from a core area to a stair step area of the stack; forming a liner to cover the exposed lateral sides; removing the liner in the trenches within a first area of the core area and the stair step area to expose the lateral sides of the sacrificial layers of the stack within the first area; removing the sacrificial layers within the first area; removing the liner in the trenches within a second area of the core area and the stair step area to expose the lateral sides of the sacrificial layers of the stack within the second area; and removing the sacrificial layers within the second area.

Abstract: Three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. In certain aspects, a disclosed 3D memory device comprises a first semiconductor structure including a core region, a spacer region, and a periphery region, and a second semiconductor structure including a second periphery circuit on a substrate. The first semiconductor structure comprises a memory stack on a semiconductor layer in the core region, a first periphery circuit on the semiconductor layer in the periphery region, and a spacer structure in the spacer region to separate the memory stack and the first periphery circuit. The second semiconductor structure is connected to the first semiconductor structure.

Abstract: A software and hardware collaborative compilation processing method and system. The system comprises an environment configurator, a command parser, a code filler, a scheduler and a heterogeneous target system, wherein the code filler is configured for obtaining the source program path of a user, reading source codes and identifying the heterogeneous target system according to a macro definition, complementing the codes related to the heterogeneous target system, carrying out primary filling and secondary filling on the source codes; the scheduler is configured for realizing compilation scheduling and execution scheduling functions respectively; the heterogeneous target system is configured for compiling and processing user modal data, and comprises at least two heterogeneous target subsystems; each target subsystem comprises a target-related middle-end compiler, a back-end compiler and a target-related running environment.