Abstract: A method of forming a three-dimensional (3D) NAND memory device includes: forming a gate line slit through alternating layers of an oxide layer and a conductive material layer, wherein the conductive material layer is further formed on a sidewall and a bottom of the gate line slit; performing a first etch process to remove portions of the conductive material layer from the sidewall and the bottom of the gate line slit and from between adjacent oxide layers, thereby exposing portions of the oxide layer in the gate line slit; removing the exposed portions of the oxide layer on the sidewall of the gate line slit; and performing a second etch process to remove residues of the conductive material layer in the gate line slit.

Abstract: Embodiments of semiconductor devices and methods for forming the same are disclosed. In an example, a semiconductor device includes at least one dielectric layer pair including a first dielectric layer and a second dielectric layer different from the first dielectric layer, an interlayer dielectric (ILD) layer in contact with the at least one dielectric layer pair, and one or more capacitors each extending vertically through the ILD layer and in contact with the at least one dielectric layer pair.

Abstract: A three-dimensional (3D) memory device includes a memory stack including conductive layers and dielectric layers interleaving the conductive layers, and a channel structure extending through the memory stack along a vertical direction. The channel structure has a plurality of protruding portions protruding along a lateral direction and facing the conductive layers, respectively, and a plurality of normal portions facing the dielectric layers, respectively, without protruding along the lateral direction. The channel structure includes a plurality of blocking structures in the protruding portions, respectively, and a plurality of storage structures in the protruding portions and over the plurality of blocking structures, respectively. A vertical dimension of each of the blocking structures is nominally the same as a vertical dimension of a respective one of the storage structures over the blocking structure.

Abstract: A first opening extending vertically through a dielectric stack is formed above a substrate. The dielectric stack includes vertically interleaved dielectric layers and sacrificial layers. Parts of the sacrificial layers facing the opening are removed to form a plurality of first recesses. A plurality of stop structures are formed along sidewalls of the plurality of first recesses. A plurality of storage structures are formed over the plurality of stop structures in the plurality of first recesses. The plurality of sacrificial layers are removed to expose the plurality of stop structures from a plurality of second recesses opposing the plurality of first recesses. The plurality of stop structures are removed to expose the plurality of storage structures. A plurality of blocking structures are formed over the plurality of storage structures in the plurality of second recesses.

Abstract: The present disclosure discloses a compiling system for a compiling system and a compiling method for a programmable network element.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers, a landing structure and a contact structure. The gate layers and the insulating layers are stacked alternatingly, and form stair steps in a staircase region. The landing structure is disposed on a first gate layer of a first stair step of the stair steps in the staircase region. The landing structure includes an upper structure and an isolation stack between the upper structure and the first gate layer. The upper structure is etch-selective to a contact isolation layer that covers the staircase region. The contact structure extends through the contact isolation layer and the landing structure and is connected with the first gate layer of the first stair step.

Abstract: A network modal management system and a management method. The system comprises a polymorphic intelligent network integrated development environment and a polymorphic intelligent network distributed compilation and deployment environment; the polymorphic intelligent network integrated development environment further comprises a network modal deployment file packaging tool, which is used for packaging a network modal source code file and a corresponding configuration file into a network modal deployment file; the polymorphic intelligent network distributed compilation and deployment environment comprises a polymorphic intelligent network modal package manager deployed on a controller server and a network node equipment network modal package manager deployed on a network node equipment.

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A channel hole extending vertically above a substrate and having a plum blossom shape in a plan view is formed. A continuous blocking layer, a continuous charge trapping layer, and a continuous tunneling layer each following the plum blossom shape are formed from outside to inside in this order along sidewalls of the channel hole. A plurality of separate semiconductor channels each disposed over part of the continuous tunneling layer at a respective apex of the plum blossom shape are formed.

Abstract: A method of forming a three-dimensional (3D) NAND memory device includes: forming a gate line slit through a plurality of alternating layers of an oxide layer and a conductive material layer, where the conductive material layer is further formed on a sidewall and a bottom of the gate line slit; performing an ion implantation process to dope at least a portion of the conductive material layer that is on the bottom and/or a portion of the sidewall of the gate line slit; and performing an etch process in the gate line slit to remove the conductive material layer that is weakened by the ion implantation process.

Abstract: A system and a method of black start for a combined operation of wind power, photovoltaic power, energy storage, and thermal power includes a renewable energy alternating current microgrid module, a power transmission and distribution module, and a thermal power generation module, the power transmission and distribution module is coupled to the renewable energy alternating current microgrid module and the thermal power generation module respectively. The renewable energy alternating current microgrid module includes a photovoltaic unit, a wind power unit, and an energy storage unit. The power transmission and distribution module is configured to transmit the electrical energy generated by the renewable energy alternating current microgrid module to the thermal power generation module. The thermal power generation module is configured to start an auxiliary equipment using the electrical energy transmitted by the power transmission and distribution module.

Abstract: Disclosed is a rock similar material satisfying a water-induced strength degradation characteristic and a preparation method and use thereof. The rock similar material satisfying the water-induced strength degradation characteristic includes an aggregate, a cementing material, and an additive, where the aggregate includes quartz sand, barite powder, and bentonite, and the cementing material includes cement and gypsum.

Abstract: The system for frequency modulation based on Direct Current (DC) controllable load for a high-voltage plant includes a frequency modulator and a DC-controllable load for the high-voltage plant connected to the frequency modulator. The frequency modulator includes a centralized rectifier configured to adjust power of loads in the DC-controllable load in response to a frequency modulation command. The DC-controllable load is configured to respond to an adjustment of the power of loads performed by the centralized rectifier.

Abstract: The disclosure relates to the technical field of air conditioning of vehicles, and in particular provides a vehicle and an air conditioning system thereof. The air conditioning system comprises: an air handling unit having a chamber, the air handling unit being capable of regulating the temperature of air entering the chamber; and an air duct group comprising an air supply duct in communication with an in-cabin space of the vehicle, the air supply duct comprising at least a back-row air duct that releases air to a back-row space in the in-cabin space. The air conditioning system further comprises a bypass air duct, at least part of which does not have an intersecting portion with the air handling unit so as to reduce, at least in part, the resistance due to air having to flow through the air handling unit on the premise of allowing the air to enter the back-row space via the bypass air duct.

Abstract: A method for forming a 3D memory device is provided. The method comprises forming a sacrificial layer on a substrate, forming an alternating dielectric stack on the sacrificial layer, forming a plurality of channel holes vertically penetrating the alternating dielectric stack and the sacrificial layer, and forming a first channel layer in each channel hole. The method further comprises forming a second channel layer on the first channel layer in each channel hole, such that a merging point of the second channel layer is higher than a bottom surface of the alternating dielectric stack. The method further comprises removing the sacrificial layer to form a horizontal trench, and forming a selective epitaxial growth layer in the horizontal trench.

Abstract: A semiconductor device is provided. The semiconductor device includes word line layers and insulating layers that are alternatingly stacked along a vertical direction perpendicular to a substrate of the semiconductor device. The semiconductor device includes a channel structure that extends along the vertical direction through the word line layers and the insulating layers. A cross-section of the channel structure that is perpendicular to the vertical axis includes channel layer sections that are spaced apart from one another.

Abstract: A software and hardware collaborative compilation processing method and system. The system comprises an environment configurator, a command parser, a code filler, a scheduler and a heterogeneous target system, wherein the code filler is configured for obtaining the source program path of a user, reading source codes and identifying the heterogeneous target system according to a macro definition, complementing the codes related to the heterogeneous target system, carrying out primary filling and secondary filling on the source codes; the scheduler is configured for realizing compilation scheduling and execution scheduling functions respectively; the heterogeneous target system is configured for compiling and processing user modal data, and comprises at least two heterogeneous target subsystems; each target subsystem comprises a target-related middle-end compiler, a back-end compiler and a target-related running environment.

Abstract: A seamless leg rest device for automobile seats comprises a middle fixing bracket, side fixing brackets, link assemblies, a rotary driving assembly, a support plate and a telescopic assembly, wherein a front side of the support plate is covered with a foamed cover assembly, a lower end of the foamed cover assembly stretches across the support plate and is then bent backwards, and a tail end of a bent section of the foamed cover assembly is tensioned on the link assemblies through a telescopic return member. Both the angle and the length of a leg rest can be adjusted, and seams are avoided when the leg rest is adjusted.

Abstract: The present disclosure relates to an exoskeleton robot for expectoration assistance and a control method. In the exoskeleton robot, a respiratory sensor acquires a respiratory signal of a user to be assisted; a positive pressure module covers an upper abdomen of the user to be assisted; a negative pressure module is arranged on an outer wall of a thoracic cavity of the user to be assisted and wraps the whole thoracic cavity, and a negative pressure cavity is formed between a housing of the negative pressure module and the outer wall of the thoracic cavity; in an inhalation state, the rigidity of the housing of the negative pressure module increases; in an exhalation state, the rigidity of the housing of the negative pressure module decreases; the control module is respectively connected with the respiratory sensor, the positive pressure module, and the negative pressure module.

Abstract: A three-dimensional memory includes a bottom select gate structure, a stack structure disposed on the bottom select gate structure, and a top select gate structure disposed on the stack structure. The stack structure includes a channel layer extending in stack structure in the first direction of the thickness of the stack structure. The channel layer has a first conductive type impurity. At least one of the bottom select gate structure or the top select gate structure includes a semiconductor structure extending in the first direction and connected with the channel layer and having a second conductive type impurity different from the first conductive type impurity.

Abstract: Disclosed are a rock similar material satisfying a water-induced strength degradation characteristic and a preparation method and use thereof. The rock similar material satisfying the water-induced strength degradation characteristic includes an aggregate, a cementing material, and an additive, where the aggregate includes quartz sand, barite powder, and bentonite, and the cementing material includes cement and gypsum.