Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

Abstract: A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing at least two toroidal windings in the wet chemical etchant to be proximate to but not in contact with the workpiece; and monitoring an electrical characteristic between said at least two toroidal windings, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base member; providing at least two sensors disposed on the base member to be proximate to but not in contact with the outer perimeter of the workpiece surface; and monitoring an electrical characteristic between said at least two sensors, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.

Abstract: A fixture for in-situ chemical etch monitoring of an etching process during etching of at least one wafer contained in a wafer carrier is disclosed. The fixture comprises a set of primary guide members for engaging and guiding a front portion of the wafer carrier. A set of rear guide members engages and guides a rear portion of the wafer carrier. A set of electrode arms is included for receiving a respective electrode and corresponding electrode wire thereon. A mounting plate establishes a prescribed spacing of the set of primary guide members with respect to the set of electrode arms. A means for self-locking the first wafer contained in the wafer boat is connected to the mounting plate and further positioned in a prescribed manner with respect to the set of primary guide members and the set of electrode arms.

Abstract: A contactless method and apparatus for in-situ chemical etch monitoring of an etching process during etching of a workpiece with a wet chemical etchant are disclosed. The method comprises steps of providing a base member having a reference surface; releasably securing the workpiece to the base member; providing at least two sensors disposed on the base member to be proximate to but not in contact with the outer perimeter of the workpiece surface; and monitoring an electrical characteristic between said at least two sensors, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.

Abstract: Compounds having the formula ##STR1## wherein --OR.sup.1 comprises alkanoyl or the C-13 side-chain of taxol; R.sup.2, R.sup.3, and R.sup.6 can be oxygenated or hydrogen in various combinations; and R.sup.4 and R.sup.5 are acyl groups,as well as a process for the preparation thereof, pharmaceutical compositions containing the above compounds, and a method for their use in inhibiting tumor growth.

Abstract: A method and apparatus for detecting an etching endpoint of a film on a substrate whereby a first excitation beam of light having a prescribed wavelength is provided, the first light beam substantially containing only a first harmonic component of light at that wavelength. The first light beam is directed at a prescribed incident angle to an interface between the film and the substrate, the first light beam being reflected off the interface to thereby provide a second light beam, the second light beam containing the first harmonic component of the first light beam and a generated second harmonic component. The generated second harmonic component is detected and a first output signal representative thereof is provided. A generated second harmonic component reference of the first light beam is produced and a second output signal representative of a generated second harmonic component reference is provided.

Abstract: A non-intrusive, in-situ monitoring technique and apparatus is used for evaluating the presence and extent of a critical contaminating or passivating layer on a transparent sample, prior to a subsequent process step. A multiple internal reflection apparatus and method without the need for aligning mirrors reduces the time to maximize the light intensity through the sample and to the detector and eliminates the intensity loss due to reflection from each mirror. The technique and apparatus can be used to monitor for a critical hydrogen passivation layer so that it is maintained on the silicon surface right up to the point at which the reactants are introduced for the deposition. The in-situ monitoring and process control technique uses Fourier Transform Infrared Spectroscopy with Multiple Internal Reflections (FTIRS-MIR) which looks at the Si--H bond vibration. Apparatus implementing the technique provides a means of insuring reproducibility in films through direct monitoring of the passivating layer.

Abstract: A method and apparatus for measuring with monolayer sensitivity in real-time the condition of a sample, includes a device for producing a modulated and collimated, p-polarized excitation light beam, a device for directing the p-polarized beam to a surface of the sample such that an angle of incidence of the p-polarized light beam with respect to the normal of the surface is at the Brewster angle, first and second reflecting devices between which the sample is positioned, a mechanism for adjusting a distance between the first and second reflecting devices to adjust a number of interactions of the p-polarized excitation light beam with the sample surfaces, and a detector for detecting the p-polarized light beam output intensity distribution with respect to frequency front the sample surfaces. The reflecting devices and the sample are adjustably maintained parallel to one another to thereby maintain the Brewster angle of the input excitation light beam with respect to the normal of the sample surface.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, said at least two electrodes being proximate to but not in contact with the at least one wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

Abstract: An interferometer 10 for measuring the position of the process surface 21 of a substrate 20 includes a coherent light source 12 for providing a light beam 14 which is partially transmitted and partially reflected by a beam splitter 16. The reflected light beam 18 is reflected off of the process surface 21 and the transmitted light beam 30 is reflected off of a translator 32 which vibrates a predetermined distance at a predetermined frequency. The phase shift between the light beams 22, 31 reflected off of translator 32 and the process surface 21 is measured using a photodetector 24, which provides an output signal 26 to a feedback servo unit 28. The servo unit 28 provides an output signal 38 which controls the vibration of translator 32. The output signal 38 of servo unit 28 is also indicative of the position of the process surface 21.