Abstract: Example embodiments relate generally to data resynchronization methods and systems in continuous data protection (CDP) and more specifically to an input and output (I/O) filtering framework and log management system to seek a near-zero recovery point objective (RPO).

Abstract: A method for intelligent fault detection and location of a power distribution network is provided, which includes: constructing a network topology of the power distribution network, updating the network topology in real time to obtain an updated network topology, performing a fault identification based on the updated network topology, performing a fault locating based on the updated network topology to determine a fault node, and identifying a fault type based on a fault recorded signal of the fault node. With this method, fault locations and fault types of the power distribution network can be accurately detected in real time.

Abstract: An embodiment of this application provides a data transmission method. The method includes: A first communication apparatus sends an ith AM group to a second communication apparatus, and sends first data of a plurality of service flows to the second communication apparatus based on a mapping relationship. The first data is carried in M time units between the ith AM group and an (i+1)th AM group, the mapping relationship is a mapping relationship between a slot of a first calendar and the plurality of service flows, and the first calendar includes s slots. The M time units between the ith AM group and the (i+1)th AM group include N first counting periods, each time unit of the first counting period corresponds to one slot of the first calendar, and different time units of a same first counting period correspond to different slots of the first calendar.

Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes: a substrate including a first doped region; a first isolation structure located in the first doped region, a depth of the first isolation structure being greater than that of the first doped region; a first gate structure located on the surface of the substrate of the first doped region and spanning the first isolation structure, a projection width of the first gate structure on the substrate being larger than that of the first isolation structure on the substrate; and second gate structures located on the surface of the substrate and at both sides of the first gate structure.

Abstract: A data management system comprises: a storage appliance configured to store a snapshot of a virtual machine; and one or more processors in communication with the storage appliance. The one or more processors are configured to perform operations including: identifying a plurality of shards of the virtual machine; requesting a snapshot of each of the plurality of shards; receiving the shards asynchronously; ordering the received snapshot shards sequentially into a results queue; and storing a single snapshot of the virtual machine based on the ordered snapshot shards. Operations may further include maintaining a flow control queue that limits the number of snapshot shards requested.

Abstract: An aqueous dispersion of a silicone pressure sensitive adhesive base can be combined with a curing agent and cured to form a silicone pressure sensitive adhesive.

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A bit block sending method includes generating at least one first bit block, where the at least one first bit block is used to feed back whether at least one first packet is correctly received, the at least one first bit block further includes a first sequence field, and the first sequence field is used to carry first sequence information of the at least one first packet, and sending the at least one first bit block.

Abstract: Example embodiments relate generally to systems and methods for continuous data protection (CDP) and more specifically to an input and output (I/O) filtering framework and log management system to seek a near-zero recovery point objective (RPO).

Abstract: An equivalent input characterization waveform (EICW) is determined for a channel-connected block (CCB) located on a boundary of a cell, for a specific waveform of interest. The EICW and the specific waveform of interest produce a same timing characteristic of the CCB, but the EICW belongs to a set of waveforms on which a behavioral timing model for the multi-stage cell is based whereas the specific waveform of interest is not so limited. A timing response of the multi-stage cell is then estimated based on applying the EICW.

Abstract: Example embodiments relate generally to systems and methods for continuous data protection (CDP) and more specifically to an input and output (I/O) filtering framework and log management system to seek a near-zero recovery point objective (RPO).

Abstract: An in-memory computing method is applied to the in-memory computing circuit. The in-memory computing circuit includes a plurality of first memory cells, a plurality of second memory cells, and a sense amplifier. Level state control is performed on the plurality of first memory cells according to first data to output a first voltage; level state control is performed on the plurality of second memory cells according to second data to output a second voltage; and after receiving a predetermined operation instruction, the sense amplifier receives the first voltage and the second voltage, compares the first voltage with the second voltage, and determines a comparison result of the first data and the second data according to a comparison result of the first voltage and the second voltage.

Abstract: Disclosed is a control method for an audio device, the audio device includes a playing component and a display screen rotatably connected to the playing component, and the control method for the audio device includes the following steps: in response to detecting rotation of the display screen, acquiring a first rotation direction and a first rotation angle of the display screen in a preset three-dimensional coordinate system; determining a second rotation direction and a second rotation angle of display content on the display screen according to the first rotation direction and the first rotation angle, where the first rotation direction is opposite to the second rotation direction, and a difference between the second rotation angle and the first rotation angle is less than or equal to a preset value; and adjusting a display orientation of the display content according to the second rotation direction and the second rotation angle.

Abstract: An in-place data recovery method and system include receiving a user request to restore a virtual machine to a version corresponding to a first point in time, identifying a first snapshot of the virtual machine based on the user request, generating a second snapshot of the virtual machine, identifying a second data block in the second snapshot that includes modified data derived from data content of a first data block in the first snapshot, generating reverse incremental backup data including the first data block, and restoring the virtual machine in-place based on the reverse incremental backup data.

Abstract: A method for preparing a curable silicone pressure sensitive adhesive emulsion includes preparing a dispersion of benzoyl peroxide and a phenoxy-functional alcohol and thereafter combining the dispersion with the other starting materials of the emulsion.

Abstract: Example embodiments relate generally to systems and methods for continuous data protection (CDP) and more specifically to an input and output (I/O) filtering framework and log management system to seek a near-zero recovery point objective (RPO).

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Abstract: A processing device determines cell boundary conditions for each of a plurality of boundaries of a cell in an integrated circuit layout and determines a layout dependent effect (LDE) impact for the cell based on the cell boundary conditions for each of the plurality of boundaries of the cell. The processing device further generates a prediction of an LDE impact on one or more contents of a library associated with the cell, and performs an LDE-aware timing analysis for the cell based on the prediction of the LDE impact on the one or more contents of the library.

Abstract: An HS-25 tablet, an HS-25 solid dispersion composition, a preparation method therefor and usage thereof. The HS-25 tablet is made by using HS-25 and excipients for wet granulation, drying, granulating and tablet pressing.