Abstract: A computer device and a host module thereof are provided. The host module includes a case, a motherboard, and a power supply unit. The case includes a first side plate, a second side plate, a front panel, a rear panel, and a separation structure. The rear panel is located on an opposite side of the front panel. The first side plate, the second side plate, the front panel, and the rear panel enclose an internal space. The separation structure is located in the internal space, extends from the first side plate to the second side plate, and divides the internal space into a first part and a second part. The second part is located under the first part. The motherboard is disposed in the first part. The power supply unit is disposed in the second part, and is electrically connected to the motherboard.

Abstract: A method and system for accelerating analysis of large-scale data that reads a data packet from a queue, and after performing data processing on the data packet, a first high, middle, and low byte of the processed data packet is cyclically read; a preset signal reference value is read, and the preset signal reference value is converted into a collected value according to a preset signal transformation ratio and a correction factor; the collected value is converted into an integer value, and the integer value is split into a second high, middle, and low byte; and the first high, middle, and low byte of the processed data packet is compared with the second high, middle and low byte of the integer value in a preset way. A determination as to whether the data of the packet is abnormal or not is made based on the result of the comparison.

Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.

Abstract: A device, apparatus, and method for semiconductor transfer are provided. A transfer substrate is controlled to be moved to be above the target substrate. An infrared emitting portion emits infrared signals to position a semiconductor on a target substrate. After a second magnetic portion picks up the semiconductor from the target substrate, a controller outputs a first control current to a first electromagnetic portion to cause the first electromagnetic portion to generate an electromagnetic force, to control the second magnetic portion to adjust a position of the picked-up semiconductor relative to the welding position on the target substrate, where adjusting the position of the picked up semiconductor includes horizontal adjustment.

Abstract: A method for manufacturing a semiconductor structure includes: forming a patterned structure which includes a first semiconductor portion and a second semiconductor portion, the first and second semiconductor portions having different materials; and performing an oxide formation process to oxidize the first and second semiconductor portions such that a first oxidation layer formed on the first semiconductor portion has a thickness less than that of a second oxidation layer formed on the second semiconductor portion.

Abstract: A connecting device for interconnecting a vertical tube and a plurality of display cabinets for carrying display modules includes first and second connecting frames and a fastening unit. The first connecting frame is for mounting the display cabinets thereon, abuts against a front outer surface of the vertical tube facing the display cabinets. The second connecting frame abuts against a rear outer surface of the vertical tube facing away from the first connecting frame. The fastening unit includes first fastening sets fastening the first and second connecting frames together so as to clamp the vertical tube therebetween. The second fastening sets fasten securely the display cabinets to the first connecting frame.

Abstract: An electronic device including a plurality of light-emitting units, a driving circuit, and a controlling circuit is provided. The driving circuit is configured to drive at least one of the light-emitting units. The controlling circuit is configured to control the driving circuit. The plurality of light-emitting units, the driving circuit, and the controlling circuit are respectively disposed on different substrate.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes an epitaxial structure and a metal silicide layer. The epitaxial structure includes a semiconductor material. The metal silicide layer is disposed on the epitaxial structure. The metal silicide layer includes the semiconductor material, a first metal material and a second metal material. An atomic size of the first metal material is greater than an atomic size of the second metal material, and a concentration of the first metal material in the metal silicide layer varies along a thickness direction.

Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.

Abstract: An evaluation method for corrosion damage evolution of underwater concrete structures includes performing the time reversal test on the concrete beam specimen placed in the water, performing the uniaxial compression test on the concrete cube specimens; immersing the concrete beam specimen and the concrete cube specimens in a hydrochloric acid solution, and performing the time reversal test on the concrete beam specimen on the 10th, 20th and 30th days respectively. At the same time, a concrete cube specimen is taken out to perform the uniaxial compression test on the 10th, 20th and 30th days respectively; and using the above calculation results to evaluate the corrosion evolution process thereof without damaging the underwater concrete structure.

Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.

Abstract: A semiconductor device includes a substrate, a semiconductor feature protruding from the substrate and extending lengthwise in a first direction, an epitaxial feature directly above the semiconductor feature, and a gate stack adjacent the epitaxial feature. The epitaxial feature comprises a lower portion and an upper portion over the lower portion. The upper portion extends partially through the lower portion in a cross section perpendicular to the first direction. A topmost surface of the upper portion is substantially flat.

Abstract: An integrated circuit structure includes a substrate, a conductive layer, a plurality of memory devices, a bonding pad, and a source line. The conductive layer is over the substrate. The memory devices are stacked in a vertical direction over the conductive layer. The bonding pad is over the conductive layer. The source line extends upwardly from the bonding pad and has a lower portion inlaid in the bonding pad and an upper portion having a sidewall coterminous with a sidewall of the bonding pad. A top end of the source line has a first lateral dimension greater than a second lateral dimension of the bonding pad.

Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.

Abstract: Methods and systems are presented for providing a framework to securely integrate third-party logic into electronic transaction processing workflow. Third-party programming code that implements different third-party logic may be obtained and stored in a repository. A transaction processing request is received from a third-party server, and an instance of a transaction processing module is instantiated within an operating runtime environment to process a transaction according to a workflow. When the instance of the transaction processing module has reached an interruption point, the instance of the transaction processing module is suspended, and a third-party programming code is executed within an isolated runtime environment. The third-party programming code is configured to provide an output value based on attributes of the transaction. The instance of the transaction processing module then determines whether to authorize or deny the transaction based in part on the output value.

Abstract: An electronic device of an embodiment of the disclosure includes a first substrate, a second substrate, and a driving layer. The first substrate and the second substrate are disposed opposite to each other, and the driving layer is disposed between the first substrate and the second substrate. The driving layer includes a scan line and a data line. The scan line is disposed on the first substrate and includes a first scan line segment. The first scan line segment has an opening and includes a first branch and a second branch. The first branch and the second branch are located on two opposite sides of the opening and are electrically connected in parallel with each other. The data line is disposed on the first substrate and intersects with the scan line. The electronic device of the embodiment of the disclosure may exhibit ideal display effect.

Abstract: One embodiment of the present invention sets forth an integrated circuit. The integrated circuit includes a plurality of subunits associated with a plurality of operating voltages. The integrated circuit also includes one or more voltage regulator circuits that convert a first input voltage into a first plurality of output voltages during a first test, wherein the plurality of output voltages is delivered to the plurality of subunits via a plurality of output channels.