Patents by Inventor Li-Yi Chen

Li-Yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9969078
    Abstract: A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: May 15, 2018
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventors: Li-Yi Chen, Pei-Yu Chang, Chih-Hui Chan, Chun-Yi Chang, Shih-Chyn Lin, Hsin-Wei Lee
  • Publication number: 20180076314
    Abstract: A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of semiconductor layers on the semiconductor substrate, each pair of semiconductor layers consists of a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type. The second semiconductor layer is stacked on and contacts the first semiconductor layer.
    Type: Application
    Filed: November 6, 2017
    Publication date: March 15, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Pin CHEN, Chi-Cherng JENG, Ru-Shang HSIAO, Li-Yi CHEN
  • Publication number: 20180053684
    Abstract: A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.
    Type: Application
    Filed: May 19, 2017
    Publication date: February 22, 2018
    Inventors: Shih-Chyn LIN, Li-Yi CHEN
  • Publication number: 20170358257
    Abstract: A pixel includes a first driving transistor, a first control circuit, a second driving transistor, and a second control circuit. The first driving transistor is configured to drive a first light emitting diode according to a first driving signal and a first supply voltage from a first voltage supply. The first control circuit is configured to generate the first driving signal according to a first data voltage and a scan signal. The second driving transistor is configured to drive a second light emitting diode according to a second driving signal and a second supply voltage from a second voltage supply. The second control circuit is configured to generate the second driving signal according to a second data and the scan signal. The first supply voltage and the second supply voltage are different from each other.
    Type: Application
    Filed: June 12, 2016
    Publication date: December 14, 2017
    Inventors: Shih-Chyn LIN, Li-Yi CHEN
  • Patent number: 9842782
    Abstract: A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: December 12, 2017
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventors: Li-Yi Chen, Pei-Yu Chang, Chih-Hui Chan, Chun-Yi Chang, Shih-Chyn Lin, Hsin-Wei Lee
  • Patent number: 9842932
    Abstract: A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of semiconductor layers on the semiconductor substrate, each pair of semiconductor layers consists of a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type. The second semiconductor layer is stacked on and contacts the first semiconductor layer.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: December 12, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Pin Chen, Chi-Cherng Jeng, Ru-Shang Hsiao, Li-Yi Chen
  • Publication number: 20170352309
    Abstract: An operating method of a display device includes providing a first supply voltage to a light emitting diode to make a driving current pass through the light emitting diode. The light emitting diode is electrically connected with an electrically controlled switch, the electrically controlled switch is electrically connected with a control circuit, the control circuit is configured to drive the electrically controlled switch according to a data signal and a scan signal, the first supply voltage is a pulse width modulation voltage, and a duty cycle of the first supply voltage is less than 100%.
    Type: Application
    Filed: June 6, 2016
    Publication date: December 7, 2017
    Inventors: Chun-Yi CHANG, Li-Yi CHEN
  • Publication number: 20170345923
    Abstract: A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of semiconductor layers on the semiconductor substrate, each pair of semiconductor layers consists of a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type. The second semiconductor layer is stacked on and contacts the first semiconductor layer.
    Type: Application
    Filed: December 1, 2016
    Publication date: November 30, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Pin CHEN, Chi-Cherng JENG, Ru-Shang HSIAO, Li-Yi CHEN
  • Publication number: 20170278760
    Abstract: A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.
    Type: Application
    Filed: March 25, 2016
    Publication date: September 28, 2017
    Inventors: Li-Yi CHEN, Pei-Yu CHANG, Chih-Hui CHAN, Chun-Yi CHANG, Shih-Chyn LIN, Hsin-Wei LEE
  • Publication number: 20170236760
    Abstract: A method for repairing a light-emitting diode (LED) lighting device is provided. The method includes the operations below. First, the LED lighting device is obtained. The LED lighting device includes a substrate having a top surface and a recess, a first bottom electrode disposed on the top surface and on a bottom surface of the recess, a second bottom electrode disposed on the top surface, an LED disposed in the recess and on the first bottom electrode, and a top transparent electrode disposed on the LED and the second bottom electrode. Then, a test is performed to know whether the first bottom electrode, the LED, the top transparent electrode, and the second bottom electrode form a part of an electrical loop. Finally, a connecting member is formed to electrically connect the first bottom electrode and the second bottom electrode if the electrical loop is open.
    Type: Application
    Filed: February 16, 2016
    Publication date: August 17, 2017
    Inventors: Li-Yi CHEN, Pei-Yu CHANG, Chih-Hui CHAN, Chun-Yi CHANG, Shih-Chyn LIN, Hsin-Wei LEE
  • Patent number: 9722134
    Abstract: A method for transferring a semiconductor structure is provided.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: August 1, 2017
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventors: Li-Yi Chen, Hsin-Wei Lee
  • Publication number: 20170179340
    Abstract: A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.
    Type: Application
    Filed: March 6, 2017
    Publication date: June 22, 2017
    Inventors: Li-Yi CHEN, Pei-Yu CHANG, Hsin-Wei LEE, Chun-Yi CHANG, Shih-Chyn LIN
  • Patent number: 9680077
    Abstract: A light-emitting diode (LED) lighting device includes a substrate, an isolation layer, a first bottom electrode, a second bottom electrode, at least one first vertical LED, a first conductive bonding layer, at least one second vertical LED, a second conductive bonding layer, a first transparent sealing material, a second transparent sealing material, and a top electrode. The substrate has a base portion and a plurality of protruding portions present on the base portion. The base portion and the protruding portions cooperate to define at least one first recess and at least one second recess. At least one of the first recess and the second recess has a bottom surface and at least one sidewall adjacent to the bottom surface. The bottom surface and the sidewall are reflective. The first vertical LED and the second vertical LED are electrically connected in series.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: June 13, 2017
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventors: Li-Yi Chen, Chih-Hui Chan
  • Patent number: 9590137
    Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: March 7, 2017
    Assignee: MIKRO MESA TECHNOLOGY CO., LTD.
    Inventors: Li-Yi Chen, Pei-Yu Chang, Chih-Hui Chan, Chun-Yi Chang, Shih-Chyn Lin, Hsin-Wei Lee
  • Publication number: 20170062650
    Abstract: A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.
    Type: Application
    Filed: August 27, 2015
    Publication date: March 2, 2017
    Inventors: Li-Yi CHEN, Shih-Chyn LIN, Hsin-Wei LEE, Pei-Yu CHANG
  • Publication number: 20170062683
    Abstract: A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.
    Type: Application
    Filed: August 27, 2015
    Publication date: March 2, 2017
    Inventors: Li-Yi CHEN, Shih-Chyn LIN, Hsin-Wei LEE, Pei-Yu CHANG
  • Publication number: 20170054390
    Abstract: A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.
    Type: Application
    Filed: August 17, 2015
    Publication date: February 23, 2017
    Inventors: Li-Yi CHEN, Shih-Chyn LIN, Hsin-Wei LEE, Pei-Yu CHANG
  • Patent number: 9570561
    Abstract: Some embodiments relate to an integrated circuit (IC) including one or more finFET devices. A finFET includes a fin of semiconductor material extending upwards from a semiconductor substrate. First and second source/drain regions, which have a first doping type, are spaced apart laterally from one another in the fin. A channel region is disposed in the fin and physically separates the first and second source/drain regions from one another. The channel region has a second doping type opposite the first doping type. A conductive gate electrode straddles the fin about the channel region and is separated from the channel region by a gate dielectric. A shallow doped region, which has the first doping type, is disposed near a surface of the fin around upper and sidewall fin regions. The shallow doped region extends continuously under the gate electrode between outer edges of the gate electrode.
    Type: Grant
    Filed: February 13, 2014
    Date of Patent: February 14, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ru-Shang Hsiao, Yi-Ju Chen, Sheng-Fu Yu, I-Shan Huang, Kuan Yu Chen, Li-Yi Chen
  • Publication number: 20170036342
    Abstract: A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.
    Type: Application
    Filed: August 3, 2015
    Publication date: February 9, 2017
    Inventors: Li-Yi CHEN, Pei-Yu CHANG, Chih-Hui CHAN, Chun-Yi CHANG, Shih-Chyn LIN, Hsin-Wei LEE
  • Publication number: 20160351548
    Abstract: A manufacturing method of a light emitting diode (LED) display device includes forming at least one sub-pixel circuit on a substrate, forming a primary electrical pad and a first backup electrical pad electrically connected to the sub-pixel circuit, disposing a first micro light emitting device on the primary electrical pad and testing the first micro light emitting device.
    Type: Application
    Filed: May 28, 2015
    Publication date: December 1, 2016
    Inventors: Li-Yi CHEN, Chih-Hui CHAN, Chun-Yi CHANG, Pei-Yu CHANG