Abstract: A display device includes a substrate, a multi-layer isolation structure, and a plurality of light emitting device sets is provided. The multi-layer isolation structure is formed on the substrate. The multi-layer isolation structure includes a first isolation structure which is in contact with the substrate, and a second isolation structure which is above the first isolation structure. The first isolation structure and the second isolation structure have different reflectances. The plurality of light emitting device sets are present on the substrate. Each of the light emitting device sets includes at least one light emitting device, and the light emitting device sets are spaced apart from each other at least by the multi-layer isolation structure.

Abstract: A micro-bonding structure including a substrate, a conductive pad, a bonding layer, a micro device, and a diffusive bonding portion is provided. The conductive pad is present on the substrate. The bonding layer is present on the conductive pad. The micro device is present on the bonding layer. The diffusive bonding portion is present between and electrically connected with the bonding layer and the conductive pad. The diffusive bonding portion consists of at least a part of elements from the bonding layer and at least a part of elements from the conductive pad. A plurality of voids are present between the bonding layer and the conductive pad, and one of the voids is bounded by the diffusive bonding portion and at least one of the conductive pad and the bonding layer.

Abstract: A light-emitting diode includes semiconductor layers and electrodes. A first type semiconductor layer includes first and second low resistance portions and a high resistance portion therebetween. The high resistance portion encloses the first low resistance portion and is configured to confine charge carriers substantially within the first low resistance portion. A resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion. A first electrode is electrically connected to the first low resistance portion and substantially no current flows between the first electrode and the second low resistance portion. A portion of the first type semiconductor layer is between the first electrode and a second type semiconductor layer. A second electrode is electrically connected to the second type semiconductor layer.

Abstract: A light emitting device is provided. The light emitting device includes a first type semiconductor layer, a second type semiconductor layer, an active layer, a plurality of first electrodes, and a second electrode. The first type semiconductor layer includes a plurality of low resistance portions and a high resistance portion. The low resistance portions are isolated from one another by the high resistance portion. The active layer is present between the first type semiconductor layer and the second type semiconductor layer. The active layer includes a first region and at least one second region. A threading dislocation density of the first region is greater than a threading dislocation density of the second region, and a vertical projection of at least one of the low resistance portions on the active layer at least partially overlaps with the second region.

Abstract: A light-emitting diode includes semiconductor layers and electrodes. A first type semiconductor layer includes first and second low resistance portions and a high resistance portion therebetween. The high resistance portion encloses the first low resistance portion and is configured to confine charge carriers substantially within the first low resistance portion. A resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion. A first electrode is electrically connected to the first low resistance portion and substantially no current flows between the first electrode and the second low resistance portion. A portion of the first type semiconductor layer is between the first electrode and a second type semiconductor layer. A second electrode is electrically connected to the second type semiconductor layer.

Abstract: A display device includes a substrate, at least one bonding electrode, at least one LED device electrically connected to the bonding electrode, and a transparent conductive layer. The bonding electrode is between the LED device and the substrate. The LED device includes a n type semiconductor layer, a p type semiconductor layer between the n type semiconductor layer and the bonding electrode, and an intermediate layer. The p type semiconductor layer includes a high resistance portion and a low resistance portion enclosed by the high resistance portion. A resistivity of the p type semiconductor layer increases from the low resistance portion toward the high resistance portion. The intermediate layer is between the p type semiconductor layer and the bonding electrode. The transparent conductive layer is electrically connected to the n type semiconductor layer. The LED device is between the transparent conductive layer and the bonding electrode.

Abstract: A method for binding a micro device to a substrate is provided. The method includes: locally showering a gas on a portion of the substrate, wherein the gas has a water vapor pressure higher than an ambient water vapor pressure; and placing the micro device over the portion of the substrate after a part of water in the gas is condensed to form a liquid layer on the portion of the substrate and contacting the micro device with the liquid layer, so that the micro device is gripped by a capillary force produced by the liquid layer and is substantially held in a position within a controllable region on the substrate.

Abstract: A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.

Abstract: A semiconductor device is provided and includes a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin includes plural pairs of semiconductor layers on the semiconductor substrate, each pair of semiconductor layers consists of a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type. The second semiconductor layer is stacked on and contacts the first semiconductor layer.

Abstract: A method for transferring a device includes the following steps: forming a pliable adhesive layer on a carrier substrate; placing the device over the pliable adhesive layer; contacting a transfer head assembly with the device, in which a pliable dielectric layer of the transfer head assembly is in contact with the device during the contacting and more pliable than the device, such that the pliable dielectric layer of the transfer head assembly deforms during the contacting, and the pliable adhesive layer is more pliable than the device, such that the pliable adhesive layer deforms during the contacting; actuating the transfer head assembly to create a grip force; picking up the device by the grip force created by the transfer head assembly; and placing the device onto a receiving substrate.

Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, and an active layer. The first type semiconductor layer includes a low resistance portion and a high resistance portion. The low resistance portion is separated from at least one edge of the first type semiconductor layer by the high resistance portion, and the resistivity of the first type semiconductor layer is increased from the low resistance portion toward the high resistance portion. The active layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The active layer has a first region and a second region, in which the first region has a threading dislocation density greater than that of the second region, and a vertical projection of the low resistance portion on the active layer at least partially overlaps with the second region.

Abstract: A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.

Abstract: A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

Abstract: A method for manufacturing a display device is provided. The method includes: forming at least two bottom conductive lines on an array substrate; disposing at least four micro light emitting devices respectively on the bottom conductive lines; forming at least one filling material covering the micro light emitting devices; forming at least four openings in the filling material by photolithography, such that the micro light emitting devices are respectively exposed by the openings; and forming at least two upper conductive lines on the filling material, wherein the upper conductive lines are electrically connected to the micro light emitting devices through the openings, and the upper conductive lines and the bottom conductive lines cross at the micro light emitting devices.

Abstract: A method for binding a micro device to a conductive pad of an array substrate is provided. The method includes: forming a liquid layer on the conductive pad of the array substrate; disposing the micro device over the conductive pad such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the conductive pad, wherein the micro device comprises an electrode facing the conductive pad; and evaporating the liquid layer such that the electrode is bound to and is in electrical contact with the conductive pad.

Abstract: An operating method of a display device includes providing a first supply voltage to a light emitting diode to make a driving current pass through the light emitting diode. The light emitting diode is electrically connected with an electrically controlled switch, the electrically controlled switch is electrically connected with a control circuit, the control circuit is configured to drive the electrically controlled switch according to a data signal and a scan signal, the first supply voltage is a pulse width modulation voltage, and a duty cycle of the first supply voltage is less than 100%.

Abstract: A method for manufacturing a display device is provided. The method includes: forming at least two bottom conductive lines on an array substrate; disposing at least four micro light emitting devices respectively on the bottom conductive lines; forming at least one filling material covering the micro light emitting devices; forming at least four openings in the filling material by photolithography, such that the micro light emitting devices are respectively exposed by the openings; and forming at least two upper conductive lines on the filling material, wherein the upper conductive lines are electrically connected to the micro light emitting devices through the openings, and the upper conductive lines and the bottom conductive lines cross at the micro light emitting devices.

Abstract: A display device includes an array substrate, the bottom conductive lines, the micro light emitting devices, the conductive layers, the upper conductive lines, and a filling material. The bottom conductive lines are present on the array substrate. The conductive layers are respectively present between the micro light emitting devices and the bottom conductive lines. The upper conductive lines cross the bottom conductive lines at the micro light emitting devices. Each of the micro light emitting devices is present between at least one of the bottom conductive lines and at least one of the upper conductive lines. The filling material is present on the array substrate and has at least four openings to respectively expose the micro light emitting devices. The upper conductive lines are electrically connected to the micro light emitting devices respectively through the openings.

Abstract: A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.

Abstract: A transfer head array includes a body and a plurality of transfer heads. The body includes a base portion and at least one wall portion. The wall portion is located on and stationary to the base portion. The wall portion has a top surface. The transfer heads are located on the top surface of the wall portion. The wall portion is continuous at least between two of the transfer heads.