Patents by Inventor Liang Chao

Liang Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5532960
    Abstract: A circuit is provided for supplying a negative high voltage to an integrated circuit from a high positive voltage source V.sub.PP. The negative voltage is applied to a plurality of FLASH electrically erasable programmable read only memory (EPROM) cells. The circuit includes an oscillator coupled to a voltage converter which provides a periodic signal. The periodic signal is coupled to a charge pump including three P-channel type transistors to produce the negative voltage. The source and drain of the first transistor is coupled to the periodic signal. The second transistor's gate and drain is coupled to a reference ground potential with the source coupled to the first transistor's gate. Finally, the third transistor's drain and gate is coupled to the first transistor's gate and the third transistor's source outputs negative voltage to floating gates of the plurality of FLASH EPROM cells during an erase operation. Further, the negative voltage generated is relatively precise, so no regulation is required.
    Type: Grant
    Filed: January 11, 1995
    Date of Patent: July 2, 1996
    Assignee: Macronix International Co., Ltd.
    Inventors: Tien-Ler Lin, Liang Chao
  • Patent number: 5528546
    Abstract: For non-volatile memory devices, such as flash EPROM integrated circuits, which have memory cells and reference cells, and sense circuitry responsive to addressed memory cells and the reference cells, and in which a read potential is supplied to the gate of the selected memory cells and a reference potential is supplied to the gate of a reference memory cell during a read mode, the state of the programmable memory cells is verified by (1) supplying a first verify potential to the gate of an address programmable memory cell; and (2) supplying a second verify potential to the gate of the reference cell which is different from the first verify potential. Because cell current is a very strong function of the gate voltage, applying different gate voltages to the memory and reference cells is equivalent to adjusting the sense ratio.
    Type: Grant
    Filed: May 19, 1995
    Date of Patent: June 18, 1996
    Assignee: Macronix International Company, Ltd.
    Inventors: Liang Chao, Tien-Ler Lin, Tom D.-H. Yiu
  • Patent number: 5463586
    Abstract: For non-volatile memory devices, such as flash EPROM integrated circuits, which have memory cells and reference cells, and sense circuitry responsive to addressed memory cells and the reference cells, and in which a read potential is supplied to the gate of the selected memory cells and a reference potential is supplied to the gate of a reference memory cell during a read mode, the state of the programmable memory cells is verified by (1) supplying a first verify potential to the gate of an address programmable memory cell; and (2) supplying a second verify potential to the gate of the reference cell which is different from the first verify potential. Because cell current is a very strong function of the gate voltage, applying different gate voltages to the memory and reference cells is equivalent to adjusting the sense ratio.
    Type: Grant
    Filed: August 31, 1993
    Date of Patent: October 31, 1995
    Assignee: Macronix International Co., Ltd.
    Inventors: Liang Chao, Tien-Ler Lin, Tom D. Yiu
  • Patent number: 5399928
    Abstract: A circuit is provided for supplying a negative high voltage to an integrated circuit from a high positive voltage source V.sub.PP. The negative voltage is applied to a plurality of FLASH electrically erasable programmable read only memory (EPROM) cells. The circuit includes an oscillator coupled to a voltage converter which provides a periodic signal. The periodic signal is coupled to a charge pump including three P-channel type transistors to produce the negative voltage. The source and drain of the first transistor is coupled to the periodic signal. The second transistor's gate and drain is coupled to a reference ground potential with the source coupled to the first transistor's gate. Finally, the third transistor's drain and gate is coupled to the first transistor's gate and the third transistor's source outputs negative voltage to floating gates of the plurality of FLASH EPROM cells during an erase operation. Further, the negative voltage generated is relatively precise, so no regulation is required.
    Type: Grant
    Filed: August 31, 1993
    Date of Patent: March 21, 1995
    Assignee: Macronix International Co., Ltd.
    Inventors: Tien-Ler Lin, Liang Chao
  • Patent number: 5223879
    Abstract: A hair-style simulation cassette has a back strip, a U-shaped frame fixed to the back strip, a panel fixed to the U-shaped frame, a film fixed to the panel, and a photograph carrier receivable in the U-shaped frame. The photograph carrier has a cavity for receiving a photograph. The panel has a viewing window through which the photograph is visible and an adjusting window through which the photograph is adjustable.
    Type: Grant
    Filed: May 4, 1992
    Date of Patent: June 29, 1993
    Inventor: Chung-Liang Chao
  • Patent number: 5175934
    Abstract: A utility knife switchable between a non-rotatable mode for cutting a straight line and a rotatable mode for cutting a curved line includes a rod which engages to a blade at one end and the other end being rotatably positioned against a bearing device thereby providing the blade with a rotation axle for cutting a curve. A switching button device is installed above the limiting device for forcing the rod and the blade to work in a non-rotatable mode or a rotatable mode.
    Type: Grant
    Filed: May 21, 1992
    Date of Patent: January 5, 1993
    Inventor: Chung-liang Chao