Abstract: Embodiments of this application provide a recovery method for a terminal device startup failure and a terminal device. The method includes: determining that a failure indication event occurs in a startup process, where the failure indication event is used to indicate a startup failure; determining at least one recovery policy based on a type of the failure indication event and/or a cause of the failure indication event; and performing startup recovery based on the at least one recovery policy.

Abstract: A semiconductor device includes a gate structure, a double diffused region, a source region, a drain region, a first gate spacer, and a second gate spacer. The gate structure is over a semiconductor substrate. The double diffused region is in the semiconductor substrate and laterally extends past a first side of gate structure. The source region is in the semiconductor substrate and is adjacent a second side of the gate structure opposite the first side. The drain region is in the double diffused region in the semiconductor substrate and is of a same conductivity type as the double diffused region. The first gate spacer is on the first side of the gate structure. The second gate spacer extends upwardly from the double diffused region along an outermost sidewall of the first gate spacer and terminates prior to reaching a top surface of the gate structure.

Abstract: The present disclosure relates to a voltage regulating circuit, including an impedance circuit, a control unit and a power supply circuit. The impedance circuit has a first node and a second node, wherein the second node is electrically coupled to a load. The control unit is electrically coupled to the first node and configured to control a first voltage value of the first node according to a control signal. An input terminal of the power supply circuit is electrically coupled to the second node. An output of the power supply circuit is electrically coupled to the load. The power supply circuit is configured d to output a control voltage to the load according to a second voltage value of the second node.

Abstract: A vehicle and a vehicle controlling method are provided. The vehicle includes a computing system; a vehicle controlling module coupled to the computing system; and a positioning module coupled to the computing system and the vehicle controlling module. The vehicle controlling module receives a safe stop path and a fusion coordinate from the computing system. When the vehicle controlling module determines that an abnormality occurs in the computing system, the vehicle controlling module receives a positioning coordinate from the positioning module and calculates an offset corresponding to the positioning coordinate and the fusion coordinate. The vehicle controlling module transmits a vehicle controlling command to the vehicle according to the offset and the safe stop path.

Abstract: The present invention provides high affinity anti-CD40 monoclonal antibodies and related compositions, which may be used in any of a variety of therapeutic methods for the treatment of cancer and other diseases.

Abstract: The present invention provides high affinity anti-CD40 monoclonal antibodies and related compositions, which may be used in any of a variety of therapeutic methods for the treatment of cancer and other diseases.

Abstract: An avalanche-protected field effect transistor includes, within a semiconductor substrate, a body semiconductor layer and a doped body contact region having a doping of a first conductivity type, and a source region a drain region having a doping of a second conductivity type. A buried first-conductivity-type well may be located within the semiconductor substrate. The buried first-conductivity-type well underlies, and has an areal overlap in a plan view with, the drain region, and is vertically spaced apart from the drain region, and has a higher atomic concentration of dopants of the first conductivity type than the body semiconductor layer. The configuration of the field effect transistor induces more than 90% of impact ionization electrical charges during avalanche breakdown to flow from the source region, to pass through the buried first-conductivity-type well, and to impinge on a bottom surface of the drain region.

Abstract: A technique to provide power management for multiple dice. The technique provides for determining for each respective die of the multiple dice, power consumption for operating each respective die; and generating a respective signal from each respective die that corresponds to the power consumption of each respective die. The technique further provides for converting each respective signal to a respective analog voltage to drive a common node; and utilizing a charge storage device coupled to the common node to accumulate the respective analog voltages from the dice, where the accumulated voltage indicates total power consumption of the dice.

Abstract: Disclosed is a 3D architecture of ternary content-addressable memory (TCAM), comprising a first transistor layer, a second transistor layer, a third transistor layer and a fourth transistor layer. The first transistor layer and the second transistor layer are disposed on a first plane. The third transistor layer and the fourth transistor layer are respectively stacked on the first transistor layer and the second transistor layer in a second direction perpendicular to the first plane. Two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a first memory cell of the TCAM. The other two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a second memory cell of the TCAM.

Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: A vehicle control method and a vehicle control system are provided. A lateral distance between a vehicle and a tunnel wall of a tunnel is obtained through a lidar sensor when the vehicle is moving in a lane in the tunnel. A lateral offset parameter between the vehicle and a lane centerline is obtained based on the lateral distance. A moving direction of the vehicle is controlled according to the lateral offset parameter.

Abstract: A memory management operation is executed on a plurality of memory dies of a memory sub-system. The memory sub-system determines whether a first measured current level corresponding to execution of the memory management operation satisfies a condition pertaining to a threshold peak current level. The memory sub-system determines whether a second measured current level corresponding to execution of the memory management operation satisfies the condition pertaining to the threshold peak current level. Mask data is generated identifying the first measured current level and the second measured current level. A request is received from a host system to execute the memory management operation. The memory sub-system performs, based on the mask data, a peak current management action during execution of the memory management operation.

Abstract: A system to send a first command to a first memory die of a plurality of memory dies of a memory sub-system the first command to execute an initialization process. The system reads a first bit value from the first memory die, the first bit value indicating the first memory die is executing a peak current phase of the initialization process. The system reads a second bit value from the first memory die, the second bit value indicating the first memory die is executing a safe phase of the initialization process. In response to reading the second bit value, a second command is sent to a second memory die to execute the initialization process.

Abstract: In some embodiments, the present disclosure relates to a high voltage device that includes a substrate comprising a first semiconductor material. A channel layer that comprises a second semiconductor material is arranged over the substrate. An active layer that comprises a third semiconductor material is arranged over the channel layer. Over the active layer is a source contact spaced apart from a drain contact. A gate structure is arranged laterally between the source and drain contacts and over the active layer to define a high electron mobility transistor (HEMT) device. Between the gate structure and the source contact is a cap structure, which is coupled to the source contact and laterally spaced from the gate structure. The cap structure and a gate electrode of the gate structure comprise a same material.

Abstract: A system to send a first command to a first memory die of a plurality of memory dies of a memory sub-system the first command to execute an initialization process. The system reads a first bit value from the first memory die, the first bit value indicating the first memory die is executing a peak current phase of the initialization process. The system reads a second bit value from the first memory die, the second bit value indicating the first memory die is executing a safe phase of the initialization process. In response to reading the second bit value, a second command is sent to a second memory die to execute the initialization process.

Abstract: A negative pressure protection system has a cover enclosing an inner space, a ventilation duct fluidly communicating with an air outlet port of the cover, a filter having an inlet end communicating with the ventilation duct, and an air exhausting device connected to an outlet end of the filter. The air exhausting device draws air out from the inner space of the cover via the ventilation duct. The air is filtered and purified by the filter and then is exhausted away by the exhausting device.

Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: A power control device for a computer system includes a detecting module, configured to detect an open/close state of a display device to generate an open/close signal; and a controller, coupled to the detecting module and coupled to a power supply device through a system management bus, configured to generate an enabling signal to conduct or block a power source of the computer system provided by the power supply device, and to wake up the power supply device, which is in a power saving mode, according to the open/close signal.

Abstract: A memory management operation is executed on a plurality of memory dies of a memory sub-system. The memory sub-system determines whether a first measured current level corresponding to execution of the memory management operation satisfies a condition pertaining to a threshold peak current level. The memory sub-system determines whether a second measured current level corresponding to execution of the memory management operation satisfies the condition pertaining to the threshold peak current level. Mask data is generated identifying the first measured current level and the second measured current level. A request is received from a host system to execute the memory management operation. The memory sub-system performs, based on the mask data, a peak current management action during execution of the memory management operation.

Abstract: A technique to provide power management for multiple dice. The technique provides for determining for each respective die of the multiple dice, power consumption for operating each respective die; and generating a respective signal from each respective die that corresponds to the power consumption of each respective die. The technique further provides, for each respective signal, driving a respective open-drain transistor to conduct, in which an output of each open-drain transistor connects to the common node and the common node connects to a reference voltage, to change a voltage of a common node corresponding to the respective signal; and utilizing the voltage of the common node to indicate total power consumption of the dice.