Abstract: A staggered and crossed heat storage adsorption bed and a seawater desalination waste heat storage system are provided, which relate to the field of seawater desalination and the technical field of thermochemical adsorption heat storage. The adsorption bed includes a bed body, wherein an adsorption cavity is arranged in the bed body; two sides of the adsorption cavity are respectively communicated with an inlet cavity and an outlet cavity; the adsorption cavity includes a vacuum heat insulation layer arranged at an outermost side; the vacuum heat insulation layer is embedded with an adsorption box fixing layer; a corner end adsorption box, a central adsorption box and a side adsorption box are staggered and crossed arranged in an inner cavity of the vacuum heat insulation layer through the adsorption box fixing layer.

Abstract: A slim heat-dissipation module is provided. The slim heat-dissipation module includes a first plate, a second plate, a first porous structure, a second porous structure, a first fluid, and a second fluid. The second plate is combined with the first plate to form a first type chamber and a second type chamber, wherein the first type chamber and the second type chamber are sealed and independent, respectively. The first porous structure is disposed in the first type chamber. The second porous structure is disposed in the second type chamber. The first fluid is disposed in the first type chamber. The second fluid is disposed in the second type chamber.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: An RF testing method is applied between a testing instrument and multiple devices under test at least including a first DUT and a second DUT. The testing instrument includes a signal generator and a signal analyzer. A sync signal is sent to the testing instrument and the first DUT, so that the first DUT occupies the signal generator to receive a testing signal from the signal generator. The first DUT sends an uplink signal to the signal analyzer based on the testing signal to occupy the signal analyzer for signal analysis at a first point in time. The sync signal is sent to the testing instrument and the second DUT, so that the second DUT occupies the signal generator to receive the testing signal from the signal generator at a second point in time. The first point in time is parallel to the second point in time.

Abstract: Provided are an audio/video processing method and apparatus, a device, and a storage medium. The method comprises: displaying text data corresponding to an audio/video to be edited, wherein the text data has a mapping relation with an audio/video timestamp of said audio/video; displaying said audio/video according to a time axis track; in response to a preset operation triggered for target text data in the text data, determining an audio/video timestamp corresponding to the target text data as a target audio/video timestamp; and processing, on the basis of the preset operation, an audio/video clip corresponding to the target audio/video timestamp in said audio/video.

Abstract: A power storage connector includes a socket, a sleeve and a plug. The socket includes a fixed plate, a connecting unit and a fixing component configured on the fixed plate, and a limiting structure configured around the outer side of the connecting unit. The sleeve includes a limited component and a fixing structure configured on the outer sidewall and the inner sidewall of the connecting portion respectively. When the sleeve sleeves on the connecting unit, the limited component is located in the limiting structure and configured to move along the limiting structure, so that the sleeve is capable of rotating on the connecting unit. The plug includes a plug case detachably coupled and linked with the sleeve. The plug case drives the sleeve to rotate to engage the fixing structure and the fixing component, so as to connect and fix the plug to the socket.

Abstract: An insertion device includes an upper casing, an insertion module and a lower casing. The insertion module is disposed in the upper casing, and includes a main body assembly, an insertion seat, a first elastic member, a retraction seat and a second elastic member. When the upper casing is depressed, the insertion seat is driven by the first elastic member to perform an automatic-insertion operation, such that limiting structure between the insertion seat and the retraction seat collapses upon the collapse of another limiting structure between the insertion seat and the main body assembly, and that the retraction seat is driven by the second elastic member to perform an automatic-retraction operation.

Abstract: A light-emitting element includes a pair of electrodes, a first light-emitting unit, a second light-emitting unit, and a charge generation layer. The first light-emitting unit, between the pair of electrodes, and the first light-emitting unit, includes a first light-emitting layer. The second light-emitting unit, between the pair of electrodes, includes a second light-emitting layer. A first luminescent layer includes a first main body material, a second main body material, a first guest material, and a first auxiliary material, and the first main body material forms a first excimer complex with the second main body material. A first excited triplet state energy level of the first auxiliary material is lower than a first excited triplet state energy level of the first excimer complex, and the first excited triplet state energy level of the first auxiliary material is higher than that of the first guest material.

Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: A data transmission method includes receiving, by first UE, bearer configuration information sent by a serving node; and performing, by the first UE, bearer configuration. A data transmission method, includes: sending, by a first base station, a sidelink (SL) data forwarding request to a second base station; and receiving, by the first base station, an SL data forwarding response sent by the second base station.

Abstract: A detection method for a malicious domain name in a domain name system (DNS) and a detection device are provided. The method includes: obtaining network connection data of an electronic device; capturing log data related to at least one domain name from the network connection data; analyzing the log data to generate at least one numerical feature related to the at least one domain name; inputting the at least one numerical feature into a multi-type prediction model, which includes a first data model and a second data model; and predicting whether a malicious domain name related to a malware or a phishing website exists in the at least one domain name by the multi-type prediction model according to the at least one numerical feature.

Abstract: The present disclosure discloses an optical imaging system including, sequentially from an object side to an image side along an optical axis, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens having reactive power. The first lens has positive refractive power, and the first lens is a glass lens; an object-side surface of the second lens is a convex surface, and an image-side surface of the second lens is a concave surface; and each of the fourth lens and the fifth lens has negative refractive power. An aperture value Fno of the optical imaging system satisfies Fno<1.4.

Abstract: The present disclosure provides an audio compression device, an audio compressing system and an audio compression method. The audio compression device comprises a first transceiver and a first processor. The first transceiver is connected to the first processor. The processor obtains an audio signal and an available bandwidth, and the processor performs an audio compression encoding on the audio signal to obtain a sample audio signal, and then compares with the audio signal and the sample audio signal to generate a residual signal, and the residual signal is transmitted according to the available bandwidth. The audio signal can be completely transmitted to an audio decompression device to reduce the distortion of the audio signal.

Abstract: An electronic device including an electronic unit and a redistribution layer is disclosed. The electronic unit has connection pads. The redistribution layer is electrically connected to the electronic unit and includes a first insulating layer, a first metal layer and a second insulating layer. The first insulating layer is disposed on the electronic unit and has first openings disposed corresponding to the connection pads. The first metal layer is disposed on the first insulating layer and electrically connected to the electronic unit through the connection pads. The second insulating layer is disposed on the first metal layer. The first insulating layer includes first filler particles, and the second insulating layer includes second filler particles. The first filler particles have a first maximum particle size, the second filler particles have a second maximum particle size, and the second maximum particle size is greater than the first maximum particle size.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.