Abstract: A semiconductor processing method includes: selecting a target state of a reticle based on a given data set, wherein the given data set comprises temperature profiles of the reticle correlated to a target overlay performance, and the target state is a state in which a deformation of the reticle is substantially unchanged; regulating the reticle to reach the target state; and performing an exposure process on a target workpiece by using the reticle.

Abstract: A resin composition includes resin and inorganic filler. The resin includes liquid rubber resin, polyphenylene ether resin, and a crosslinking agent. Compared to a total of 100 parts by mass of the resin, the usage amount of the inorganic filler is at least greater than or equal to 40 parts by mass.

Abstract: A multifunctional catalyst, a method for producing the same, and a method for using the same are provided. The multifunctional catalyst is applicable for recycling a polyester fabric. The multifunctional catalyst includes a carrier, and a first functional ionic liquid and a second functional ionic liquid that are grafted on the carrier. The carrier is an inorganic composite powder material, and is composed of following chemical components: C: Na—Ni/Al2O3. In a process of recycling the polyester fabric, the multifunctional catalyst simultaneously decolorizes and depolymerizes the polyester fabric. The first functional ionic liquid is used to decolorize the polyester fabric, and the second functional ionic liquid is used to depolymerize the polyester fabric.

Abstract: An optical sensing device is disclosed. The optical sensing device includes a sensing pixel, a driving circuit and a first light shielding layer. The sensing pixel includes a sensing circuit and a sensing element electrically connected to the sensing circuit. The driving circuit is electrically connected to the sensing circuit. The first light shielding layer includes at least one first opening corresponding to the sensing element, and the first light shielding layer is overlapped with the driving circuit in a top-view direction of the optical sensing device.

Abstract: A trimming method is provided. The trimming method includes the following steps. A first wafer including a substrate and a device layer over a first side of the substrate is provided. The first wafer is bonded to a second wafer with the first side of the substrate facing toward the second wafer. An edge trimming process is performed to remove a trimmed portion of the substrate from a second side opposite to the first side vertically downward toward the first side in a first direction along a perimeter of the substrate, wherein the edge trimming process results in the substrate having a flange pattern laterally protruding from the device layer and laterally surrounding an untrimmed portion of the substrate along a second direction perpendicular to the first direction.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: An apparatus for transferring an electronic component including a first platform, a second platform, an actuator mechanism, and a flexible push generator is provided. The first platform is configured to carry a carrier substrate. The second platform is configured to carry a target substrate. The actuator mechanism is configured to actuate the first platform and the second platform to approach and move away from each other. The flexible push generator is disposed near the first platform or the second platform and generating a plurality of flexible pushes toward the first platform and the second platform in response to the first platform and the second platform actuated in a way that the first platform and the second platform approach each other.

Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Abstract: A photovoltaic cell is provided, including a substrate, a doped layer, a tunneling dielectric layer, doped conductive layers, first electrodes, and conductive transport layers. A doping concentration of the doped layer is greater than that of the substrate. The doped layer includes first doped regions, second doped regions and third doped regions. A doping concentration of each first doped region is less than that of each second doped region and that of each third doped region. The tunneling dielectric layer is disposed on the first and second doped regions. Each doped conductive layer is aligned with a first doped region and is disposed on a tunneling dielectric layer. Each first electrode is disposed on and electrically connected to the doped conductive layer. Each conductive transport layer is aligned with a second doped region and is disposed on the tunneling dielectric layer.

Abstract: A powder composition includes a first powder, a second powder, and a modified functional group. A particle size range of the first powder is between 1 micron and 100 microns. The second powder and the modified functional group are modified on the first powder. A particle size range of the second powder is between 10 nanometers and 1 micron. A manufacturing method of a powder composition is also provided.

Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.

Abstract: A rubber resin material with high dielectric constant and a metal substrate with high dielectric constant are provided. The rubber resin material with high dielectric constant includes a rubber resin composition with high dielectric constant and inorganic fillers. The rubber resin composition with high dielectric constant includes: 40 wt % to 70 wt % of a liquid rubber, 10 wt % to 30 wt % of a polyphenylene ether resin, and 20 wt % to 40 wt % of a crosslinker. A molecular weight of the liquid rubber ranges from 800 g/mol to 6000 g/mol. A dielectric constant of the rubber resin material with high dielectric constant is higher than or equal to 2.0.

Abstract: Techniques for presenting a content item with a media item are described. The techniques include receiving user input indicating a placement preference for a content item to be presented with a media item. The placement preference indicates a presentation preference of the content item relative to presentation of the media item. The placement preference is used to influence selection of a media item with which the content item is to be presented.

Abstract: A lithography method in semiconductor fabrication is provided. The method includes generating a plurality of drops of a target material through a plurality of nozzles, adjacent two of the plurality of nozzles having a distance less than a width of a first one of the adjacent two of the plurality of nozzles, wherein the plurality of drops are aggregated to an elongated droplet; generating a laser pulse to convert the elongated droplet into plasma that generates an extreme ultraviolet (EUV) radiation; exposing a semiconductor substrate to the EUV radiation.

Abstract: An oil filling device is provided, including: a main body, configured to cover an open end portion of an oil pot, including at least one first sliding portion and a channel; a control member, rotatably disposed on the main body; two clamping members, at least one of the two clamping members including a second sliding portion slidably mounted to the at least one first sliding portion; at least one guiding unit, each of the at least one guiding unit including a guiding groove and an assembly portion; at least one positioning member, connected to the assembly portion and slidably disposed within the guiding groove, wherein rotation of the control member operates to control at least one of the two clamping members to move relative to the main body so that the two clamping members relatively approach to or distance away from each other.

Abstract: A magnetic device having a first coil and a second coil, wherein the first coil is wound in a first direction when viewed from the first terminal part of the first coil, and the second coil is wound in a second direction when viewed from the third terminal part of the second coil, wherein the first direction and the second direction are opposite to each other for canceling magnetic fluxes generated by the first coil and the second coil.