Abstract: A method of printing a document may include receiving a print stream including a document to be printed and a license associated with the document that may include one or more digital rights management (DRM) privileges. The method may include identifying output management operations associated with printing the document, and, for each output management operation determining whether the output management operation violates any of the DRM privileges, in response to the output management operation violating a DRM privilege, assigning a first status to the output management operation, and in response to the output management operation not violating one or more of the DRM privileges, assigning a second status to the output management operation. The method may include assigning the document to a print device that is DRM-compliant and capable of printing the document in accordance with each print attribute, and instructing the print device to print the document.

Abstract: A composition suitable for forming a paint marking on a roadway comprises a polyfunctional acrylate having at least four acrylate groups, an epoxy component and a polyfunctional amine. The polyfunctional acrylate reacts with the polyfunctional amine to form an adduct with secondary amine groups. The secondary amine reacts with the epoxy component to yield a chemically high crosslinked material having a no track time of less than about five minutes.

Abstract: An adjustable print media path system and method are disclosed. In one form, the print media path system incorporates a frame and a guide member that is moveably coupled to the frame between a cartridge position and an external media position. Inserting print media into the receptacle moves the guide member between the external media position and the cartridge position, thereby adjusting the print media path.

Abstract: A method (and semiconductor device) of fabricating a semiconductor device utilizes a thermal proximity correction (TPC) technique to reduce the impact of thermal variations during anneal. Prior to actual fabrication, a location of interest (e.g., a transistor) within an integrated circuit design is determined and an effective thermal area around the location is defined. Thermal properties of structures intended to be fabricated within this area are used to calculate an estimated temperature that would be achieved at the location of interest from a given anneal process. If the estimated temperature is below or above a predetermined target temperature (or range), TPC is performed. Various TPC techniques may be performed, such as the addition of dummy cells and/or changing dimensions of the structure to be fabricated at the location of interest (resulting in an modified thermally corrected design, to suppress local variations in device performance caused by thermal variations during anneal.

Abstract: Extending the Spanning Tree Protocol (STP) to provide redundancy and avoid loops in the topology of a service domain associated with a data transport service provided using a provider core network is disclosed. At each of a plurality of provider edge (PE) devices participating in the service, each participating PE being connected to the other participating PE's by a full mesh of mesh connections through the provider core network, a virtual core port is defined that encompasses all of the ports on the PE that are associated with a mesh connection from the PE to one or more other PE's participating in the service. Each participating PE is configured to associate the virtual core port with a virtual core bridge representing the core of the service domain. It is ensured that the virtual core bridge becomes and remains the root bridge.

Abstract: Methods and systems of applying a plurality of pieces of die attach film to a plurality of singulated dice are provided. The method can involve making intervals between rows and columns of a plurality of pieces of die attach film. The interval can be made by expanding an underlaid expandable film on which the plurality of pieces of die attach film are placed or by removing portions of the die attach film between rows and columns of the plurality of pieces of die attach film. The method can further involve placing a plurality of singulated dice back side down on the plurality of pieces of die attach film.

Abstract: A semiconductor device provides a substrate having a first region and a second region. A sacrificial first gate is formed in the first region. Source/drain are formed in the first region. A second region gate dielectric is formed in the second region. A second region gate is formed on the second region gate dielectric. A second region source/drain is formed in the second region. A sacrificial layer is formed over the sacrificial first gate, the source/drain, the first region, and the second region. The sacrificial first gate is exposed. A gate space is formed by removing the sacrificial first gate. A first region gate dielectric is formed in the gate space. A first region gate is formed on the first region gate dielectric. The sacrificial layer is removed.

Abstract: Embodiments of the present invention provide for apparatus and methods for performing unload operations, including enabling read/write heads to reach a desired velocity at the ramp. Embodiments of the present invention are particularly beneficial for handheld products where low power consumption and reliability are important requirements.

Abstract: A method and apparatus for manufacturing a semiconductor device is provides a substrate having a first region and a second region. A sacrificial first gate is formed in the first region. Source/drain are formed in the first region. A second region gate dielectric is formed in the second region. A second region gate is formed on the second region gate dielectric. A second region source/drain is formed in the second region. A sacrificial layer is formed over the sacrificial first gate, the source/drain, the first region, and the second region. The sacrificial first gate is exposed. A gate space is formed by removing the sacrificial first gate. A first region gate dielectric is formed in the gate space. A first region gate is formed on the first region gate dielectric. The sacrificial layer is removed.

Abstract: A flat panel mount for a plasma television having a back and a wall plate has an inner bracket, an outer bracket and a positioning assembly. The outer bracket covers the inner bracket inside and is pivotally mounted to the inner bracket. The positioning assembly is mounted between and abuts with the inner bracket and the outer bracket. Two outer brackets are mounted to the back of the plasma television and the inner brackets are mounted to the wall plate so that the plasma television is hung on a wall with two mounts with such an arrangement, to adjust the display angle of a plasma television is convenient.

Abstract: A method for generating a velocity command for an actuator assembly is provided. The actuator assembly includes an actuator arm, which is to move over a plurality of surfaces. The method begins by providing a compensation torque for each of the plurality of surfaces. A position of the actuator arm is determined so that it may be mapped to one of the plurality of surfaces, which is the present surface over which the actuator arm is moving. A target velocity is then provided for the actuator arm and input to a controller, which generates a velocity command from the target velocity and a selected compensation torque, which is the compensation torque of the present surface.

Abstract: DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide. However, annealing under these conditions has been found to cause a deterioration of the electrical performance of devices. This problem has been overcome by annealing, in a 1:4 oxygen-nitrogen mixture (1,050° C. at about 10 torr) instead of in helium or nitrogen oxide. This results in a gate oxide that is resistant to boron contamination without suffering any loss in its electrical properties.

Abstract: A method and apparatus for manufacturing a semiconductor device is provides a substrate having a first region and a second region. A sacrificial first gate is formed in the first region. Source/drain are formed in the first region. A second region gate dielectric is formed in the second region. A second region gate is formed on the second region gate dielectric. A second region source/drain is formed in the second region. A sacrificial layer is formed over the sacrificial first gate, the source/drain, the first region, and the second region. The sacrificial first gate is exposed. A gate space is formed by removing the sacrificial first gate. A first region gate dielectric is formed in the gate space. A first region gate is formed on the first region gate dielectric. The sacrificial layer is removed.

Abstract: An apparatus for illumination comprises a light source operable to generate a radiation pattern. The apparatus further comprises a light guide adjacent the light source, which is operable to be illuminated by the radiation pattern. The light guide comprises a pattern of varying sized dots operable to diffusely reflect the illuminating radiation pattern. The dot pattern comprises monotonically increasing dot sizes intermediate between the smallest and the largest dot sizes, such that the smallest dot size is proximate to the light source and the largest dot size is distal from the light source.

Abstract: Extending the Spanning Tree Protocol (STP) to provide redundancy and avoid loops in the topology of a service domain associated with a data transport service provided using a provider core network is disclosed. At each of a plurality of provider edge (PE) devices participating in the service, each participating PE being connected to the other participating PE's by a full mesh of mesh connections through the provider core network, a virtual core port is defined that encompasses all of the ports on the PE that are associated with a mesh connection from the PE to one or more other PE's participating in the service. Each participating PE is configured to associate the virtual core port with a virtual core bridge representing the core of the service domain. It is ensured that the virtual core bridge becomes and remains the root bridge.

Abstract: A method of handling resonance effects on disc drives includes the steps of monitoring a position error signal (PES) for an actuator arm of a disc drive, generating a feedforward compensation signal from the PES using a bandpass filter, and applying the compensation signal to a servo control signal. The bandpass filter has a center frequency set to a known resonance frequency. A disc drive includes an actuator assembly including an arm for carrying a head in a transducing relation with respect to a disc in response to a control signal, and a controller that monitors a PES for the arm and generates the control signal. The controller includes a servo controller that generates a servo control signal from the PES, and a feedforward compensation element which bandpass filters the PES to generate a compensation signal which is combined with the servo control signal to generate the control signal.

Abstract: An apparatus for illumination comprises a light source operable to generate a radiation pattern. The apparatus further comprises a light guide adjacent the light source, which is operable to be illuminated by the radiation pattern. The light guide comprises a pattern of varying sized dots operable to diffusely reflect the illuminating radiation pattern. The dot pattern comprises monotonically increasing dot sizes intermediate between the smallest and the largest dot sizes, such that the smallest dot size is proximate to the light source and the largest dot size is distal from the light source.

Abstract: DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide. However, annealing under these conditions has been found to cause a deterioration of the electrical performance of devices. This problem has been overcome by annealing, in a 1:4 oxygen-nitrogen mixture (1,050° C. at about 10 torr) instead of in helium or nitrogen oxide. This results in a gate oxide that is resistant to boron contamination without suffering any loss in its electrical properties.

Abstract: An display support has a yoke connecting between a securing plate and a pivot plate. The yoke has a linkage movably received between confining holes and a threaded bolt extending through a central hole in the securing plate to be screwingly connected to a nut. The yoke is pivotally connected to the pivot plate via a pivot. Therefore, adjustment of the nut changes the angle of the pivot plate relative to the securing plate.