Abstract: Disclosed are a service lifetime monitoring and early warning method, a memory storage device, and a memory control circuit unit. The method includes: reading a history information from a rewritable non-volatile memory module, calculating a remaining lifetime based on the history information and a user habit, generating an early warning signal, and outputting the remaining lifetime and the early warning signal in response to the remaining lifetime being lower than a preset lifetime.

Abstract: A variable temperature test system and an operation method thereof are provided. The variable temperature test system includes a main control device, multiple test devices, and a variable temperature test platform. The variable temperature test platform is coupled to the main control device and the test devices. The main control device provides an adjustment parameter according to at least one pending test. The variable temperature test platform includes multiple test areas, multiple temperature sensors, and a temperature control module. The test areas are respectively coupled to the test devices. The temperature sensors are respectively disposed in the test areas. The temperature control module is coupled to the test areas. The temperature control module adjusts a temperature of at least one test area according to the adjustment parameter.

Abstract: A temperature control method and a temperature control system for controlling a temperature of a target device are disclosed. The target device is disposed in a temperature control device. The method includes: controlling an internal temperature of the temperature control device according to a base parameter and a compensation parameter; detecting a temperature of the target device via a temperature sensor during the period that the internal temperature of the temperature control device is controlled according to the base parameter and the compensation parameter; and adjusting the compensation parameter according to the temperature of the target device to change the internal temperature of the temperature control device.

Abstract: An electrowetting display panel includes an upper substrate, a lower substrate opposite to the upper substrate, and multiple separation pieces between the upper and the lower substrate. The upper substrate, the lower substrate, and each separation piece together enclose a cavity, which is divided into a first cavity and a second cavity vertically communicated. The electrowetting display panel further includes a first fluid and a second fluid immiscible with each other. The first fluid is an opaque liquid disposed in the first cavity. The second fluid is a transparent liquid disposed in the second cavity. The first fluid has a density less than that of the second fluid. One of the first fluid and the second fluid is charged. Under an action of the upper and the lower electrode layer, the first fluid and the second fluid are operative to flow between the first and the second cavity.

Abstract: The present disclosure relates to an rebar-free prestressed concrete and a forming method therefor. The unreinforced prestressed concrete includes: a base layer, which is a mortar, concrete or neat paste pouring piece, where the base layer has a deformation value S1; and a prestressed layer disposed on a surface of the base layer and completely covering the base layer. The prestressed layer is a mortar, concrete or neat paste pouring piece, and does not include a steel bar. The prestressed layer has a deformation value S2, where S1 is smaller than S2. The solved technical problem is how to achieve an unreinforced prestressed concrete having a prestressed surface layer without the use of steel bar tensionsing, allowing same to improve the crack resistance and durability of a building without increasing new investment, reducing construction costs without bringing about fire hazards, and thus improving suitability for practical use.

Abstract: Disclosed are a method and a device for identifying full-section excavation parameters of large-section tunnel with broken surrounding rock, which is capable of solving the problem of inaccurate arrangement of blasting hole points in tunnel excavation engineering, including following steps: establishing a three-dimensional finite element model based on a blasting section design of a tunnel; performing a simulation with the three-dimensional finite element model based on blasting design parameters to obtain blasting quality parameters; selecting a group closest to a preset quality parameter from multiple groups of the blasting design parameters as target blasting design parameters, wherein the preset quality parameter is an acceptance grade standard of the tunnel; obtaining first thermal imaging information of a first hot spot of a surface to be blasted; calibrating actual hole spacing parameters based on the first thermal imaging information and the target blasting design parameters.

Abstract: Provided are a display baseplate, a mould assembly, a spliced display module, and a display apparatus. The display baseplate includes a backplate light emitters and an encapsulation layer. The backplate includes a first main surface and a second main surface that are opposite to each other, and side surfaces connected to the first main surface and the second main surface light emitters are located on the first main surface, the encapsulation layer is at least partially located on the first main surface and covers the plurality of light emitters. The spliced display module includes a splicing units, the splicing units each include a splicing frame and a display baseplate, the display baseplate is fixed on the splicing frame with the light emitters away from the splicing frame; and the splicing frames of adjacent splicing units are spliced together. The display apparatus includes a display baseplate or a spliced display module.

Abstract: Disclosed are a display panel and a display device. The display panel includes: a base substrate; a detection circuit, located on the side of the base substrate, and including a transistor and a photosensitive detection component electrically connected to the transistor, and an orthographic projection of the transistor on the base substrate and an orthographic projection of the photosensitive detection component on the base substrate do not overlap with each other; a planarization layer, located on the side of the detection circuit facing away from the base substrate, and including a first surface facing away from the base substrate at the position in which the transistor is located, and a second surface facing away from the base substrate at the position in which the photosensitive detection component is located; and a light-emitting device, located on the side of the planarization layer away from the detection circuit.

Abstract: The display substrate includes: a substrate; a plurality of pixel units on the substrate, each pixel unit includes a plurality of sub-pixels, each sub-pixel includes a light-emitting element and a pixel drive circuit; a photosensitive circuit on the substrate; a first conductive film layer on the substrate. The pixel drive circuit includes a drive transistor, a gate electrode of the drive transistor is located on a side of a drive active layer away from the substrate, an orthographic projection of the gate electrode of the drive transistor on the substrate at least partially overlaps an orthographic projection of the drive active layer on the substrate. The first conductive film layer includes a first light-shielding portion between the substrate and the drive active layer, and an orthographic projection of the first light-shielding portion on the substrate at least partially overlaps the orthographic projection of the drive active layer on the substrate.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: Provided herein are KRAS G12C inhibitors, composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: Provided are a display substrate, a manufacturing method thereof and a display apparatus. The display substrate includes multiple sub-pixels, wherein each sub-pixel includes a light-emitting region and a non-light-emitting region, and each sub-pixel is provided with a drive circuit; the drive circuit includes a storage capacitor and multiple transistors; for each sub-pixel, the multiple transistors are in the non-light-emitting region, the storage capacitor is a transparent capacitor, and an orthographic projection of the storage capacitor on a base substrate coincides with the light-emitting region. A first electrode of the storage capacitor is disposed in a same layer as an active layer of the multiple transistors, but in a different layer from source and drain electrodes of the multiple transistors, and a second electrode of the storage capacitor is on a side of the first electrode close to the base substrate.

Abstract: The disclosure provides bovine-induced pluripotent stem cells along with compositions and methods for use in producing the same.

Abstract: A base structure of a cooling fan and a manufacturing method of the base structure are provided. The base structure includes a bearing, a shaft sleeve and a base. The bearing defines therein a first cylindrical cavity for receiving a shaft of the cooling fan. The shaft sleeve is made of a first material and defines therein a second cylindrical cavity. The shaft sleeve includes a protrusion part and a first engagement structure arranged at a first end and a second end of the shaft sleeve, respectively. The base is made of a second material and includes a second engagement structure. The second engagement structure is interlocked with the first engagement structure since the second engagement structure is integrally formed with the base. The first material has a greater rigidity than the second material.

Abstract: A power-supply control device and a power test system are disclosed. The power test system includes a memory and a processor. The processor is configured to: obtain at least one power-supply path manner of at least one power-down test device; determine at least one power-supply path interface according to the at least one power-supply path manner; determine at least one electronic switch according to the at least one power-supply path interface; determine at least one target device to be tested; obtain at least one power-down test instruction according to the at least one target device; establish a target power-supply path corresponding to the target device between the at least one power-supply path interface and the at least one electronic switch according to the power-supply path establishment parameter; and at the target power-supply path, perform a power-down operation according to the power-down execution parameter.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A first recess and a second recess are formed in a first region and a second region of a semiconductor substrate, respectively. A bottom surface of the first recess is lower than a bottom surface of the second recess in a vertical direction. A first gate oxide layer and a second gate oxide layer are formed concurrently. At least a portion of the first gate oxide layer is formed in the first recess, and at least a portion of the second gate oxide layer is formed in the second recess. A removing process is performed for removing a part of the second gate oxide layer. A thickness of the second gate oxide layer is less than a thickness of the first gate oxide layer after the removing process.

Abstract: A method for hardware management of DMA transfer commands includes accessing, by a first DMA engine, a DMA transfer command and determining a first portion of a data transfer requested by the DMA transfer command. Transfer of a first portion of the data transfer by the first DMA engine is initiated based at least in part on the DMA transfer command. Similarly, a second portion of the data transfer by a second DMA engine is initiated based at least in part on the DMA transfer command. After transferring the first portion and the second portion of the data transfer, an indication is generated that signals completion of the data transfer requested by the DMA transfer command.

Abstract: The present disclosure provides novel 15-hydroxy-prostaglandin dehydrogenase inhibitors, pharmaceutical compositions comprising such compounds, and methods of using such compounds and compositions in treating 15-hydroxy-prostaglandin dehydrogenase-mediated disease. Also provided are methods of making such compounds and intermediates thereof. The compounds have a general Formula (A). Further, the disclosure provides intermediates useful in the synthesis of compounds of Formula (A).

Abstract: A method of manufacturing a semiconductor structure with flush shallow trench isolation and gate oxide, including performing a first etching process to remove a pad oxide layer at one side of a STI and recess the substrate, the first etching process also forms a recess portion not covered by the first etching process and a protruding portion covered by the first etching process on the STI, forming a gate oxide layer on the recessed substrate, performing a second etching process to remove the protruding portion and the pad oxide layer and a first oxide layer on a drain region, performing a third etching process to remove a part of the STI and a second oxide layer, so that a top plane of the STI is flush with the gate oxide layer.