Abstract: Semiconductor device and method of fabricating the same, the semiconductor device includes a substrate, a first transistor, a second transistor, a third transistor, and a plurality of shallow trench isolations. The first transistor is disposed in a medium-voltage region and includes a first plane, a first gate dielectric layer, and a first gate electrode. The second transistor is disposed in a boundary region and includes a second plane, a second gate dielectric layer, and a second gate electrode. The third transistor is disposed in a lower-voltage region and includes a third plane, a third gate dielectric layer, and a third gate electrode. The shallow trench isolations are disposed in the substrate, wherein top surfaces of the shallow trench isolations in the medium-voltage region, the boundary region and the low-voltage region are coplanar with top surfaces of the first gate dielectric layer and the second gate dielectric layer.

Abstract: Provided are keratin BD-4, an encoding nucleic acid molecule thereof, an expression vector, a host cell, and a pharmaceutical composition containing the keratin. The keratin BD-4 can be used for preparing drugs having antipyretic and analgesic, antitussive and expectorant, and antiepileptic effects.

Abstract: A mapping table updating method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving, a plurality of operation commands from a host system; performing a first table updating operation according to a first operation command and a third operation command among the operation commands to read and update a first sub-mapping table and a third sub-mapping table from a rewritable non-volatile memory module; and after the first table updating operation is finished, performing a second table updating operation according to a second operation command among the operation commands to read and update a second sub-mapping table from the rewritable non-volatile memory module.

Abstract: Provided herein are KRAS G12C inhibitors, such as composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Abstract: The present disclosure provides a display substrate, including: a base substrate, which includes a display region and a driving region arranged on at least one side of the display region; a first electrode layer disposed in the display region; a signal output part disposed in the driving region, the first electrode layer is electrically coupled to the signal output part, the first electrode layer comprises a plurality of electrode regions each having a same area; and a plurality of auxiliary electrodes, which are in one-to-one correspondence with the plurality of electrode regions and configured to be coupled in parallel with the first electrode layer, a resistance of each auxiliary electrode is inversely correlated with a minimum distance from the electrode region corresponding to said each auxiliary electrode to the signal output part. The present disclosure further provides a display panel and a manufacturing method thereof and a display device.

Abstract: A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: Provided herein are KRAS G12C inhibitors, composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: A mapping table updating method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving, a plurality of operation commands from a host system; performing a first table updating operation according to a first operation command and a third operation command among the operation commands to read and update a first sub-mapping table and a third sub-mapping table from a rewritable non-volatile memory module; and after the first table updating operation is finished, performing a second table updating operation according to a second operation command among the operation commands to read and update a second sub-mapping table from the rewritable non-volatile memory module.

Abstract: A display substrate having a plurality of subpixels is provided. A respective one of the plurality of subpixels includes a light emitting element; a first thin film transistor configured to driving light emission of the light emitting element; and a light emitting brightness value detector. The light emitting brightness value detector includes a second thin film transistor; and a photosensor electrically connected to the second thin film transistor and configured to detect a light emitting brightness value. The display substrate further includes a silicon organic glass layer on a side of at least one of the first thin film transistor or the second thin film transistor away from a base substrate; and the photosensor is on a side of the silicon organic glass layer away from the base substrate.

Abstract: A mason jar seal device is provided. The mason jar sealing device includes a first container body. The first container body comprises a first container part, a first container wall surrounding the first container part and extending from the first container part, a partition coupled to an inner side of the first container wall and spaced apart from the first container part, a first barrel wall coupled with the partition for forming a first air-extraction port together with the partition, and a second barrel wall disposed on a side of the first barrel wall away from the partition for forming a second air-extraction port for communicating with the first air-extraction port. The first air-extraction port and the second air-extraction port are configured to seal different sizes of mason jars.

Abstract: A support base includes a connector hub having a top end, a bottom end spaced apart from the top end, and a chamber wall extending between the top and bottom ends. The chamber wall defines a chamber within the connector hub. An interface may be positioned in the chamber. The interface is dimensioned such that a support gap is formed between the interface and the chamber wall. The support gap may be dimensioned for receiving a wall of a support structure having a hollow interior into which the interface is received.

Abstract: A display substrate, a manufacturing method thereof, and a display panel. The display substrate includes a base, a first electrode, a first auxiliary cathode, a second electrode and a second auxiliary cathode, a pixel definition layer and a cathode. The first and second electrodes are located in the display area and the first and second auxiliary cathodes are located in the non-emitting area. The orthogonal projections of the first auxiliary cathode and the second auxiliary cathode on the base are in a mesh structure. The pixel definition layer is at least located in the non-emitting area. The cathode at least covers the display area and the cathode is arranged on one side of the pixel definition layer far away from the base; wherein the cathode, the first auxiliary cathode and the second auxiliary cathode are electrically connected.

Abstract: The present disclosure provides a method, device, and electronic device for controlling 3D printing. The method comprises: controlling a 3D printing device to print based on the preset printing parameters by a preset printing control strategy to obtain printing results; monitoring the printing environment, printing structure, and the printing results by a monitor to obtain the corresponding monitoring information; adjusting the preset printing parameters based on the monitoring information by a printing feedback control strategy to obtain adjusted results of the printing parameters; time-programing the printing results to position printing based on the monitoring information using a spatiotemporal recombination control strategy to obtain printing results of spatiotemporal positioning control.

Abstract: The present invention relates to the pharmaceutical and biological field, and discloses a single-domain antibody against coagulation factor XI (FXI) and derived protein thereof. In particular, the present invention discloses a coagulation factor XI (FXI) binding protein derived from a single-domain antibody against coagulation factor XI (FXI) and use thereof.

Abstract: The invention provides a method for forming a semiconductor structure, which comprises providing a substrate, sequentially a first groove and a second groove are formed in the substrate, the depth of the first groove is different from the depth of the second groove, a first oxide layer is formed in the first groove, a second oxide layer is formed in the second groove, an etching step is performed to remove part of the first oxide layer, a first gate structure is formed on the first oxide layer, and a second gate structure is formed on the second oxide layer.

Abstract: A shift register, a gate driving circuit, and a display panel. The shift register includes a first input module, a second input module, a first output module, a second output module, a first output control module, and a second output control module, where the first input module is configured to control the potential of a first node according to a first start signal and a first clock signal, the second input module is configured to control the potential of a second node according to a second start signal and the first clock signal, and the second start signal and the first start signal have opposite potentials; the first output module includes a first coupling unit configured to couple the potential of a third node according to the potential of a first output terminal in the case where the potential of the first output terminal jumps.

Abstract: A semiconductor structure includes a substrate having a first device region and a second device region in proximity to the first device region. A first trench isolation structure is disposed in the substrate between the first device region and the second device region. The first trench isolation structure includes a first bottom surface within the first device region and a second bottom surface within the second device region. The first bottom surface is lower than the second bottom surface. The first trench isolation structure includes a first top surface within the first device region and a second top surface within the second device region. The first top surface is coplanar with the second top surface.