Abstract: An organic light-emitting diode (OLED) display substrate, a manufacturing method thereof and a display panel are provided. The OLED display substrate has pixel regions and includes a base substrate and a pixel defining layer disposed on the base substrate; in regions of the pixel defining layer corresponding to the pixel regions, accommodation parts penetrating the pixel defining layer are disposed, and the pixel defining layer is further provided with guide parts disposed corresponding to the accommodation parts, the guide parts are located on a periphery of the corresponding accommodation parts and formed by recessed areas which are formed on a side of the pixel defining layer away from the base substrate, the recessed areas do not penetrate the pixel defining layer, and an orthographic projection of the guide part on the base substrate is directly coupled to an orthographic projection of the corresponding accommodation part on the base substrate.

Abstract: A memory control method, a memory storage device and a memory control circuit unit are provided. The method includes: setting preset read count thresholds corresponding to physical erasing units respectively; in a background operation, in response to a read count of a first physical erasing unit in the physical erasing units being greater than its corresponding preset read count threshold, reading word lines in the first physical erasing unit to obtain first error bit amounts; determining whether a refresh operation needs to be performed on the first physical erasing unit according to first error bit amounts; in response to no need to perform the refresh operation on the first physical erasing unit, selecting a first word line with the largest first error bit amount in the word lines, and detecting a voltage distribution variation of the first word line; and calculating a new read count threshold of the first physical erasing unit according to the voltage distribution variation.

Abstract: A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Abstract: Systems, apparatuses, and methods for implementing a centralized interrupt controller to aggregate interrupts generated across multiple semiconductor dies are disclosed. A system includes multiple interrupt sources on multiple semiconductor dies. A centralized interrupt controller on one of the semiconductor dies receives and aggregates interrupts from the multiple interrupt sources on the multiple semiconductor dies. This facilitates a single transmission point for forwarding the interrupts to the processor and operating system responsible for handling interrupts. Each interrupt source embeds an ID when conveying an interrupt to the interrupt controller. This allows the interrupt controller to differentiate between the interrupt sources and to identify which source generated a given interrupt. The interrupt controller conveys an indication of the source of the interrupt to the processor when forwarding the interrupt to the processor.

Abstract: Claudin 18.2 T cell antigen couplers (TACs) polypeptides having (i) an antigen-binding domain that binds Claudin 18.2, (ii) an antigen-binding domain that binds a protein associated with a TCR complex, and (iii) a T cell receptor signaling domain polypeptide are provided.

Abstract: A semiconductor structure includes a substrate having a first device region and a second device region in proximity to the first device region. A trench isolation structure is disposed in the substrate between the first device region and the second device region. The trench isolation structure includes a first bottom surface within the first device region and a second bottom surface within the second device region. The first bottom surface is coplanar with the second bottom surface.

Abstract: Systems, apparatuses, and methods for implementing duplicated registers for access by initiators across multiple semiconductor dies are disclosed. A system includes multiple initiators on multiple semiconductor dies of a chiplet processor. One of the semiconductor dies is the master die, and this master die has copies of registers which can be accessed by the multiple initiators on the multiple semiconductor dies. When a given initiator on a given secondary die generates a register access, the register access is routed to the master die and a particular duplicate copy of the register maintained for the given secondary die. From the point of view of software, the multiple semiconductor dies appear as a single die, and the multiple initiators appear as a single initiator. Multiple types of registers can be maintained by the master die, with a flush register being one of the register types.

Abstract: A rotary compressor and a refrigeration cycle device are provided. The rotary compressor includes a housing, an exhaust pipe and a suction pipe. The housing accommodates a motor and a compression mechanism. The exhaust pipe is communicated with a high-pressure side of the refrigeration cycle device and coupled to the housing. The suction pipe is communicated with a low-pressure side of the refrigeration cycle device and coupled to the compression mechanism. The compression mechanism has a bypass device. When the motor is stopped, gas of the housing flows into the suction pipe or a low-pressure circuit communicated with the suction pipe.

Abstract: A recycled material based on in-situ compatibilization and chain extension is mainly prepared from the following raw materials in parts by mass: 30-70 parts of waste HIPS, 30-70 parts of waste PP, 2-6 parts of POE, 0.1-0.4 part of an alkylation reaction catalyst, 0.1-0.3 part of a co-catalyst, and 2-8 parts of a macromolecular chain extender. Further, a preparation method for the recycled material based on in-situ compatibilization and chain extension is provided.

Abstract: Provided are keratin BD-4, an encoding nucleic acid molecule thereof, an expression vector, a host cell, and a pharmaceutical composition containing the keratin. The keratin BD-4 can be used for preparing drugs having antipyretic and analgesic, antitussive and expectorant, and antiepileptic effects.

Abstract: Semiconductor device and method of fabricating the same, the semiconductor device includes a substrate, a first transistor, a second transistor, a third transistor, and a plurality of shallow trench isolations. The first transistor is disposed in a medium-voltage region and includes a first plane, a first gate dielectric layer, and a first gate electrode. The second transistor is disposed in a boundary region and includes a second plane, a second gate dielectric layer, and a second gate electrode. The third transistor is disposed in a lower-voltage region and includes a third plane, a third gate dielectric layer, and a third gate electrode. The shallow trench isolations are disposed in the substrate, wherein top surfaces of the shallow trench isolations in the medium-voltage region, the boundary region and the low-voltage region are coplanar with top surfaces of the first gate dielectric layer and the second gate dielectric layer.

Abstract: A mapping table updating method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving, a plurality of operation commands from a host system; performing a first table updating operation according to a first operation command and a third operation command among the operation commands to read and update a first sub-mapping table and a third sub-mapping table from a rewritable non-volatile memory module; and after the first table updating operation is finished, performing a second table updating operation according to a second operation command among the operation commands to read and update a second sub-mapping table from the rewritable non-volatile memory module.

Abstract: Provided herein are KRAS G12C inhibitors, such as composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Abstract: The present disclosure provides a display substrate, including: a base substrate, which includes a display region and a driving region arranged on at least one side of the display region; a first electrode layer disposed in the display region; a signal output part disposed in the driving region, the first electrode layer is electrically coupled to the signal output part, the first electrode layer comprises a plurality of electrode regions each having a same area; and a plurality of auxiliary electrodes, which are in one-to-one correspondence with the plurality of electrode regions and configured to be coupled in parallel with the first electrode layer, a resistance of each auxiliary electrode is inversely correlated with a minimum distance from the electrode region corresponding to said each auxiliary electrode to the signal output part. The present disclosure further provides a display panel and a manufacturing method thereof and a display device.

Abstract: A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Abstract: Provided herein are KRAS G12C inhibitors, composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: A mapping table updating method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving, a plurality of operation commands from a host system; performing a first table updating operation according to a first operation command and a third operation command among the operation commands to read and update a first sub-mapping table and a third sub-mapping table from a rewritable non-volatile memory module; and after the first table updating operation is finished, performing a second table updating operation according to a second operation command among the operation commands to read and update a second sub-mapping table from the rewritable non-volatile memory module.

Abstract: A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Abstract: A display substrate having a plurality of subpixels is provided. A respective one of the plurality of subpixels includes a light emitting element; a first thin film transistor configured to driving light emission of the light emitting element; and a light emitting brightness value detector. The light emitting brightness value detector includes a second thin film transistor; and a photosensor electrically connected to the second thin film transistor and configured to detect a light emitting brightness value. The display substrate further includes a silicon organic glass layer on a side of at least one of the first thin film transistor or the second thin film transistor away from a base substrate; and the photosensor is on a side of the silicon organic glass layer away from the base substrate.