Abstract: A semiconductor package structure includes a semiconductor die having an active surface, a conductive bump electrically coupled to the active surface, and a dielectric layer surrounding the conductive bump. The conductive bump and the dielectric layer form a planar surface at a distal end of the conductive bump with respect to the active surface. The distal end of the conductive bump is wider than a proximal end of the conductive bump with respect to the active surface.

Abstract: A semiconductor device package includes a circuit layer, an electronic component, an electronic component, a first passivation layer and a second passivation layer. The circuit layer has a first surface. The electronic component is disposed on the first surface of the circuit layer. The first passivation layer is disposed on the first surface of the circuit layer. The first passivation layer has a first surface facing away the circuit layer. The second passivation layer is disposed on the first surface of the first passivation layer. The second passivation layer has a second surface facing away the circuit layer. A uniformity of the first surface of the first passivation layer is greater than a uniformity of the second surface of the second passivation layer.

Abstract: A substrate structure is provided. The substrate structure includes a substrate, a first redistribution structure, a first adhesive layer and a first connecting component. The substrate includes a first conductor on a first surface thereof. The first redistribution structure is disposed over the substrate. The first adhesive layer is disposed between the substrate and the first redistribution structure. The first connecting component is electrically connected with the first conductor, penetrates through the first adhesive layer into the first redistribution structure, and electrically connects the substrate to the first redistribution structure.

Abstract: A substrate panel structure includes a plurality of sub-panels and a dielectric portion. Each of the sub-panels includes a plurality of substrate units. The dielectric portion is disposed between the sub-panels.

Abstract: A semiconductor packaging device includes a first patterned insulation layer, a patterned conductive layer, a semiconductor device and an encapsulant. The first patterned insulation layer has a first surface, a second surface opposite the first surface, and an island portion having the first surface. The first patterned insulation layer defines a tapered groove surrounding the island portion. The patterned conductive layer is disposed on the first surface of the island portion. The semiconductor device electrically connects to the patterned conductive layer. The encapsulant encapsulates the semiconductor device, the first patterned insulation layer and the patterned conductive layer.

Abstract: An interconnection structure includes a first dielectric layer and a second dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer has a first surface and a second surface, both facing toward the first dielectric layer. The first surface of the second dielectric layer is recessed from the second surface of the second dielectric layer and defines a recess. A portion of the first dielectric layer is disposed within the recess.

Abstract: Disclosed is a diagnostic panel of methylated genomic loci encoding microRNA (mgmiR) markers that demonstrated 90% sensitivity and 100% specificity in the detection of head and neck squamous cell carcinoma (HNSCC). These results represent the first use of quantitative MS-PCR for the detection of mgmiRs. In addition, this panel demonstrates the ability to detect hypermethylation in the adjacent mucosa of cancer patients, suggesting its utility in early detection. This panel is also capable of detecting cancer by using saliva, blood and FNA tissue samples.

Abstract: The present invention provides compositions and methods of their use in treating muscular dystrophy and other disorders.

Abstract: Pesticidally active polycyclic derivatives with 5-membered sulfur containing heterocyclic ring systems of formula (I), wherein the substituents are as defined in claim 1, and the agrochemically acceptable salts salts, stereoisomers, enantiomers, tautomers and N-oxides of those compounds, can be used as insecticides and can be prepared in a manner known per se.

Abstract: A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

Abstract: A semiconductor device package is provided, which includes a substrate, a semiconductor device and an alignment structure. The semiconductor device and the alignment structure are disposed on the substrate. The alignment structure is in direct contact with the semiconductor device.

Abstract: A semiconductor trace structure is provided for carrying a heat source. The semiconductor device package includes a dielectric structure having a first surface configured to receive the heat source and a second surface opposite to the first surface; a cavity defined by the dielectric structure to accommodate a fluid. The cavity includes a first passage portion between the first surface and the second surface. A first area of the first passage portion is closer to the heat source than a second area of the first passage portion, and that the first area is greater than the second area from a top view perspective. A method for manufacturing the semiconductor trace structure is also provided.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package comprises a carrier, a first patterned conductive layer, an interconnection structure, a first semiconductor device, an encapsulant, a second patterned conductive layer, and a passivation layer. The carrier has a first surface and a second surface opposite to the first surface. The first patterned conductive layer is adjacent to the first surface of the carrier. The interconnection structure is disposed on the first patterned conductive layer and electrically connected to the first patterned conductive layer. The first semiconductor device is disposed on the interconnection structure and electrically connected to the interconnection structure. The encapsulant is disposed on the first patterned conductive layer and encapsulates the semiconductor device and the interconnection structure.

Abstract: A semiconductor package device includes a first conductive structure, a second conductive structure and a dielectric layer. The first conductive structure has a tapered portion. The second conductive structure surrounds the tapered portion of the first conductive structure and is in direct contact with a side wall of the tapered portion of the first conductive structure. The dielectric layer surrounds the tapered portion of the first conductive structure and is in direct contact with the side wall of the tapered portion of the first conductive structure.

Abstract: A semiconductor device package includes an interposer and a semiconductor device. The interposer has a sidewall defining a space. The semiconductor device is disposed within the space and in contact with the sidewall. An interposer includes a first surface, a second surface and a third surface. The first surface has a first crystal orientation. The second surface is opposite the first surface and has the first crystal orientation. The third surface connects the first surface to the second surface, and defines a space. An angle defined by the third surface and the first surface ranges from about 90° to about 120°.

Abstract: A semiconductor device package includes an electronic component, a first set of conductive wires electrically connected to the electronic component, and an insulation layer surrounding the first set of conductive wires. The insulation layer exposes a portion of the first set of the conductive wires. The insulation layer is devoid of a filler.

Abstract: The present invention provides compositions and methods of their use in treating muscular dystrophy and other disorders.

Abstract: A semiconductor device package includes an electronic component, a first substrate, a first bonding wire and a second substrate. The electronic component has a first surface. The first substrate is disposed on the first surface of the electronic component. The first bonding wire electrically connects the first substrate to the electronic component. The second substrate is disposed on the first surface of the electronic component. The second substrate defines an opening accommodating the first substrate and the first bonding wire.

Abstract: A semiconductor device package includes a dielectric layer, a first conductive pattern and a first semiconductor device. The dielectric layer has a first surface, wherein a surface uniformity of the first surface is substantially equal to or less than 5%. The first conductive pattern is disposed on the first surface of the dielectric layer, wherein the first conductive pattern includes a first conductive trace, and a line width of the first conductive trace substantially ranges from about 0.5 ?m and about 2 ?m. The first semiconductor device is disposed on the first surface of the dielectric layer and electrically connected to the first conductive pattern.

Abstract: An electrical device includes a substrate and a via. The substrate has a first surface and defines a recess in the first surface. The via is disposed in the recess. The via includes an insulation layer, a first conductive layer and a second conductive layer. The insulation layer is disposed on the first surface of the substrate and extends at least to a sidewall of the recess. The first conductive layer is disposed adjacent to the insulation layer and extends over at least a portion of the first surface. The second conductive layer is disposed adjacent to the first conductive layer and extends over at least a portion of the first surface. The second conductive layer has a negative coefficient of thermal expansion (CTE).