Patents by Inventor Long Nguyen

Long Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6527819
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: March 4, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20030040447
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Application
    Filed: June 25, 2002
    Publication date: February 27, 2003
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6492310
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: December 10, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Publication number: 20020147018
    Abstract: An improved RF channel management scheme is described. In accordance with this scheme, decisions regarding whether to reserve or release a channel in a hold state are based upon system usage and configuration information. By this approach, the communication capacity of a wireless telephone system may be optimized for individual wireless communication environments. In one embodiment, whether an RF channel in a hold state is released or reserved is determined based, at least in part, upon a count of unused RF channels available to the wireless telephone system. In another embodiment, whether an RF channel in a hold state is released or reserved is determined based, at least in part, upon a class of service identifier assigned to a wireless telephone holding an RF channel in a hold state.
    Type: Application
    Filed: February 21, 2001
    Publication date: October 10, 2002
    Applicant: SIEMENS INFORMATION AND COMMUNICATION PRODUCTS, LLC
    Inventors: Elie Jreij, James S. Umstetter, Long Nguyen
  • Publication number: 20020132744
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: December 5, 2001
    Publication date: September 19, 2002
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Dave Bernhard, Long Nguyen
  • Publication number: 20020124474
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: December 18, 2001
    Publication date: September 12, 2002
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20020081865
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: December 18, 2001
    Publication date: June 27, 2002
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Patent number: 6409781
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: May 1, 2000
    Date of Patent: June 25, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20020065204
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: November 15, 2001
    Publication date: May 30, 2002
    Inventors: William A. Wojtczak, David Bernhard, Long Nguyen
  • Patent number: 6383410
    Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: May 7, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Long Nguyen, Stephen A. Fine
  • Publication number: 20020043644
    Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.
    Type: Application
    Filed: August 8, 2001
    Publication date: April 18, 2002
    Inventors: William A. Wojtczak, Long Nguyen, Stephen A. Fine
  • Patent number: 6344432
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: February 5, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Publication number: 20020013238
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: December 8, 2000
    Publication date: January 31, 2002
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Publication number: 20010050350
    Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: March 27, 2001
    Publication date: December 13, 2001
    Applicant: Advanced Technology Materials Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Patent number: 6311182
    Abstract: A voice activated and operated Internet web browser where voiced utterances are digitized and the digitized representation is input to a speech recognition program is disclosed. The speech recognition program determines the most likely set of words from a stored vocabulary making up the utterances. The words are analyzed and searched against a database of topics or micro-domain areas. If a match occurs the words are analyzed by a subprogram associated with the specific topic area and key words are identified and other words discarded. The key words are input to a search engine or the equivalent. The search engine returns information associated with the topic. If no topic match is found a general search on the recognized words is performed. The recognized words are fed to a identification module where key words are extracted that are associated with names of people, organizations, locations, and companies; times; money amounts; percentages; dates; and not-a-name.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: October 30, 2001
    Assignees: Genuity Inc., GTE Service Corporation
    Inventors: Sean C. Colbath, David Stallard, Cecile Pham, Long Nguyen
  • Patent number: 6306807
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: October 23, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6280651
    Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.
    Type: Grant
    Filed: December 16, 1998
    Date of Patent: August 28, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Long Nguyen, Stephen A. Fine
  • Patent number: 6271986
    Abstract: Devices, systems, and methods prevent rigid recording media for video and other data from rattling within a cartridge when that cartridge is removed from a disk drive. To decrease rattling (and the resulting damage to the disk), a hub of the disk is urged against an inner surface of the cartridge housing. A door translates laterally to provide access to the disk within the cartridge. A feature is defined by an inner surface of the cartridge housing, and one or more resilient arms extend from the door assembly so as to engage the feature when the door moves towards a closed position. The feature deflects the arm axially against the disk, so that the arm can act as both an actuation mechanism and a biasing spring.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: August 7, 2001
    Assignee: Castlewood Systems, Inc.
    Inventors: Albert Guerini, Syed H. Iftikar, Frank Morris, Long Nguyen
  • Publication number: 20010008878
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Application
    Filed: March 7, 2001
    Publication date: July 19, 2001
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6188545
    Abstract: Methods and apparatus for increasing the reliability of removable storage media by dynamically reducing particulate contaminants from magnetic disks. The apparatus and methods include using wipers which slidingly engage both sides of the magnetic disk as the disk rotates, in order to reduce particulates. In some embodiments, the wiper can be coupled to a swing-type actuator or to any resilient member which can be moved over the surface of the magnetic disk.
    Type: Grant
    Filed: July 23, 1999
    Date of Patent: February 13, 2001
    Assignee: Castlewood Systems, Inc.
    Inventors: Long Nguyen, Venkat R. Koka, Frank Morris, Syed Iftikar