Patents by Inventor Long Nguyen

Long Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050237663
    Abstract: One embodiment of the present invention is an insulator that includes a pocket feature adapted to accommodate at least a portion of one or more components disposed on a printed circuit board.
    Type: Application
    Filed: April 18, 2005
    Publication date: October 27, 2005
    Applicant: Riospring, Inc.
    Inventor: Long Nguyen
  • Publication number: 20050215446
    Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: May 24, 2005
    Publication date: September 29, 2005
    Inventors: William Wojtczak, Ma. Seijo, David Bernhard, Long Nguyen
  • Publication number: 20050208792
    Abstract: A bending tool for bending a flexible printed circuit assembly including: a base; a first bender, supported by the base, having a first bending tip adapted to bend a first portion of the flexible printed circuit assembly; and a second bender, supported by the base, having a second bending tip adapted to bend a second portion of the flexible printed circuit assembly.
    Type: Application
    Filed: March 15, 2005
    Publication date: September 22, 2005
    Applicant: Riospring, Inc.
    Inventors: Long Nguyen, Giao Duong
  • Patent number: 6936542
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: August 30, 2005
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20050124517
    Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: January 24, 2005
    Publication date: June 9, 2005
    Inventors: William Wojtczak, Ma. Seijo, David Bernhard, Long Nguyen
  • Patent number: 6896826
    Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: October 23, 2001
    Date of Patent: May 24, 2005
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Publication number: 20050029395
    Abstract: A weapons system is disclosed that provides hot-start navigational information to the Global-Positioning-System receivers on missiles prior to flight. The system comprises a Global-Positioning-System receiver that uses a classified red cryptographic key to decode the P(Y) signal from one or more of the Global-Positioning-System constellation of satellites. Once the P(Y) signal is decoded, one or more characteristics (e.g., the PRN code synchronization, the Doppler shift, the modulation bit sequence, etc.) of the signal is derived. These characteristics of the signal—and some other information including a black cryptographic key that comprises the red cryptographic key—are then provided to the Global-Positioning-System receivers on missiles prior to flight. By giving the missiles this information, the missiles are able to acquire the P(Y) signals themselves more quickly than they otherwise could, which enables them to determine their position more quickly than they otherwise could.
    Type: Application
    Filed: June 30, 2004
    Publication date: February 10, 2005
    Inventors: Donald Anderson, Richard Anthony, Long Nguyen
  • Publication number: 20050003674
    Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: June 4, 2004
    Publication date: January 6, 2005
    Inventors: William Wojtczak, Ma Seijo, David Bernhard, Long Nguyen
  • Publication number: 20040193865
    Abstract: A method for securely updating a basic input/output system (BIOS) using a multi-layer scheme. A new BIOS image is received and stored at a computer system. In one embodiment, the new BIOS image is sent to the computer system in a BIOS capsule that also contains the data structure and instructions of how to build a new BIOS image for the computer system.
    Type: Application
    Filed: March 24, 2003
    Publication date: September 30, 2004
    Inventors: Tom Long Nguyen, Ling Yee Sy
  • Patent number: 6772307
    Abstract: A BIOS memory including multiple memory blocks, with two or more memory blocks of the multiple memory blocks configured to store boot code.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: August 3, 2004
    Assignee: Intel Corporation
    Inventors: Tom Long Nguyen, Mallik Bulusu
  • Patent number: 6755989
    Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: March 27, 2001
    Date of Patent: June 29, 2004
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Patent number: 6660700
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: November 15, 2001
    Date of Patent: December 9, 2003
    Assignee: Advanced Technologies Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Patent number: 6618726
    Abstract: A voice activated and operated Internet web browser where voiced utterances are digitized and the digitized representation is input to a speech recognition program is disclosed. The speech recognition program determines the most likely set of words from a stored vocabulary making up the utterances. The words are analyzed and searched against a database of topics or micro-domain areas. If a match occurs the words are analyzed by a subprogram associated with the specific topic area and key words are identified and other words discarded. The key words are input to a search engine or the equivalent. The search engine returns information associated with the topic. If no topic match is found a general search on the recognized words is performed. The recognized words are fed to a identification module where key words are extracted that are associated with names of people, organizations, locations, and companies; times; money amounts; percentages; dates; and not-a-name.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: September 9, 2003
    Assignees: Genuity Inc., Verizon Corporate Services Group Inc.
    Inventors: Sean C. Colbath, David Stallard, Cecile Pham, Long Nguyen
  • Patent number: 6599870
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: July 29, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6566315
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: May 20, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Dave Bernhard, Long Nguyen
  • Publication number: 20030078173
    Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.140% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: October 23, 2001
    Publication date: April 24, 2003
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Patent number: 6527819
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: March 4, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20030040447
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Application
    Filed: June 25, 2002
    Publication date: February 27, 2003
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6492310
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: December 10, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Publication number: 20020147018
    Abstract: An improved RF channel management scheme is described. In accordance with this scheme, decisions regarding whether to reserve or release a channel in a hold state are based upon system usage and configuration information. By this approach, the communication capacity of a wireless telephone system may be optimized for individual wireless communication environments. In one embodiment, whether an RF channel in a hold state is released or reserved is determined based, at least in part, upon a count of unused RF channels available to the wireless telephone system. In another embodiment, whether an RF channel in a hold state is released or reserved is determined based, at least in part, upon a class of service identifier assigned to a wireless telephone holding an RF channel in a hold state.
    Type: Application
    Filed: February 21, 2001
    Publication date: October 10, 2002
    Applicant: SIEMENS INFORMATION AND COMMUNICATION PRODUCTS, LLC
    Inventors: Elie Jreij, James S. Umstetter, Long Nguyen