Abstract: An integrated circuit (IC), random access memory on an IC and method of neutralizing device floating body effects. A floating body effect monitor monitors circuit/array activity and selectively provides an indication of floating body effect manifestation from inactivity, including the lapse of time since the most recent activity or memory access. A pulse generator generates a neutralization pulse in response to an indication of inactivity. A neutralization pulse distribution circuit passes the neutralization pulse to blocks in the circuit path or to array cells.

Abstract: A method and system are disclosed herein for determining optimum power level settings for a transmitter and receiver pair of a communication system having a plurality of transmitter and receiver pairs, as determined with respect to bit error rate. In the method disclosed herein, the power levels of a transmitter and a receiver pair coupled to communicate over a duplex communication link are set to initial values. The bit error rate is then determined over the link. Then, the power level of the transmitter, the receiver, or both, is altered, incrementally, and the effect upon the bit error rate is determined. When an improvement appears in the bit error rate at an altered power level, the power level of the transmitter, the receiver or both, are set to the altered power level at which the improvement is found.

Abstract: A data transmitter and transmitting method are provided in which an adaptive finite impulse response (FIR) driver has a plurality of taps to which coefficients having updateable values are applied. The FIR driver has a transfer function between an input stream of data bits and an output stream of data bits such that each data bit output from the FIR driver has an amplitude adjusted as a function of the values of a plurality of data bits of the input stream, and the values of the coefficients. The data transmitter includes a rewriteable non-volatile storage, operable to be rewritten with control information representing the values of the coefficients updated during operation of the FIR driver.

Abstract: A method and structure for an integrated chip structure comprises a substrate having a power supply, a chip attached to the substrate, at least two decoupling capacitors attached to the chip and to the power supply, and a control circuit adapted to select physical locations of active decoupling capacitors to be interspersed with inactive decoupling capacitors. The invention selectively connects and disconnects the decoupling capacitors to and from the power supply, such that the inactive decoupling capacitors provide a uniform heat dissipation function across the chip and the active decoupling capacitors provide a uniform power regulation function across the chip.

Abstract: A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insulating layer, a dielectric layer formed in the first opening, a conductive material deposited in the first and second openings, and a first metal plate formed over the first opening and a second metal plate formed over the second opening. A method for fabricating the MIM capacitor, includes forming the first metal layer, forming the insulating layer on the first metal layer, forming at least the first opening and at least the second opening in the first insulating layer, depositing a mask over the second opening, forming the dielectric layer in the first opening, removing the mask, depositing the conductive material in the first and second openings, and depositing a second metal layer over the first and second openings.

Abstract: A method and structure for an integrated circuit chip has a logic core which includes a plurality of insulating and conducting levels, an exterior conductor level and passive devices having a conductive polymer directly connected to the exterior conductor level. The passive devices contain RF devices which also includes resistor, capacitor, and/or inductor. The resistors can be serpentine resistors and the capacitors can be interdigitated capacitors.

Abstract: The invention provides a simple interface circuit between a large capacity, high speed DRAM and a single port SRAM cache to achieve fast-cycle memory performance. The interface circuit provides wider bandwidth internal communications than external data transfers. The interface circuit schedules parallel pipeline operations so that one set of data buses can be shared in cycles by several data flows to save chip area and alleviate data congestion. A flexible design is provided that can be used for a range of bandwidths of data transfer and generally any size bandwidth ranging from 32 to 4096 bits wide can use this same approach.

Abstract: Methods and structures are disclosed herein for programmably adjusting a peaking function of a differential signal receiver. The disclosed method includes inputting a pair of differential signals to a pair of input transistors coupled to conduct currents differentially between a pair of load impedances and a pair of tail transistors. The impedance of an adjustable shunt impedance element between the tail transistors of the receiver is varied by programming signal input, such that higher current is conducted over a peaking range of frequencies. In a disclosed structural embodiment, an integrated circuit is provided having a programmable peaking receiver. The programmable peaking receiver includes a pair of input transistors coupled to conduct differentially according to a pair of differential inputs applied to the pair of input transistors. Each of the input transistors produces an output in accordance with the differential input applied thereto.

Abstract: A method and structure for a transistor device comprises forming a source, drain, and trench region in a substrate, forming a first insulator over the substrate, forming a gate electrode above the first insulator, forming a pair of insulating spacers adjoining the electrode, converting a portion of the first insulator into a metallic film, converting the metallic film into one of a silicide and a salicide film, forming an interconnect region above the trench region, forming an etch stop layer above the first insulator, the trench region, the gate electrode, and the pair of insulating spacers, forming a second insulator above the etch stop layer, and forming contacts in the second insulator. The first insulator comprises a metal oxide material, which comprises one of a HfOx and a ZrOx.

Abstract: Methods for designing a 6T SRAM cell having greater stability and/or a smaller cell size are provided. A 6T SRAM cell has a pair access transistors (NFETs), a pair of pull-up transistors (PFETs), and a pair of pull-down transistors (NFETs), wherein the access transistors have a higher threshold voltage than the pull-down transistors, which enables the SRAM cell to effectively maintain a logic “0” during access of the cell thereby increasing the stability of the cell, especially for cells during “half select.” Further, a channel width of a pull-down transistor can be reduced thereby decreasing the size of a high performance six transistor SRAM cell without effecting cell the stability during access. And, by decreasing the cell size, the overall design layout of a chip may also be decreased.

Abstract: A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.

Abstract: Described is a method for making silicon on sapphire structures, and devices therefrom. The inventive method of forming integrated circuits on a sapphire substrate comprises the steps of providing a device layer on an oxide layer of a temporary substrate; bonding the device layer to a handling substrate; removing the temporary substrate to provide a structure containing the device layer between the oxide layer and the handling substrate; bonding a sapphire substrate to the oxide layer; removing the handling substrate from the structure; and annealing the final structure to provide a substrate comprising the oxide layer between the device layer and the sapphire substrate. The sapphire substrate may comprise bulk sapphire or may be a conventional substrate material with an uppermost sapphire layer.

Abstract: A system and method for generating random noise for use in testing electronic devices comprises a first random pattern generator circuit for generating first sets of random bit pattern signals; one or more delay devices each receiving a trigger input signal and a random bit pattern signal set for generating in response a respective delay output signal, each delay output signal being delayed in time with respect to a respective trigger signal, a delay time being determined by the bit pattern set received; and, an oscillator circuit device associated with a respective one or more delay devices for receiving a respective delay output signal therefrom and generating a respective oscillating signal, each oscillator signal generated being used to generate artificial random noise for emulating a real noise environment in an electronic device.

Abstract: A method and structure for a metal oxide semiconductor transistor having a substrate, a well region in the substrate, source and drain regions on opposite sides of the well region in the substrate, a gate insulator over the well region of the substrate, a polysilicon gate conductor over the gate insulator, and metallic spacers on sides of the gate conductor.

Abstract: A T-RAM array having a plurality of T-RAM cells is presented where each T-RAM cell has dual devices. Each T-RAM cell is planar and has a buried vertical thyristor and a horizontally stacked pseudo-TFT transfer gate. The buried vertical thyristor is located beneath the horizontally stacked pseudo-TFT transfer gate. A method is also presented for fabricating the T-RAM array having the buried vertical thyristors, the horizontally stacked pseudo-TFT transfer gates and the planar cell structure.

Abstract: An apparatus and method is provided for detecting loss of differential signal carried by a pair of differential signal lines. According to the method, a common mode level is detected from voltages on the pair of differential signal lines. A threshold level is generated, referenced to the detected common mode level. A signal level is generated from the voltages on the pair of differential signal lines, the signal level being averaged over a first period of time. From the threshold level and the detected common mode level a reference level is generated, the reference level being averaged over a second period of time longer than then the first period of time. The signal level is compared to the reference level to determine if a signal is present on the pair of differential signal lines.

Abstract: A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is insensitive to supply voltage and a variation in the chip temperature. The power consumption of both circuits, i.e., the band-gap reference and the temperature sensor circuits, encompassing the combined sensor circuit is less than one ?W. The combined sensor circuit can be used to monitor local or global chip temperature. The result can be used to (1) regulate DRAM array refresh cycle time, e.g., the higher the temperature, the shorter the refresh cycle time, (2) to activate an on-chip or off-chip cooling or heating device to regulate the chip temperature, (3) to adjust internally generated voltage level, and (4) to adjust the CPU (or microprocessor) clock rate, i.e., frequency, so that the chip will not overheat.

Abstract: A unified SRAM cache system is provided incorporated several SRAM macros of an embedded DRAM (eDRAM) system and their functions. Each incorporated SRAM macro can be independently accessed without interfering with the other incorporated SRAM macros within the unified SRAM cache system. The incorporated SRAM macros share a single set of support circuits, such as row decoders, bank decoders, sense amplifiers, wordline drivers, bank pre-decoders, row pre-decoders, I/O drivers, multiplexer switch circuits, and data buses, without compromising the performance of the eDRAM system.

Abstract: A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure.

Abstract: A method and apparatus for adjusting capacitance of an on-chip capacitor uses exposure of a dielectric material of the capacitor to an ion beam comprising ions of at least one material to modify a dielectric constant of the dielectric material.