Patents by Inventor Lucian Shifren

Lucian Shifren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CORRELATED ELECTRON SWITCH PROGRAMMABLE FABRIC
    Publication number: 20190348116
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Application
    Filed: July 29, 2019
    Publication date: November 14, 2019
    Inventors: Lucian Shifren, Greg Yeric, Saurabh Sinha, Brian Cline, Vikas Chandra
  • FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTRON MATERIAL (CEM)
    Publication number: 20190334086
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.
    Type: Application
    Filed: July 1, 2019
    Publication date: October 31, 2019
    Inventors: Glen Arnold Rosendale, Lucian Shifren
  • Controlling dopant concentration in correlated electron materials
    Patent number: 10454026
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: October 22, 2019
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric
  • Correlated electron switch structures and applications
    Patent number: 10446609
    Abstract: Subject matter disclosed herein may relate to devices formed from correlated electron material.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: October 15, 2019
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric
  • FORMATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICE VIA DOPANT DEPOSITION AND ANNEAL
    Publication number: 20190305219
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 3, 2019
    Inventors: Lucian Shifren, Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams
  • Method, system and device for non-volatile memory device operation
    Patent number: 10431304
    Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: October 1, 2019
    Assignee: ARM Ltd.
    Inventors: Azeez Jennudin Bhavnagarwala, Vivek Asthana, Piyush Agarwal, Akshay Kumar, Lucian Shifren
  • Formation of correlated electron material (CEM) device via dopant deposition and anneal
    Patent number: 10418553
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 17, 2019
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams
  • CEM switching device
    Patent number: 10403816
    Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: September 3, 2019
    Assignee: Arm Limited
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Method, system and device for complementary non-volatile memory device operation
    Patent number: 10388377
    Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: August 20, 2019
    Assignee: ARM Ltd.
    Inventors: Azeez Bhavnagarwala, Robert Campbell Aitken, Lucian Shifren
  • Fabrication of correlated electron material films with varying atomic or molecular concentrations of dopant species
    Patent number: 10381560
    Abstract: Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: August 13, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • CORRELATED ELECTRON SWITCH ELEMENTS FOR BRAIN-BASED COMPUTING
    Publication number: 20190236441
    Abstract: Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.
    Type: Application
    Filed: January 31, 2018
    Publication date: August 1, 2019
    Inventors: Lucian SHIFREN, Shidhartha DAS, Naveen SUDA, Carlos Alberto PAZ de ARAUJO
  • Correlated electron switch programmable fabric
    Patent number: 10366753
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: July 30, 2019
    Assignee: Arm Limited
    Inventors: Lucian Shifren, Greg Yeric, Saurabh Sinha, Brian Cline, Vikas Chandra
  • Forming and operating memory devices that utilize correlated electron material (CEM)
    Patent number: 10340453
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: July 2, 2019
    Assignee: ARM Ltd.
    Inventors: Glen Arnold Rosendale, Lucian Shifren
  • CORRELATED ELECTRON DEVICE FORMED VIA CONVERSION OF CONDUCTIVE SUBSTRATE TO A CORRELATED ELECTRON REGION
    Publication number: 20190198758
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 27, 2019
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams, Lucian Shifren, Kimberly Gay Reid
  • ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION
    Publication number: 20190189921
    Abstract: Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Inventors: Lucian Shifren, Greg Yeric
  • Advanced transistors with punch through suppression
    Patent number: 10325986
    Abstract: An advanced transistor with punch through suppression includes a gate with length Lg, a well doped to have a first concentration of a dopant, and a screening region positioned under the gate and having a second concentration of dopant. The second concentration of dopant may be greater than 5×1018 dopant atoms per cm3. At least one punch through suppression region is disposed under the gate between the screening region and the well. The punch through suppression region has a third concentration of a dopant intermediate between the first concentration and the second concentration of dopant. A bias voltage may be applied to the well region to adjust a threshold voltage of the transistor.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: June 18, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Lucian Shifren, Pushkar Ranade, Paul E. Gregory, Sachin R. Sonkusale, Weimin Zhang, Scott E. Thompson
  • METHODS AND PROCESSES FOR FORMING DEVICES FROM CORRELATED ELECTRON MATERIAL (CEM)
    Publication number: 20190173008
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
    Type: Application
    Filed: November 26, 2018
    Publication date: June 6, 2019
    Inventors: Lucian Shifren, Kimberly Gay Reid, Gregory Munson Yeric, Manuj Rathor, Glen Arnold Rosendale
  • METHOD FOR THE MANUFACTURE OF A CORRELATED ELECTRON MATERIAL DEVICE
    Publication number: 20190165271
    Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.
    Type: Application
    Filed: January 29, 2019
    Publication date: May 30, 2019
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Lucian Shifren
  • SWITCHING DEVICE FORMED FROM CORRELATED ELECTRON MATERIAL
    Publication number: 20190157555
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Kimberly Gay Reid, Lucian Shifren
  • Fabrication of correlated electron material film via exposure to ultraviolet energy
    Patent number: 10276795
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, in which an ultraviolet light source is utilized during fabrication of a correlated electron material. In embodiments, use of ultraviolet light may decrease a likelihood of diffusion of atomic and/or molecular components of a substrate that may bring about undesirable electrical performance of a CEM device.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: April 30, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren