Patents by Inventor Lucian Shifren

Lucian Shifren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FABRICATION OF CORRELATED ELECTRON MATERIAL DEVICES WITH REDUCED INTERFACIAL LAYER IMPEDANCE
    Publication number: 20180019394
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.
    Type: Application
    Filed: July 12, 2016
    Publication date: January 18, 2018
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • CORRELATED ELECTRON MATERIAL DEVICES USING DOPANT SPECIES DIFFUSED FROM NEARBY STRUCTURES
    Publication number: 20180013062
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.
    Type: Application
    Filed: July 5, 2016
    Publication date: January 11, 2018
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Low power semiconductor transistor structure and method of fabrication thereof
    Patent number: 9865596
    Abstract: A structure and method of fabrication thereof relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced ?VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. The semiconductor structure includes an analog device and a digital device each having an epitaxial channel layer where a single gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the digital device and one of a double and triple gate oxidation layer is on the epitaxial channel layer of NMOS and PMOS transistor elements of the analog device.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: January 9, 2018
    Assignee: MIE Fujitsu Semiconductor Limited
    Inventors: Lucian Shifren, Pushkar Ranade, Scott E. Thompson, Sachin R. Sonkusale, Weimin Zhang
  • Selective writes in a storage element
    Patent number: 9859003
    Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: January 2, 2018
    Assignee: ARM Limited
    Inventors: Shidhartha Das, Andreas Hansson, Akshay Kumar, Piyush Agarwal, Azeez Jennudin Bhavnagarwala, Lucian Shifren
  • DEVICE AND METHOD FOR GENERATING RANDOM NUMBERS
    Publication number: 20170372783
    Abstract: According to an embodiment of the present disclosure, a device and a method are provided. The device includes one or more resistive random access memory (ReRAM) elements. The device further includes a random number generator configured to generate a random number in dependence on impedance values of the one or more ReRAM elements.
    Type: Application
    Filed: July 13, 2017
    Publication date: December 28, 2017
    Inventors: Lucian Shifren, Robert Campbell Aitken
  • ASYMMETRIC CORRELATED ELECTRON SWITCH OPERATION
    Publication number: 20170352808
    Abstract: Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.
    Type: Application
    Filed: August 18, 2017
    Publication date: December 7, 2017
    Inventors: Lucian Shifren, Greg Yeric
  • Semiconductor structure with multiple transistors having various threshold voltages
    Patent number: 9812550
    Abstract: A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: November 7, 2017
    Assignee: Mie Fujitsu Semiconductor Limited
    Inventors: Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, Michael Duane, U. C. Sridharan, Pushkar Ranade, Lucian Shifren, Thomas Hoffmann
  • ACCESS DEVICES TO CORRELATED ELECTRON SWITCH
    Publication number: 20170309821
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Application
    Filed: July 10, 2017
    Publication date: October 26, 2017
    Inventors: Carlos Alberto Paz de Araujo, Lucian Shifren
  • FABRICATING CORRELATED ELECTRON MATERIAL (CEM) DEVICES
    Publication number: 20170301859
    Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.
    Type: Application
    Filed: July 3, 2017
    Publication date: October 19, 2017
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Lucian Shifren
  • ONE-TIME AND MULTI-TIME PROGRAMING USING A CORRELATED ELECTRON SWITCH
    Publication number: 20170287528
    Abstract: An apparatus including a Correlated Electron Switch (CES) element and a programing circuit is provided. The programing circuit provides a programing signal to the CES element to program the CES element to an impedance state of multiple impedance states when a number of times the CES element has been programed is less than a threshold.
    Type: Application
    Filed: March 31, 2016
    Publication date: October 5, 2017
    Inventors: Lucian Shifren, Robert Campbell Aitken, Vikas Chandra, Bal S. Sandhu
  • Asymmetric correlated electron switch operation
    Patent number: 9755146
    Abstract: Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: September 5, 2017
    Assignee: ARM, Ltd.
    Inventors: Lucian Shifren, Greg Yeric
  • BARRIER LAYER FOR CORRELATED ELECTRON MATERIAL
    Publication number: 20170250340
    Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to one or more barrier layers having various characteristics formed under and/or over and/or around correlated electron material.
    Type: Application
    Filed: April 27, 2017
    Publication date: August 31, 2017
    Inventors: Carlos Alberto Paz de Araujo, Kimberly Gay Reid, Lucian Shifren
  • Device and method for generating random numbers
    Patent number: 9747982
    Abstract: According to an embodiment of the present disclosure, a device and a method are provided. The device includes one or more resistive random access memory (ReRAM) elements. The device further includes a random number generator configured to generate a random number in dependence on impedance values of the one or more ReRAM elements.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: August 29, 2017
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Robert Campbell Aitken
  • METHOD PROVIDING FOR A STORAGE ELEMENT
    Publication number: 20170244027
    Abstract: A method for forming a thin film comprising a metal, metal compound, or metal oxide on a substrate, which method comprises forming one or more thin film layers of a metal or metal oxide by a deposition process employing reactant precursors and/or relative amounts thereof which are selected to deposit a thin film layer with a controlled amount of dopant derived from at least one reactant precursor.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 24, 2017
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • DEVICE AND METHOD FOR GENERATING RANDOM NUMBERS
    Publication number: 20170243646
    Abstract: According to an embodiment of the present disclosure, a device and a method are provided. The device includes one or more resistive random access memory (ReRAM) elements. The device further includes a random number generator configured to generate a random number in dependence on impedance values of the one or more ReRAM elements.
    Type: Application
    Filed: February 22, 2016
    Publication date: August 24, 2017
    Inventors: Lucian Shifren, Robert Campbell Aitken
  • FABRICATION OF CORRELATED ELECTRON MATERIAL DEVICES METHOD TO CONTROL CARBON
    Publication number: 20170244032
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Application
    Filed: February 19, 2016
    Publication date: August 24, 2017
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • FABRICATION OF CORRELATED ELECTRON MATERIAL DEVICES COMPRISING NITROGEN
    Publication number: 20170237001
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Application
    Filed: February 17, 2016
    Publication date: August 17, 2017
    Inventors: Kimberly Gay Reid, Lucian Shifren, Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska
  • Access devices to correlated electron switch
    Patent number: 9735360
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: August 15, 2017
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Carlos Alberto Paz de Araujo
  • Correlated electron switch
    Patent number: 9735766
    Abstract: Subject matter disclosed herein may relate to correlated electron switches.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: August 15, 2017
    Assignee: ARM Ltd.
    Inventor: Lucian Shifren
  • FABRICATION OF CORRELATED ELECTRON MATERIAL DEVICES
    Publication number: 20170213961
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Application
    Filed: March 20, 2017
    Publication date: July 27, 2017
    Inventors: Carlos Alberto Paz de Araujo, Kimberly Gay Reid, Lucian Shifren