Patents by Inventor Lucian Shifren

Lucian Shifren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190109283
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Application
    Filed: November 26, 2018
    Publication date: April 11, 2019
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Publication number: 20190088875
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Application
    Filed: November 19, 2018
    Publication date: March 21, 2019
    Inventors: Carlos Alberto Paz de Araujo, Lucian Shifren
  • Publication number: 20190088876
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.
    Type: Application
    Filed: November 19, 2018
    Publication date: March 21, 2019
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Patent number: 10217937
    Abstract: Subject matter disclosed herein may relate to correlated electron switches that are capable of asymmetric set or reset operations.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: February 26, 2019
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Greg Yeric
  • Patent number: 10217935
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: February 26, 2019
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Christopher Randolph McWilliams, Lucian Shifren, Kimberly Gay Reid
  • Patent number: 10217838
    Abstract: A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element. Different characteristics include doping concentration and depth of implant. In addition, a different characteristic may be achieved by concurrently implanting the second screening region in the second and third transistor element followed by implanting an additional dopant into the second screening region of the third transistor element.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: February 26, 2019
    Assignee: MIE FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, Michael Duane, U. C. Sridharan, Pushkar Ranade, Lucian Shifren, Thomas Hoffmann
  • Publication number: 20190058119
    Abstract: Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicant: Arm Limited
    Inventors: Kimberly Gay REID, Lucian SHIFREN, Carlos Alberto PAZ de ARAUJO, Jolanta Bozena CELINSKA
  • Publication number: 20190058118
    Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicant: Arm Limited
    Inventors: Carlos Alberto PAZ de ARAUJO, Jolanta Bozena CELINSKA, Kimberly Gay REID, Lucian SHIFREN
  • Patent number: 10211398
    Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapor deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: February 19, 2019
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Lucian Shifren
  • Publication number: 20190051824
    Abstract: Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material. These processes may use comparatively lower temperatures as compared to those used for forming a correlated electron material comprising a transition metal oxide.
    Type: Application
    Filed: October 15, 2018
    Publication date: February 14, 2019
    Applicant: Arm Limited
    Inventors: Kimberly Gay REID, Lucian SHIFREN
  • Patent number: 10193063
    Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: January 29, 2019
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Kimberly Gay Reid, Lucian Shifren
  • Publication number: 20190027216
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Application
    Filed: August 20, 2018
    Publication date: January 24, 2019
    Inventors: Lucian Shifren, Greg Yeric, Saurabh Sinha, Brian Cline, Vikas Chandra
  • Patent number: 10181350
    Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: January 15, 2019
    Assignee: Arm Limited
    Inventors: Shidhartha Das, Andreas Hansson, Akshay Kumar, Piyush Agarwal, Azeez Jennudin Bhavnagarwala, Lucian Shifren
  • Publication number: 20190006588
    Abstract: Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.
    Type: Application
    Filed: July 3, 2017
    Publication date: January 3, 2019
    Inventors: Carlos Alberto Paz de Araujo, Jolanta Bozena Celinska, Lucian Shifren
  • Patent number: 10170700
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: January 1, 2019
    Assignee: ARM Ltd.
    Inventors: Kimberly Gay Reid, Lucian Shifren
  • Publication number: 20180366195
    Abstract: Disclosed are methods, systems and devices for operation of dual non-volatile memory devices. In one aspect, a pair of non-volatile memory device coupled in series may be placed in complementary memory states any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 20, 2018
    Inventors: Azeez Bhavnagarwala, Robert Campbell Aitken, Lucian Shifren
  • Publication number: 20180351098
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.
    Type: Application
    Filed: May 31, 2017
    Publication date: December 6, 2018
    Inventors: Glen Arnold Rosendale, Lucian Shifren
  • Patent number: 10147879
    Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to integrated circuit fabrics including correlated electron switch devices having various impedance characteristics.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: December 4, 2018
    Assignee: ARM Ltd.
    Inventor: Lucian Shifren
  • Patent number: 10141504
    Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: November 27, 2018
    Assignee: ARM Ltd.
    Inventors: Lucian Shifren, Kimberly Gay Reid, Greg Munson Yeric, Manuj Rathor, Glen Arnold Rosendale
  • Patent number: 10134987
    Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: November 20, 2018
    Assignee: ARM Ltd.
    Inventors: Carlos Alberto Paz de Araujo, Lucian Shifren