Patents by Inventor Lun Wang

Lun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9796288
    Abstract: A vehicle includes an electric machine, a traction battery to power the electric machine, and a starting, lighting and ignition (SLI) battery. The vehicle also includes a galvanically isolated DC-DC converter connecting the batteries and having a bus capacitance in parallel therewith. The vehicle further includes a contactor to electrically connect the traction battery in parallel with the bus capacitance, and a controller. The controller, in response to a command to close the contactor, activates switches of the DC-DC converter to drive energy from the SLI battery to the bus capacitance before closing the contactor.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: October 24, 2017
    Assignee: Ford Global Technologies, LLC
    Inventors: Arnold Kweku Mensah-Brown, Allan Roy Gale, Bruce Carvell Blakemore, Chih-Lun Wang
  • Publication number: 20170302045
    Abstract: A composite connector includes an insulative base having a seat and a tongue plate extended forward from the seat, a first insulative board attached onto the seat and arranged in parallel to the tongue and on one side of the first surface, a plurality of first conductive terminal pieces located on an outer side of the first insulative board and away from the tongue, a second insulative board attached onto the base and arranged in parallel to the tongue plate and on one side of the second surface, a plurality of second conductive terminal pieces located on an outer side of the second insulative board and away from the tongue plate, and a plurality of first elastic connecting terminals arranged between the first surface and the first insulative board. Accordingly, the technical effect of transmission for multiple transmission interfaces is achieved.
    Type: Application
    Filed: April 1, 2017
    Publication date: October 19, 2017
    Inventors: Pei-Lun WANG, Xinping LUO
  • Publication number: 20170289337
    Abstract: The present disclosure provides systems and methods for text entry through handwritten shorthand stroke patterns. One example computer-implemented method includes receiving, by a mobile computing device, data descriptive of an input stroke pattern entered by a user. The input stroke pattern includes one or more strokes that approximate a non-linguistic symbol. The method includes identifying, by the mobile computing devices, one of a plurality of shorthand stroke patterns as a matched shorthand pattern to which the input stroke pattern corresponds. The plurality of shorthand stroke patterns have been previously defined by the user. A plurality of output text strings are respectively associated with the plurality of shorthand stroke patterns. The method further includes, in response to identifying the matched shorthand pattern, entering, by the mobile computing device, the output text string associated with the matched shorthand pattern into a text entry field.
    Type: Application
    Filed: April 5, 2016
    Publication date: October 5, 2017
    Inventors: Li-Lun Wang, Victor Carbune, Dhyanesh Narayanan, Henry Rowley, Thomas Deselaers
  • Publication number: 20170282747
    Abstract: A vehicle power system includes circuitry including a transformer having a single primary coil and at least two secondary coils electrically isolated from one another, one of the secondary coils being electrically connected to a traction battery and another of the secondary coils being electrically connected to an auxiliary battery, and a controller configured to operate the circuitry to transfer power from the primary coil to each of the batteries at a same time.
    Type: Application
    Filed: April 5, 2016
    Publication date: October 5, 2017
    Inventor: Chih-Lun WANG
  • Publication number: 20170278963
    Abstract: A method includes forming a gate spacer along sidewalls of a gate structure, forming a source region and a drain region on opposite sides of the gate structure, wherein a sidewall of the source region is vertically aligned with a first sidewall of the gate spacer, depositing a dielectric layer over the substrate, depositing a conductive layer over the dielectric layer, patterning the dielectric layer and the conductive layer to form a field plate, wherein the dielectric layer comprises a horizontal portion extending from the second drain/source region to a second sidewall of the gate spacer and a vertical portion formed along the second sidewall of the gate spacer, forming a plurality of metal silicide layers by applying a salicide process to the conductive layer, the gate structure, the first drain/source region and the second drain/source region and forming contact plugs over the plurality of metal silicide layers.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 28, 2017
    Inventors: Ming-Chyi Liu, Pei-Lun Wang, Yuan-Tai Tseng, Yu-Hsing Chang, Shih-Chang Liu
  • Publication number: 20170254956
    Abstract: The present disclosure relates to an optical fiber structure, an optical communication apparatus and a manufacturing process for manufacturing the same. The optical fiber structure includes a core portion and a cladding portion. The cladding portion encloses the core portion, and includes a light reflection surface and a light incident surface. The light reflection surface is inclined at an angle of about 30 degrees to about 60 degrees with respect to the core portion, and the light incident surface is substantially flat and is substantially parallel with the core portion.
    Type: Application
    Filed: March 1, 2016
    Publication date: September 7, 2017
    Inventors: Wei Lun WANG, Yi-Min CHIN, Mei-Ju LU, Jia-Hao ZHANG
  • Publication number: 20170243865
    Abstract: A semiconductor device includes a first a first transistor configured to operate at a first threshold voltage level. The first transistor includes a first gate structure and a first drain terminal electrically coupled to the first gate structure. The semiconductor device also includes a second transistor configured to operate at a second threshold voltage level different from the first threshold voltage level, The second transistor includes a second source terminal and a second gate structure electrically coupled to the first gate structure. The first gate structure and the second gate structure comprise a first component in common, and the second gate structure further includes at least one extra component disposed over the first component. The number of the at least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.
    Type: Application
    Filed: May 8, 2017
    Publication date: August 24, 2017
    Inventors: CHEN-YI LEE, SHIH-FEN HUANG, PEI-LUN WANG, DAH-CHUEN HO, YU-CHANG JONG, MOHAMMAD AL-SHYOUKH, ALEXANDER KALNITSKY
  • Publication number: 20170207995
    Abstract: A method, apparatus and/or system of selecting a routing in an asymmetric link, in which an arbitrary intermediate node of the at least one intermediate node receives routing request information including a first link quality for a path from the source node to the arbitrary neighbor node from an arbitrary neighbor node of the arbitrary intermediate node, acquires a second link quality for a path between the arbitrary intermediate node and the arbitrary neighbor node, acquires a third link quality based on the first and second link qualities, updates the first link quality in the routing request information with the third link quality, and broadcasts an updated routing request information to other neighbor node for the destination node to determine at least one of a desirable forward path or a desirable backward path from the source node to the destination node, may be provided.
    Type: Application
    Filed: December 8, 2016
    Publication date: July 20, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: QIANG GAO, Ying HUANG, Hong Li GE, Jang-su LEE, Lun WANG
  • Publication number: 20170154882
    Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first transistor configured to include a first threshold voltage level. The first transistor includes a gate structure. The gate structure includes a first component including a first conductive type. A second transistor configures to include a second threshold voltage level different from the first threshold voltage level. The second transistor includes a gate structure. The gate structure includes a second component including the first conductive type. At least one extra component is disposed over the second component. The least one extra component includes a second conductive type opposite to the first conductive type. The first transistor and the second transistor are coupled such that the number of the least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.
    Type: Application
    Filed: November 30, 2015
    Publication date: June 1, 2017
    Inventors: CHEN-YI LEE, SHIH-FEN HUANG, PEI-LUN WANG, DAH-CHUEN HO, YU-CHANG JONG, MOHAMMAD AL-SHYOUKH, ALEXANDER KALNITSKY
  • Patent number: 9666574
    Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a first transistor configured to include a first threshold voltage level. The first transistor includes a gate structure. The gate structure includes a first component including a first conductive type. A second transistor configures to include a second threshold voltage level different from the first threshold voltage level. The second transistor includes a gate structure. The gate structure includes a second component including the first conductive type. At least one extra component is disposed over the second component. The least one extra component includes a second conductive type opposite to the first conductive type. The first transistor and the second transistor are coupled such that the number of the least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: May 30, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chen-Yi Lee, Shih-Fen Huang, Pei-Lun Wang, Dah-Chuen Ho, Yu-Chang Jong, Mohammad Al-Shyoukh, Alexander Kalnitsky
  • Publication number: 20170148911
    Abstract: The present disclosure relates to a transistor device having a field plate, and a method of formation. In some embodiments, the transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers laterally extend from over the gate electrode to a location between the gate electrode and the drain region. A field plate is located within an inter-level dielectric (ILD) layer overlying the substrate. The field plate laterally extends from over the gate electrode to over the location and vertically extends from the one or more dielectric layers to a top surface of the ILD layer. A conductive contact is arranged over the drain region and is surrounded by the ILD layer. The conductive contact extends to the top surface of the ILD layer.
    Type: Application
    Filed: February 3, 2017
    Publication date: May 25, 2017
    Inventors: Hsueh-Liang Chou, Dah-Chuen Ho, Hui-Ting Lu, Po-Chih Su, Pei-Lun Wang, Yu-Chang Jong
  • Publication number: 20170128625
    Abstract: Provided herein are organoids comprising decellularized placental vascular scaffold comprising, or consisting of, a decellularized placental vascular scaffold, and methods of making and using the same.
    Type: Application
    Filed: June 15, 2016
    Publication date: May 11, 2017
    Applicant: ANTHROGENESIS CORPORATION
    Inventors: Mohit B. Bhatia, Robert J. Hariri, Wolfgang Hofgartner, Jia-Lun Wang, Qian Ye
  • Publication number: 20170125608
    Abstract: In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region.
    Type: Application
    Filed: October 30, 2015
    Publication date: May 4, 2017
    Inventors: HUI-TING LU, YU-CHANG JONG, PEI-LUN WANG
  • Patent number: 9638888
    Abstract: An imaging lens includes first to fifth lens elements arranged from an object side to an image side in the given order. Through designs of surfaces of the lens elements and relevant optical parameters, a short system length of the imaging lens may be achieved while maintaining good optical performance.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: May 2, 2017
    Assignee: Genius Electronic Optical Co., Ltd.
    Inventors: Feng Chen, Kai-Lun Wang, Long Ye
  • Patent number: 9634154
    Abstract: In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: April 25, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hui-Ting Lu, Yu-Chang Jong, Pei-Lun Wang
  • Patent number: 9590053
    Abstract: The present disclosure relates to a high voltage transistor device having a field plate, and a method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed over a substrate between a source region and a drain region located within the substrate. A dielectric layer laterally extends from over the gate electrode to a drift region arranged between the gate electrode and the drain region. A field plate is located within a first inter-level dielectric layer overlying the substrate. The field plate laterally extends from over the gate electrode to over the drift region and vertically extends from the dielectric layer to a top surface of the first ILD layer. A plurality of metal contacts, having a same material as the field plate, vertically extend from a bottom surface of the first ILD layer to a top surface of the first ILD layer.
    Type: Grant
    Filed: January 26, 2015
    Date of Patent: March 7, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsueh-Liang Chou, Dah-Chuen Ho, Hui-Ting Lu, Po-Chih Su, Pei-Lun Wang, Yu-Chang Jong
  • Publication number: 20170056452
    Abstract: Provided herein are methods of using adherent placental stem cells and placental stem cell populations, and methods of culturing, proliferating and expanding the same. Also provided herein are methods of differentiating the placental stem cells. Further provided herein are methods of using the placental stem cells to formulate implantable or injectable compositions suitable for administration to a subject. Still further provided herein are provides methods for treating bone defects with stem cells and compositions comprising stem cells.
    Type: Application
    Filed: April 7, 2016
    Publication date: March 2, 2017
    Applicant: Anthrogenesis Corporation
    Inventors: James W. Edinger, Robert J. Hariri, Jia-Lun Wang, Qian Ye, Kristen S. Labazzo, Marian Pereira, Sascha Dawn Abramson
  • Publication number: 20170054260
    Abstract: A composite connection socket includes a metal housing, an insulative main body, a first row conductive terminal and a second row conductive terminal. The metal housing includes an accommodating space formed therein, and the insulative main body is received inside the accommodating space. The insulative main body includes a first side plate, a second side plate and a base; the first side plate and the second side plate are arranged corresponding to each other and protrude from the base. The first row conductive terminal is arranged on the first side plate and complies with a micro USB communication protocol interface. The second row conductive terminal is arranged on the second side plate and complies with a lightning standard interface. The composite connection socket is able to commonly accommodate two cable connectors of different standards of a micro USB connector or a lightning connector inserted therein.
    Type: Application
    Filed: August 19, 2016
    Publication date: February 23, 2017
    Inventors: Pei-Lun WANG, Xinping LUO
  • Publication number: 20170045892
    Abstract: A flight monitoring system comprises a first set of flight-status detecting sensors comprising a first-type sensor A1 for providing a first-type measurement result and a second-type sensor A2 for providing a second-type measurement result; a second set of flight-status detecting sensors comprising a first-type sensor B1 for providing a first-type measurement result and a second-type sensor B2 for providing a second-type measurement result.
    Type: Application
    Filed: September 30, 2016
    Publication date: February 16, 2017
    Inventors: SHUAIQIN WANG, LUN WANG, LIN YANG, JIANJUN YANG
  • Publication number: 20170007648
    Abstract: Provided herein are methods of treatment of individuals having an immune-related disease, disorder or condition, for example, inflammatory bowel disease, graft-versus-host disease, multiple sclerosis, rheumatoid arthritis, psoriasis, lupus erythematosus, diabetes, mycosis fungoides (Alibert-Bazin syndrome), or scleroderma using placental stem cells or umbilical cord stem cells.
    Type: Application
    Filed: September 21, 2016
    Publication date: January 12, 2017
    Applicant: ANTHROGENESIS CORPORATION
    Inventors: James W. Edinger, Robert J. Hariri, Jia-Lun Wang, Qian Ye, Herbert Faleck