Abstract: At least one method, apparatus and system disclosed herein for forming a semiconductor device comprising a plurality of cells having metal features formed using triple patterning processes. An overall pattern layout is created for a first cell that is to be manufactured using a triple patterning process for forming a plurality of metal features on a metal layer. A first color metal feature is formed in the metal layer. The first color metal feature is associated with a first patterning process of the triple patterning process. A second color metal feature is formed in the metal layer. The second color metal feature is associated with a second patterning process of the triple patterning process. A third color metal feature is formed in the metal layer. The third color metal feature is associated with a third patterning process of the triple patterning process. At least one of the first, second, and third color metal features is re-colorable.

Abstract: At least one method, apparatus and system disclosed involves an antenna diode design for a semiconductor device. A first common diode operatively coupled to a ground node and to a p-well layer serving as an isolated p-well that is formed over a deep n-well that is adjacent to an n-well in a semiconductor device is provided. A first antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a first signal line of the semiconductor device is provided for discharging accumulated charges on the first signal line. A second antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a second signal line of semiconductor device is provided for discharging accumulated charges on the second signal line.

Abstract: Methods and systems assign an alignment context to each of the cells within an integrated circuit layout, from previously established alignment contexts, based on how the different cell widths cause each of the cells to align with adjoining cells. Also, such methods and systems retrieve standard signal delay times for each of the cells from a standard cell library. This allows these methods and systems to adjust the signal delay times for each of the cells based on which alignment context has been assigned to each of the cells, to produce adjusted delay times for each of the cells. Following this, the methods and systems perform a timing analysis of the layout using the adjusted delay times for each of the cells, and output the results of the timing analysis.

Abstract: A multi-layer integrated circuit structure includes (among other components) a first layer having gate conductors, a second layer having M0 conductors, a third layer having M1 conductors, and a fourth layer having M2 conductors. The M0 and M2 conductors are perpendicular to the gate conductors, and parallel to each other. The M1 conductors connect the M0 conductors to the M2 conductors. The gate conductors are positioned in the first layer in the same locations in the horizontal direction. The M1 conductors are positioned in the third layer in a different location in the horizontal direction that is different from the locations of the gate conductors, so that the M1 conductors do not overlap any of the gate conductors, solving a substantial routing challenge for the input and output contacts.

Abstract: Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

Abstract: Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

Abstract: At least one method, apparatus and system disclosed involves an integrated circuit comprising a unidirectional metal layout. A first set of metal features are formed in a vertical configuration in a first metal layer of a memory cell. A second set of metal features are formed in a unidirectional horizontal configuration in a second metal layer of the memory cell. A third set of metal features are formed in the unidirectional horizontal configuration in a second metal layer of a functional cell for providing routing compatibility between the memory cell and the functional cell. The memory cell is placed adjacent to the functional cell for forming an integrated circuit device.

Abstract: At least one method, apparatus and system disclosed involves providing a design for manufacturing a semiconductor device. A first functional cell having a first width is placed on a circuit layout. A determination is made as to whether at least one transistor of the first functional cell is to be forward biased or reversed biased. A second functional cell having a second width is placed adjacent to the first functional cell on the circuit layout for providing a first biasing well within the total width of the first and second functional cells in response to determining that the at least one transistor is to be forward biased or reversed biased.

Abstract: At least one method, apparatus and system disclosed herein for forming a semiconductor device comprising a plurality of cells having metal features formed using triple patterning processes. An overall pattern layout is created for a first cell that is to be manufactured using a triple patterning process for forming a plurality of metal features on a metal layer. A first color metal feature is formed in the metal layer. The first color metal feature is associated with a first patterning process of the triple patterning process. A second color metal feature is formed in the metal layer. The second color metal feature is associated with a second patterning process of the triple patterning process. A third color metal feature is formed in the metal layer. The third color metal feature is associated with a third patterning process of the triple patterning process. At least one of the first, second, and third color metal features is re-colorable.

Abstract: Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

Abstract: At least one method, apparatus and system disclosed involves an antenna diode design for a semiconductor device. A first common diode operatively coupled to a ground node and to a p-well layer serving as an isolated p-well that is formed over a deep n-well that is adjacent to an n-well in a semiconductor device is provided. A first antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a first signal line of the semiconductor device is provided for discharging accumulated charges on the first signal line. A second antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a second signal line of semiconductor device is provided for discharging accumulated charges on the second signal line.

Abstract: Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

Abstract: At least one method, apparatus and system disclosed involves providing a design for manufacturing a semiconductor device. A first functional cell having a first width is placed on a circuit layout. A determination is made as to whether at least one transistor of the first functional cell is to be forward biased or reversed biased. A second functional cell having a second width is placed adjacent to the first functional cell on the circuit layout for providing a first biasing well within the total width of the first and second functional cells in response to determining that the at least one transistor is to be forward biased or reversed biased.

Abstract: At least one method, apparatus and system disclosed involves providing a design for manufacturing a semiconductor device. An operation modeling of a semiconductor device circuit design is performed. At least one transistor is identified for providing at least one of a first voltage for forward biasing the transistor or a second voltage for reverse biasing the transistor. Selectively providing a delay for adjusting a timing associated with the transistor based upon identifying the at least one transistor for providing the at least one of a first voltage for forward biasing the transistor or a second voltage for reverse biasing.

Abstract: Embodiments described herein provide approaches for improved circuit routing using a wide-edge pin. Specifically, provided is an integrated circuit (IC) device comprising a standard cell having a first metal layer (M1) pin coupled to a second metal layer (M2) wire at a via. The M1 pin has a width greater than a width of the via sufficient to satisfy an enclosure rule for the via, while the M1 pin extends vertically past the via a distance substantially equal to or greater than zero. This layout increases the number of available pin access points within the standard cell and thus improves routing efficiency and chip size.

Abstract: An approach for providing SRAM bit cells with miniaturized bit cells, without local interconnection layers, with improved lithographic printability, and enabling methodology are disclosed. Embodiments include providing first color structures, in a M1 layer, including a first word line, a first bit line, a second bit line, a first ground line, a second ground line, a second latch line or a combination thereof, wherein the first color structures include side edges longer than tip edges; providing second color structures, in the M1 layer, including a second word line, a first power line, a second power line, a first latch line or a combination thereof, wherein the second color structures include side edges longer than tip edges; and forming a bit cell including the first color structures and the second color structures, wherein adjacent tip edges include a first color structure tip edge and a second color structure tip edge.

Abstract: A method and apparatus for an assisted metal routing is disclosed. Embodiments may include: determining an initial block mask having a first inner vertex for forming a metal routing layer of an integrated circuit (IC); adding an assistant metal portion within the metal routing layer; and determining a modified block mask based on the assistant metal portion for forming the metal routing layer.

Abstract: At least one method, apparatus and system disclosed herein for processing a semiconductor wafer using a continuous active area design for manufacturing a finFET device. A first gate structure of a continuous active area design is formed in a first layer of the wafer. A first hard mask layer is deposited. A portion of the first hard mask layer is removed based upon a first trench silicide (TS) pattern and a second TS pattern. A full stripe first trench silicide (TS) structure and a second TS structure are formed. A first TS capping layer is deposited above the first TS structure and a second TS capping. The first TS capping layer is removed and a source/drain contact structure (CA) is formed above the first TS structure in a second layer of the semiconductor wafer. A gate contact structure (CB) is formed above the gate structure in the second layer.

Abstract: An approach for providing SRAM bit cells with miniaturized bit cells, without local interconnection layers, with improved lithographic printability, and enabling methodology are disclosed. Embodiments include providing first color structures, in a M1 layer, including a first word line, a first bit line, a second bit line, a first ground line, a second ground line, a second latch line or a combination thereof, wherein the first color structures include side edges longer than tip edges; providing second color structures, in the M1 layer, including a second word line, a first power line, a second power line, a first latch line or a combination thereof, wherein the second color structures include side edges longer than tip edges; and forming a bit cell including the first color structures and the second color structures, wherein adjacent tip edges include a first color structure tip edge and a second color structure tip edge.

Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors comprises a source, a drain, and a gate. A trench silicide layer electrically connects one of the source or the drain of the first transistor to one of the source or the drain of the second transistor.