Abstract: A current mirror is composed of N-MOS transistors N1, N2, a diode-connected P-MOS transistor P1 is connected to an output side of the current mirror, and a source of a P-MOS transistor P2 controlled according to the gate potential of the P-MOS transistor P1 is connected to a power source V.sub.CC via a polysilicon resistor R. The drain of the P-MOS transistor P2 is connected to the drain of the N-MOS transistor N2. A current-mirror-connected N-MOS transistor N3 is provided at the current mirror of the N-MOS transistors N1, N2. The output of the N-MOS transistor N3 is inputted to another current mirror composed, on the power source V.sub.CC side, of two P-MOS transistors P3, P4, a constant current is outputted from the drain of one of the two P-MOS transistors P3, P4 and received by a load circuit which is the series-parallel connection of diode-connected P-MOS transistors P5-P8, and the voltage generated at the load circuit is outputted as a reference voltage output V.sub.REF.

Abstract: A liquid crystal device is constituted by disposing a liquid crystal between a pair of substrates; at least one of which has thereon an alignment film comprising a polymer selected from Polymers (I)-(III) below:Polymer (I) which is a polymer composite comprising at least two polymer components including a polyamide represented by a structural unit of the following formula (1): ##STR1## wherein R.sub.11 and R.sub.12 independently denote an alkyl group having 1-10 carbon atoms or a fluoroalkyl group having 1-10 carbon atoms;Polymer (II) which is a composite polyamide having at least two species of dicarboxylic acid-originated units each represented by formula (2) below: ##STR2## wherein R.sub.21 denotes a divalent organic residue group including an aromatic ring; and a diamine-originated unit represented by formula (3) below: ##STR3## wherein R.sub.22 and R.sub.

Abstract: An electro-optical modulating system comprised of a liquid crystal device with a plurality of pixels each comprising a pair of opposite electrodes, and an optical modulating substance assuming a first molecular orientation state and a second molecular orientation state between the electrodes. The system further comprises voltage application circuit for applying to a pixel among said plurality of pixels a first voltage for resetting the pixel to be occupied with the first molecular orientation state, a second voltage for resetting the pixel into a mixture state, including a minor proportion of the first molecular orientation state and a major proportion of the second molecular orientation state, and then a third voltage for causing a prescribed ratio of the first to second molecular orientation state at the pixel not smaller than the ratio in the mixture state.

Abstract: A liquid crystal device is constituted by a pair of substrates, and a liquid crystal disposed between the substrates. At least one of the substrates has thereon an alignment film. The alignment film is characterized in that (1) it has a surface energy of at most 35 dyne/cm before rubbing and has been rubbed to have a refractive index anisotropy of at least 0.02, or (2) it has been rubbed to have a surface energy difference .DELTA.E of at least 9 dyne/cm and a difference .DELTA..delta. in dispersion term of the surface energy of at least 6 dyne/cm between before and after the rubbing. The alignment film is effective in providing a high contrast and decreasing a delay in optical response causing after-image.

Abstract: A ferroelectric liquid crystal device of a cell structure having a suppressed increase of cell thickness along a cell side is constituted by disposing a ferroelectric liquid crystal between a pair of electrode plates each sequentially provided with an electrode, an insulating film and an alignment film on a substrate. The alignment film is provided with a surface unevenness for suppressing a liquid crystal movement causing the increase in cell thickness. The surface unevenness is provided to the alignment film directly or to the insulating film below the alignment film, e.g., by wet forming the relevant film by using at least two solvents having different boiling points or dispersing fine particles within the relavant film, optionally followed by removal of the fine particles.

Abstract: A liquid crystal device is constituted by a pair of substrates, at least one of which has an alignment film thereon, and a liquid crystal disposed between the substrates, The alignment film is formed of a resin including a first polyamide represented by formula (I) below and a second polyamide represented by formula (II) below: ##STR1## wherein R.sub.1 -R.sub.4 independently denote a group of CF.sub.3 (CF.sub.2).sub.1 (CH.sub.2).sub.m wherein l and m are integers satisfying 1.gtoreq.0 and m .gtoreq.O; A.sub.1 and A.sub.2 are mutually different divalent organic residues; and n1 and n2 are integers satisfying n1.gtoreq.2 and n2 .gtoreq.2.

Abstract: A liquid crystal device is constituted by a pair of substrates and a ferroelectric liquid crystal disposed between the substrates. At least one of the pair of substrates has thereon an alignment film of a polyimide having a recurring unit of the following formula (I): ##STR1## wherein R.sub.1 denotes a tetravalent organic residue; and X.sub.1 -X.sub.8 independently denote an alkyl group having 1-15 carbon atoms, an alkoxy group having 1-15 carbon atoms, CF.sub.3 group, halogen or hydrogen atom with the proviso that at least one of X.sub.1 -X.sub.4 is not hydrogen atom and at least one of X.sub.5 -X.sub.8 is not hydrogen atom.

Abstract: A liquid crystal device is constituted by a pair of substrates each provided with a transparent electrode, and a liquid crystal disposed between the substrates; at least one of said pair of substrates having thereon an alignment film comprising (i) a polyimide including principally a recurring unit of the following structural formula (I): ##STR1## wherein R.sub.11 denotes a tetravalent organic group, and R.sub.12 and R.sub.13 denote the same or different alkyl or perfluoroalkyl groups having 1 - 10 carbon atoms, and also at most 10 mol. % of a recurring monoamine unit of the following structural formula (II): ##STR2## wherein R.sub.21 and R.sub.22 denote the same or different alkyl or perfluoroalkyl groups having 1 - 10 carbon atoms, and X denotes an aromatic group, a heterocyclic group or a derivative group thereof; or (ii) a polyimide obtained through a reaction of at least two species of tetracarboxylic anhydrides of the following formula (III): ##STR3## wherein R.sub.

Abstract: A functional substrate for controlling pixels, comprising;a) a substrate;b) an insulating film provided on said substrate;c) a stripe-shaped transparent conductive film provided in plurality on said insulating film;d) an opaque conductive film covered with said insulating film, arranged in parallel to said stripe-shaped transparent conductive film, and disposed between two stripe-shaped transparent conductive films adjacent to each other; ande) a contact area at which one of said two stripe-shaped transparent conductive films adjacent to each other and said opaque conductive film are electrically connected.

Abstract: A semiconductor non-volatile memory device, has plural data storage parts which are connected in series between the source region and drain region. In such a constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of the semiconductor non-volatile memory device can be dramatically enhanced. The device also allows for setting the semiconductor substrate in a depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this transferring of electric charges, data write errors may be prevented.

Abstract: A semiconductor non-volatile memory device, has plural data storage parts which are connected in series between the source region and drain region. In such a constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of the semiconductor non-volatile memory device can be dramatically enhanced. The device also allows for setting the semiconductor substrate in a depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this transferring of electric charges, data write errors may be prevented.

Abstract: An image forming apparatus includes a light source; an optical shutter unit comprising a pair of parallel substrates respectively having a plurality of scanning electrodes and a plurality of data electrodes disposed to intersect with each other to form a matrix electrode structure on their opposite surfaces, and a ferroelectric liquid crystal disposed between the pair of substrates so as to form a microshutter at each intersection of the scanning electrodes and data electrodes; an optical system for forming an image at a desired position with light transmitted through the optical shutter unit; a photosensitive member as a medium for recording the thus formed image; a scanning side drive circuit for applying a scanning voltage signal to the plurality of scanning electrodes so as to sequentially select at least one scanning electrode in a prescribed cycle; and a data side drive unit for applying data voltage signals to the plurality of data electrodes in synchronism with said scanning voltage signal.

Abstract: This invention relates to an integrated high voltage generating system provided with a charge pump for raising the input power supply voltage sequentially while transferring the electric charges of the capacitors on a stage by stage basis, by serially connecting unit circuits composed of diode elements and capacitors, and supplying clock signals of mutually opposite phases to adjacent capacitors. Source and drain electrodes of a MOS transistor are connected between the first power supply output terminal and a second power supply output terminal, and the gate electrode of this MOS transistor is connected to the input end of any one of the unit circuits of the charge pump, wherein the voltage of the first power supply output terminal is stepped down depending on the voltage applied to the gate electrode of the MOS transistor, and is delivered to the second power supply output terminal.

Abstract: A composition for fixing a metal powder molding at sintering, which is used, in the case of disposing a metal powder molding formed by rolling a mixture of a metal powder and a synthetic resin-based binder on a metal base material and sintering the metal powder molding in a non-oxidizing atmosphere, to adhere and fix the metal powder molding onto the base material until the metal powder molding is sintered interposing between the metal powder molding and the base material, comprising a polyimide liquid composition containing a polyimide precursor and an organic solvent as the essential components.

Abstract: In a voltage detection circuit, at least a portion of the gate insulation film of a voltage detecting transistor is formed thicker than the other portion of the gate insulation film. Such voltage detecting transistor can be fabricated on a semiconductor substrate in the same process as conventional MOS transistors, so that the extra mask or process is not required. And since the amount of trapped electron does not change due to the passing of time, aging effects for detection precision is small.

Abstract: A process for producing an aliphatic polyimide resin is described, comprising reacting an aliphatic tetracarboxylic acid with a diamine in the presence of a second acid having a higher electrolytic dissociation constant than the aliphatic tetracarboxylic acid.

Abstract: A heat resistant resin solution comprising (1) at least one solvent selected from the group consisting of alcohols, polyhydric alcohols, polyhydric alcohol derivatives, ketones, ethers and esters, (2) aqueous ammonia and (3) a polymer having a residual acid value of about 5 to 40% obtained by reaction of a 1,2,3,4-butanetetracarboxylic acid, an aromatic tricarboxylic acid anhydride and a diamine in the presence of a polyhydric alcohol and a method of preparation of the heat resistant resin solution.

Abstract: A concentrated solution suitable for forming thermal resisting polymers having a high degree of polymerization comprising a mixture of a prepolymer solution prepared by the reaction of an organic diisocyanate or diamine and a molar excess of 1,2,3,4-butanetetracarboxylic acid or an anhydride of the acid, and a blocked polyisocyanate.