Abstract: A method of fabricating a hybrid organic-inorganic halide perovskite film includes depositing a precursor layer onto a substrate, the precursor layer comprising metal halide, placing an organic source-material layer onto a boat, the organic source-material layer comprising an organic cation, and annealing the precursor layer and the organic source-material layer in a vacuum chamber enclosed in a constrained volume.

Abstract: Machine-learning techniques are used to train a classifier to predict auditory and language skills improvement in a patient who is a candidate for cochlear implantation (CI). One or more images of portions of the patient's brain are obtained, and quantitative data is extracted that represents the composition of one or more brain areas related to auditory and/or cognitive processing. For training of the classifier, data is obtained for previous CI patients whose improvement in language skills has been measured. Once trained, the classifier can be used to predict a likely degree of improvement in a prospective CI patient's auditory and language skills.

Abstract: An electrical switch unit for use in controlling operation of an electrical device, the electrical switch unit including: an electrical switch unit housing for housing at least a pair of electrical switching contacts of the electrical switch unit, said electrical switch unit housing including a first housing member and a second housing member that are configured for attachment together at peripheral regions of the first and second housing members so as to cooperatively form an enclosed space for housing the pair of electrical switching contacts therein; an actuator member operably-connected with at least one of the pair of electrical switching contacts, the actuator being configured for movement relative inwardly and outwardly of an opening in the electrical switch unit housing so as to arrange the pair of electrical switching contacts into at least one of a closed configuration wherein power is able to be supplied from a power source to motor or other electrically-operable element of the electrical device vi

Abstract: A control assembly for use in controlling a speed of operation of an electric device, the control assembly including: a control assembly housing; a magnetic sensor; a magnetic element; an actuator that is configured for movement relative to the control assembly housing wherein responsive to said movement of the actuator relative to the control assembly housing, the magnetic sensor and magnetic element move relative to each other between at least one of a first position and a second position such that the magnetic sensor senses a first magnetic field reading when in the first position and senses a second magnetic field reading when in the second position; and, a control module operably connected to the magnetic sensor and configured for controlling the electric device to operate in at least one of a first speed and a second speed by reference to an output of the magnetic sensor indicative of the sensed first magnetic field reading and the second magnetic field reading respectively.

Abstract: The present invention is related to a sensor. In particular, the present invention is related to a dual-cavity pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a cap, a substrate and a base connected together. A recess is formed on the cap. The recess forms an upper sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the upper sealed cavity. A recess is formed on the base. The recess forms a lower sealed cavity with the substrate. The present pressure sensor is more immune to temperature effects.

Abstract: A polysilicon thin film transistor (TFT) structure includes a substrate, a buffer layer covering the substrate, an island shaped semiconductor layer positioned on the buffer layer, a gate isolation layer covering the island shaped semiconductor layer, a gate positioned on the gate isolation layer, a passivation layer positioned on the gate and the gate isolation layer, and a source and a drain positioned on the passivation layer. The island shaped semiconductor layer is formed with a process that includes forming a polysilicon thin film on the substrate and implementing silicon self-ion implantation to the polysilicon thin film with a dosage and an energy level that prevent the polysilicon thin film from being decrystallized. The silicon self-ion implanted polysilicon thin film is further subjected to photolithography and ion doping to form the island shaped semiconductor layer with ion doping areas.

Abstract: The present invention is related to a sensor. In particular, the present invention is related to a pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a substrate and a cap connected together. A recess is formed on the cap. The recess forms a sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the sealed cavity. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

Abstract: An electrical switch unit for use with an electrical device to control operation of a DC motor of the electrical device, the electrical switch unit comprising: a housing which houses a pair of electrical switching contacts, and, an actuator operably connected with at least one of the pair of electrical switching contacts, the actuator being configured for movement relative to the pair of electrical switching contacts so as to arrange the pair of electrical switching contacts into at least one of a closed configuration wherein power is able to be supplied from the DC power source to the DC motor via the pair of electrical switching contacts, and, an opened configuration wherein power is not able to be supplied from the DC power source to the DC motor via the pair of electrical switching contacts; a signaling module associated with the electrical switch unit comprising signaling circuitry for sensing the movement of the actuator and outputting a signaling module signal indicative of the sensed movement or posit

Abstract: Disclosed is a building frame structure having an edge beam and a construction method thereof. The frame structure includes: a main frame structure and a cantilever beam provided outside of the main frame structure, a beam supported by the cantilever beam, and an outer floor disposed between the main frame structure and the edge beam. The edge beam and the cantilever beam are preforms reserved with exposed reinforcing bars, respectively. The edge beam is provided thereon with a vertical sideboard and a temporary safety rail. The cantilever beam is a beam-shell structure provided with an inner recess. The outer floor is a laminated plate, a lower part of which is a preformed plate. The preformed plate, the edge beam, and the cantilever beam are connected to each other by concrete cast in situ at respective top portions thereof.

Abstract: The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (1), and forming the polysilicon thin film (3) on the substrate (1), and a thickness of the polysilicon thin film (3) accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (3), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film.

Abstract: An electrical switch includes a fixed electrical contact; a movable electrical contact which is moveable relative to thereto between an ON position in contact with and, an OFF position out of contact with, the fixed electrical contact; a contact mover movably coupled to a terminal member moveable relative thereto so as to move the movable electrical contact between the ON and OFF positions; a biasing member coupling the contact mover and the terminal member together such that said biasing member acts upon the contact mover as the contact mover moves the movable electrical contact relative to the fixed electrical contact between the ON and OFF positions; wherein in the ON position, electrical current flows along a path comprising the terminal member, contact mover and movable electrical contact in series, and, an electrical insulation member arranged in series with the biasing member between the contact mover and the terminal member.

Abstract: Aspects describe a vertical metal-oxide thin-film transistor with multiple-junction channel and a method to fabricate the same. In one example, the vertical transistor comprises a substrate, an interconnecting electrode and source and drain electrodes separated by a spacer. The vertical transistor also includes a metal oxide active layer formed over the interconnecting electrode and the source and drain electrodes and adjacent to the interconnecting electrode, the spacer, and the source and drain electrodes. Further, the vertical transistor includes a gate stack adjacent to the metal oxide active layer and a multiple-junction channel region provided within the metal oxide active layer adjacent to the gate stack.

Abstract: The present invention is related to a sensor. In particular, the present invention is related to a MEMS strain gauge die and its fabrication process. The MEMS strain gauge die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present strain gauge die is more immune to temperature effects. It is especially suitable for operating in a high temperature environment and is capable of delivering accurate and reliable strain measurements at low cost.

Abstract: The present invention relates to a novel class of benzimidazolyl/imidazolyl phosphine ligands, methods of preparing such ligands via a simple one-pot protocol, and applications of the ligands in catalytic reactions.

Abstract: The present invention relates to a MEMS pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a MEMS pressure sensor die is provided. The pressure sensor die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

Abstract: A method of fabricating a hybrid organic-inorganic halide perovskite film includes depositing a precursor layer onto a substrate, the precursor layer comprising metal halide, placing an organic source-material layer onto a boat, the organic source-material layer comprising an organic cation, and annealing the precursor layer and the organic source-material layer in a vacuum chamber enclosed in a constrained volume.

Abstract: This disclosure relates generally to the three-dimensional (3D) integrated thin-film transistors (TFTs) with silicon and metal-oxide (MO) semiconductors as the active layers. In one or more embodiments, an apparatus is provided that comprises a first transistor comprising a silicon active layer, and a second transistor comprising a metal oxide active layer. The second transistor is vertically stacked on the first transistor, and the first transistor and the second transistor share a gate electrode formed between the silicon active layer and the metal oxide active layer. With these embodiments, the gate electrode corresponds to a top gate of the first transistor and a bottom gate of the second transistor.

Abstract: An apparatus is provided that includes a substrate and source and drain regions within an annealed active layer having resulted from an annealing of an active layer comprising metal-oxide and formed on the substrate, and an impermeable layer over the source and drain regions of the annealed active layer, wherein the annealing resulting in the annealed active layer was performed with the impermeable layer over portions of the active layer corresponding to the source and drain regions, thereby resulting in a reduction of a resistivity of the source and drain regions of the annealed active layer relative to the active layer. In another aspect, a junctionless transistor is provided wherein the entire active area has a low resistivity based on annealing of an active layer including metal oxide while uncovered or at least partially covered with layers of various gas permeability under oxidizing or non-oxidizing conditions.