Abstract: A method of producing an aluminum film on a substrate, from which very narrow aluminum conductor tracks can be created that are highly resistant to electromigration and/or stress migration. The substrate with the polycrystalline aluminum film is cooled in an oven in a controlled fashion from a target temperature to a final temperature such that energetically stable Al.sub.2 Cu-.theta.-phases are formed directly among the individual aluminum grains in the aluminum film. The cooling is controlled such that the instantaneous temperature passes through a predetermined temperature profile. Within the range of 320.degree. C. to 200.degree. C., the cooling gradient is less than 6.degree. C. per hour.

Abstract: In a semiconductor assembly with a solder material layer and a method for soldering the semiconductor assembly, a silicon semiconductor body with a diffusion barrier layer is provided with a solder material layer, preferably a tin layer. The semiconductor body is then applied to a metal carrier plate and is directly soldered to the carrier plate by heating to temperatures to above 250.degree. C., i.e. without further additions.