Abstract: In accordance with an alternative embodiment of the present invention, a method for forming a semiconductor device includes applying a paste over a semiconductor substrate, and forming a ceramic carrier by solidifying the paste. The semiconductor substrate is thinned using the ceramic carrier as a carrier.

Abstract: A method of manufacturing an electronic device may include: forming at least one electronic component in a substrate; forming a contact pad in electrical contact with the at least one electronic component; wherein forming the contact pad includes: forming a first layer over the substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface, wherein the second layer has a lower porosity than the first layer.

Abstract: A semiconductor device includes a semiconductor die that having a conductive structure. A metal structure is electrically connected to the conductive structure and contains a first metal. An auxiliary layer stack is sandwiched between the conductive structure and the metal structure and includes an adhesion layer that contains a second metal. The auxiliary layer stack further includes a metal diffusion barrier layer between the adhesion layer and the conductive structure. The adhesion layer contains the first metal and a second metal.

Abstract: In various embodiments, a die is provided. The die may include a die body, and at least one of a front side metallization structure on a front side of the die body and a back side metallization structure on a back side of the die body such that the die is plane or includes a positive radius of curvature at a die attach process temperature range.

Abstract: A method of separating individual dies of a semiconductor wafer includes forming a metal layer on a first surface of a semiconductor wafer, the semiconductor wafer including a plurality of dies, separating the plurality of dies from one another, and electrical discharge machining the metal layer into individual segments each of which remains attached to one of the dies. A corresponding semiconductor die produced by such a method is also provided.

Abstract: A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.

Abstract: An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided.

Abstract: A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.

Abstract: Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.

Abstract: A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.

Abstract: In accordance with an alternative embodiment of the present invention, a method for forming a semiconductor device includes applying a paste over a semiconductor substrate, and forming a ceramic carrier by solidifying the paste. The semiconductor substrate is thinned using the ceramic carrier as a carrier.

Abstract: A semiconductor device includes a semiconductor chip including a first main face and a second main face. The second main face is the backside of the semiconductor chip. The second main face includes a first region and a second region. The second region is a peripheral region of the second main face and the level of the first region and the level of the second region are different. The first region may be filled with metal and may be planarized to the same level as the second region.

Abstract: A method for producing a metal layer on a wafer is described. In one embodiment the method comprises providing a semiconductor wafer including a coating, printing a metal particle paste on the semiconductor wafer thereby forming a metal layer and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven.

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract: A method for producing a metal layer on a wafer is described. In one embodiment the method comprises providing a semiconductor wafer including a coating, printing a metal particle paste on the semiconductor wafer thereby forming a metal layer and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven.

Abstract: A method of separating individual dies of a semiconductor wafer includes forming a metal layer on a first surface of a semiconductor wafer, the semiconductor wafer including a plurality of dies, separating the plurality of dies from one another, and electrical discharge machining the metal layer into individual segments each of which remains attached to one of the dies. A corresponding semiconductor die produced by such a method is also provided.

Abstract: A semiconductor device includes a trench transistor cell array in a silicon semiconductor body with a first main surface and a second main surface opposite to the first main surface. A main lateral face of the semiconductor body between the first main surface and the second main surface has a first length along a first lateral direction parallel to the first and second main surfaces. The first length is equal or greater than lengths of other lateral faces of the semiconductor body. The trench transistor cell array includes predominantly linear gate trench portions. At least 50% of the linear gate trench portions extend along a second lateral direction or perpendicular to the second lateral direction. An angle between the first and second lateral directions is in a range of 45°±15°.

Abstract: Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.

Abstract: A semiconductor device includes a trench transistor cell array in a silicon semiconductor body with a first main surface and a second main surface opposite to the first main surface. A main lateral face of the semiconductor body between the first main surface and the second main surface has a first length along a first lateral direction parallel to the first and second main surfaces. The first length is equal or greater than lengths of other lateral faces of the semiconductor body. The trench transistor cell array includes predominantly linear gate trench portions. At least 50% of the linear gate trench portions extend along a second lateral direction or perpendicular to the second lateral direction. An angle between the first and second lateral directions is in a range of 45°±15°.

Abstract: A semiconductor device may include: a barrier layer; an adhesion layer disposed over the barrier layer; a metallization layer disposed over the adhesion layer, wherein the metallization layer is part of a final metallization level of the semiconductor device.