Patents by Inventor Manijeh Razeghi

Manijeh Razeghi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9917418
    Abstract: Monolithic, wavelength-tunable QCL devices are provided which comprise a substrate, an array of QCLs formed on the substrate and an optical beam combiner formed on the substrate electrically isolated from the array of QCLs. In embodiments, the QCL devices are configured to provide laser emission in the range of from about 3 ?m to about 12 ?m, a wavelength tuning range of at least about 500 cm?1, and a wavelength tuning step size of about 1.0 nm or less.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: March 13, 2018
    Assignee: Northwestern University
    Inventor: Manijeh Razeghi
  • Publication number: 20170194765
    Abstract: Monolithic, wavelength-tunable QCL devices are provided which comprise a substrate, an array of QCLs formed on the substrate and an optical beam combiner formed on the substrate electrically isolated from the array of QCLs. In embodiments, the QCL devices are configured to provide laser emission in the range of from about 3 ?m to about 12 ?m, a wavelength tuning range of at least about 500 cm?1, and a wavelength tuning step size of about 1.0 nm or less.
    Type: Application
    Filed: October 31, 2016
    Publication date: July 6, 2017
    Inventor: Manijeh Razeghi
  • Patent number: 7692183
    Abstract: The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: April 6, 2010
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Patent number: 7682865
    Abstract: The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: March 23, 2010
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Patent number: 7638791
    Abstract: An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: December 29, 2009
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Publication number: 20090302309
    Abstract: The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.
    Type: Application
    Filed: June 10, 2008
    Publication date: December 10, 2009
    Inventor: Manijeh Razeghi
  • Publication number: 20090224227
    Abstract: A type-II InAs/GaSb superlattice photodiode for optimizing quantum efficiency without reducing the differential resistance area product at zero bias. The photodiode features a GaSb: Be buffer, a In/GaSb: Be superlattice, a p-type doped ? region, a InAs: Si/GaSb doped region, and a InAs: Si doped contact layer. The In/GaSb: Be superlattice and InAs: Si/GaSb doped region each having a thickness about two times greater than the thickness of the GaSb: Be buffer. The photodiode in one embodiment featuring a composition of InAs and GaSb with InSb forced interfaces, the composition suitable for being grown on GaSb wafers with a molecular beam epitaxy reactor. A method of optimizing quantum efficiency in a type-II InAs/GaSb superlattice photodiode having a 100% cutoff wavelength around 12 ?m is further provided herewith.
    Type: Application
    Filed: March 6, 2008
    Publication date: September 10, 2009
    Inventor: Manijeh Razeghi
  • Publication number: 20090224229
    Abstract: The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.
    Type: Application
    Filed: March 7, 2008
    Publication date: September 10, 2009
    Inventor: Manijeh Razeghi
  • Publication number: 20090224228
    Abstract: An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 10, 2009
    Inventor: Manijeh Razeghi
  • Patent number: 7001794
    Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: February 21, 2006
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Publication number: 20050116260
    Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.
    Type: Application
    Filed: October 6, 2004
    Publication date: June 2, 2005
    Inventor: Manijeh Razeghi
  • Patent number: 6864552
    Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.
    Type: Grant
    Filed: January 21, 2003
    Date of Patent: March 8, 2005
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Publication number: 20040142504
    Abstract: The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.
    Type: Application
    Filed: January 21, 2003
    Publication date: July 22, 2004
    Applicant: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Patent number: 6750075
    Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: June 15, 2004
    Inventor: Manijeh Razeghi
  • Patent number: 6610553
    Abstract: An Al-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: August 26, 2003
    Inventor: Manijeh Razeghi
  • Patent number: 6605485
    Abstract: A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.
    Type: Grant
    Filed: May 16, 2002
    Date of Patent: August 12, 2003
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Patent number: 6577659
    Abstract: The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVD<MBE or a combination of the two growth techniques. The Double Heterostructure is prepared as InAsSb/InAsSbP/AlAsSb/InAs. This structure is etched to form mesas and contacts are applied. The MWIR laser of the subject invention may be used in various optoelectric and electronic devices such as detectors, transistors, and waveguide.
    Type: Grant
    Filed: July 17, 2000
    Date of Patent: June 10, 2003
    Assignee: MP Technologies, L.L.C.
    Inventor: Manijeh Razeghi
  • Patent number: 6570179
    Abstract: A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.
    Type: Grant
    Filed: April 13, 2000
    Date of Patent: May 27, 2003
    Assignee: MP Technologies, LLC
    Inventor: Manijeh Razeghi
  • Publication number: 20030005880
    Abstract: A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.
    Type: Application
    Filed: May 28, 2002
    Publication date: January 9, 2003
    Inventor: Manijeh Razeghi
  • Publication number: 20020195677
    Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.
    Type: Application
    Filed: May 28, 2002
    Publication date: December 26, 2002
    Inventor: Manijeh Razeghi