Patents by Inventor Manijeh Razeghi

Manijeh Razeghi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Group III-V compound based optoelectronic device on silicon substrate
    Patent number: 4897699
    Abstract: Disclosed is an optoelectronic device implanted on a silicon substrate and comprising, in particular, on this substrate, a set of matching layers on which there is made a first confinement layer based on indium phosphide, an active layer based on Ga.sub.x In.sub.1-x As.sub.1-y and a second active layer of indium phosphide.
    Type: Grant
    Filed: September 21, 1988
    Date of Patent: January 30, 1990
    Assignee: Thomson-CSF
    Inventors: Manijeh Razeghi, Robert Blondeau, Franck Omnes, Martin Defour, Gerard Doriath
  • Method for the manufacture of a mechanically shielding layer for a magnetic read/write head, and magnetic read/write head using this method
    Patent number: 4849842
    Abstract: The invention pertains to a method for the manufacture of a magnetic head, and a magnetic head in which this method is applied, a method which, after the head is manufactured, provides for a stage for making a mechanically shielding layer of a material such that the bonding coefficient is high, i.e. such that the chemical valencies with respect to the material forming the head is close to one.The invention can be applied in particular, to the manufacture of magnetic heads in thin layers for reading/writing on magnetic tapes.
    Type: Grant
    Filed: April 10, 1987
    Date of Patent: July 18, 1989
    Assignee: Thomson-CSF
    Inventors: Paul L. Meunier, Manijeh Razeghi, Jean L. Rolland
  • Linear magnetoresistance-effect sensor with semiconductor and ferrimagnetic layers and its application in a magnetic-domain detector
    Patent number: 4827218
    Abstract: A magnetoresistance-effect sensor for use in a magnetic domain detector for reading data recorded on magnetic tapes or in magnetic bubble memories mainly consists of a layer of semiconductor material which carries a layer of ferrimagnetic material on one face and at least one pair of electrodes disposed along an axis OX on the other face, the layer of ferrimagnetic material being placed in proximity to the magnetic data carrier. A magnetic data item thus induces a magnetic field in the layer of semiconductor material in a direction OY perpendicular to the axis OX of the pair of electrodes.
    Type: Grant
    Filed: January 15, 1988
    Date of Patent: May 2, 1989
    Assignee: Thomson-CSF
    Inventors: Paul L. Meunier, Ernst Huijer, Manijeh Razeghi, Jean C. Lehureau
  • Integrated head for the measurement of magnetic fields and method of making this head
    Patent number: 4823083
    Abstract: A magnetic field measuring head comprises the following elements integrated into one and the same substrate: a light source, a light guide insensitive to the magnetic field, a layer of magnetic material which, when plunged into a magnetic field to be measured, causes the rotation of the plane of polarization of the light coming from the source, and a device to measure the rotation of the plane of polarization of the light.
    Type: Grant
    Filed: September 4, 1987
    Date of Patent: April 18, 1989
    Assignee: Thomson-CSF
    Inventors: Paul-Louis Meunier, Gerard Doriath, Manijeh Razeghi
  • III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices
    Patent number: 4793872
    Abstract: A component of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter consists of an alternate succession of layers of a first type and layers of a second type deposited on the substrate. The lattice parameter of the first type of layers is substantially matched with the lattice parameter of the substrate. In the case of the second type of layers, the lattice parameter is matched and even equal to that of the first type of layers. A component having a lattice parameter equal to that of the second type of layers is formed on the last layer of the second type. Moreover, the energy gaps of the two types of layers are different.
    Type: Grant
    Filed: March 4, 1987
    Date of Patent: December 27, 1988
    Assignee: Thomson-CSF
    Inventors: Paul L. Meunier, Manijeh Razeghi