Abstract: InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer. Further, the active layer of a DH structure can be doped with a p-type dopant, so that the dopant level of the active layer is at least one magnitude less than the dopant level of either confinement layer and the n-p junction is within the active layer and a higher power level and better efficiency is observed. A perfect lattice matching of the InAsSb contact layers and InAsSbP confinement layer of a DH structure is found to minimize the dislocation density at the InAsSb/InAsSbP interface. Decreasing the band-offset between the active layer and the confinement layers increases the brightness of the laser.

Abstract: The subject invention includes a far-infrared detector based on InSbBix1-x which operates 12 .mu.m at room temperature with an energy band gap as low as 0.13 eV (9.3 .mu.m) at 77K and 12 .mu.m at 300K. The subject invention may be prepared by growing epitaxial layers of InSbBi on InSb which is grown on a suitable substrate. The wavelength of absorption may be controlled through the variation of the Bi concentration in the InSbBi active layer.

Abstract: A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.

Abstract: The subject invention involves the p-type doping of Al.sub.x Ga.sub.1-x N thin films with a III-nitride composition and specifically a {Al.sub.x Ga.sub.1-x N/GaN} short-period superlattice structure of less than 5000 .ANG. thickness in total in which both the barriers and the wells are p-type doped with Mg.

Abstract: A method for passivating a III-V semiconductor surface with Al.sub.2 O.sub.3 is disclosed. Sb-based semiconductor lasers may be etched with a solution of HCl:HNO.sub.3 :H.sub.2 O for a more uniform surface.

Abstract: A buried-ridge structure of the quaternary/tertiary structures of In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y /InGaP (x and y<1) are grown on a GaAs substrate by Low Pressure Metalorganic Chemical Vapor Deposition (LP-MOCVD) in a two-step process. The process comprises steps of growing and doping the requisite epitaxial layers, etching these layers so that stripes or mesas of material remain and then regrowing the material by gas molecular beam epitaxy (GSMBE). The structures are then processed into devices.

Abstract: An intermetallic compound semiconductor thin film comprises thin film made of either InSb or GaAs heterostructure on a silicon substrate. Preferably, the thin film is grown by a Molecular Beam Epitaxy method.

Abstract: A buried-ridge structure of the quaternary/tertiary structures of In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y /InGaP (x and y<1) are grown on a GaAs substrate by Low Pressure Metalorganic Chemical Vapor Deposition (LP-MOCVD) in a two-step process. The process comprises steps of growing and doping the requisite epitaxial layers, etching these layers so that stripes or mesas of material remain and then regrowing the material by gas molecular beam epitaxy (GSMBE). The structures are then processed into devices.

Abstract: InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

Abstract: The subject invention comprises a plurality of serially connected small volume photovoltaic devices. A single device includes a first layer of n.sup.+ doped InSb, a second layer of doped IDAs.sub.1-x Sb.sub.x and a third layer of p.sup.+ doped InSb. From 2-50 of these devices are grown by either a low-pressure MOCVD or MBE process to a maximum thickness of about 10 .mu.m. Alternatively, the first layer may be n.sup.+ doped In.sub.y Ga.sub.1-y, Sb the second layer p.sup.+ doped InAs.sub.1-x Sb.sub.x and the third layer In.sub.y Ga.sub.1-y Sb, repeated to a maximum thickness of 10 m.

Abstract: In the method of the subject invention, a coating of AlN or a coating of SiC is grown in situ in the MOCVD or MOMBE reaction chamber to cover all surfaces therein. There is thus formed a stable layer on these surfaces that prevents oxygen and other impurities originally within the reaction chamber from reacting with the semiconducting layer to be grown.

Abstract: Semiconductor films of the formula (InP).sub.1-x (TlP.sub.3).sub.x on InP substrates which cover the bandgap of 2-12 .mu.m for use with long wavelength infrared detector and laser applications are disclosed.

Abstract: An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.

Abstract: Semiconductor films of the formula (InP).sub.1-x (TlP.sub.3).sub.x on InP substrates which cover the bandgap of 2-12 .mu.m for use with long wavelength infrared detector and laser applications are disclosed.

Abstract: Diode lasers of the formula GaInP/InGaAsP on GaAs substrates which operate at powers up to 5.3 W with emitting apertures of 100 microns are disclosed. By varying compositions of the active layer and by employing strained layer quantum wells, InGaAsP diode lasers are fabricated over the wavelength range of 700 to 1100 nm.

Abstract: High power diode lasers of the formula GaInP/InGaAsP on GaAs substrates which operate at powers up to 5.3W with increased power levels and efficiencies are disclosed. By increasing the thickness of the optical cavity of the heterostructure and by doping to a level of 10.sup.20 atoms/cm.sup.3 the cap layer surface with a p-type dopant such as diethyl zinc, increased power at an increased efficiency level is observed.

Abstract: A method for the making of an optoelectronic device comprising at least one quantum well, the barriers of which are made of GaInP and the well of which is made of GaAs, is carried out by the interdiffusion of elements between barriers and quantum wells in such a way that there is a migration of at least indium elements from a barrier to the quantum well. The method can be applied to the making of quantum well lasers, photodetectors and optical guides.

Abstract: A device for use as a laser includes a component (C) of semiconductor material formed on a substrate (1) having a different lattice parameter. The substrate (1) is covered with a silicon layer (2) which is in turn covered with a matching superlattice (3) on which the component (C) is formed. The device is more particularly applicable to a component formed on diamond.

Abstract: The invention concerns an optical guiding structure comprising, between two optical confinement layers, an optical guiding layer and an optical guiding element separated from each other by a layer for stopping chemical attack, to obtain by epitaxy methods and by chemical attack, a guiding element of which it is possible to precisely calibrate the thickness obtain surfaces of excellent quality and perform cutting out with sharpness, the invention being applicable to producing lasers and optical phase modulators.

Abstract: In a method for making a thin-film magnetic head, there are stages for depositing hardening material in the plane of the magnetic films and in the neighbourhood of the active surface of the magnetic head. The invention also relates to a magnetic head made according to this method. The invention can be applied to thin-film magnetic heads for magnetic tape read/write devices.