Abstract: Collision detection systems for detecting read-write collisions in memory systems after word line activation are disclosed. In one aspect, a collision detection system is provided. The collision detection system includes a collision detection circuit for each bit cell row of memory array. Each collision detection circuit is configured to receive a write and read word line signal corresponding to the bit cell row. The collision detection circuit is configured to detect a write and read word line signal pair being active for a write and read operation for the same bit cell row. The collision detection circuit is configured to generate a collision detection signal to notify clients associated with the memory system that a read-write collision occurred. Detecting the read-write collisions after read word line activation reduces or avoids overhead delays in the read path, as opposed to detecting read-write collisions prior to activation of the read word line.

Abstract: Disclosed systems and methods relate to comparison of a first number and a second number. A comparator receives first and second single-ended inputs (i.e., not represented in differential format), which may be n-bits wide, wherein the first input is an inverted version of the first number and the second input is a true version of the second number. A partial match circuit is implemented to generate a partial match output based only on the first single-ended input and the second single-ended input. A partial mismatch circuit is implemented to generate a partial mismatch output based only on the first single-ended input and the second single-ended input. A comparison output circuit is implemented to generate a comparison output of the first and second numbers based on the partial match output and the partial mismatch output.

Abstract: Voltage level shifters employing preconditioning circuits are disclosed. Related systems and methods are also disclosed. In one aspect, voltage level shifter is configured to generate a voltage level shifted non-complement output signal and complement output signal corresponding to non-complement input signal and complement input signal, respectively. First pull-up circuit is configured to generate complement output signal in response to non-complement input signal transitioning to logic low voltage. First pull-down circuit is configured to generate non-complement output signal in response to complement input signal transitioning to logic high voltage. First preconditioning circuit is configured to receive non-complement and complement output signals and generate and provide shifted voltage signal to complement output in response to non-complement output signal transitioning to logic low voltage. This allows the complement output signal to transition to the shifted voltage more quickly.

Abstract: Provided are methods and apparatus for enabling selective push processing during design and fabrication of an integrated circuit to improve performance of selected circuits of the integrated circuit. An exemplary method includes identifying a critical portion of an integrated circuit layout that defines a functional element having a critical operating frequency requirement and designing a subcircuit in the critical portion to enable performing a speed push process to increase performance of the subcircuit. The method can also include identifying at least one of a power supply node, a clock supply node, and an interface node at a boundary between the critical portion and a portion of the integrated circuit that is outside of the critical portion. The critical portion can be designed with a power domain that is independent of the portion of the integrated circuit that is outside of the critical portion.

Abstract: Power rail control systems that include power multiplexing circuits that include cross-current conduction protection are disclosed. Power multiplexing circuit includes supply selection circuits each coupled between a respective supply power rail and an output power rail coupled to a powered circuit. To maintain power to the powered circuit during switching coupling of the output power rail, but while also avoiding current cross-conduction path between supply power rails, diode drop control circuits are provided in supply selection circuits. In diode drop operation mode, the diode drop control circuit associated with a higher voltage supply power rail is configured to regulate voltage supplied by such supply power rail to the output power rail to power the powered circuit. A current cross-conduction path is not created, because diode drop control circuits associated with lower voltage supply power rails are reverse biased to prevent current from flowing through their associated supply selection circuits.

Abstract: According to an aspect of the present invention, a content server enhances content mediated engagements, by first enabling a user to specify a content collection containing a set of contents according to a specific/desired sequence, and then storing a data indicating the collection. The set of contents are selected from contents (or portions thereof) maintained in a repository. In response to receiving during a content mediated engagement, a request of the stored content collection, the content server then provides the set of contents according to the specific sequence. The content server also facilitates the same content (maintained in repository) to be included and accordingly provided as part of different content collections.

Abstract: Collision detection systems for detecting read-write collisions in memory systems after word line activation are disclosed. In one aspect, a collision detection system is provided. The collision detection system includes a collision detection circuit for each bit cell row of memory array. Each collision detection circuit is configured to receive a write and read word line signal corresponding to the bit cell row. The collision detection circuit is configured to detect a write and read word line signal pair being active for a write and read operation for the same bit cell row. The collision detection circuit is configured to generate a collision detection signal to notify clients associated with the memory system that a read-write collision occurred. Detecting the read-write collisions after read word line activation reduces or avoids overhead delays in the read path, as opposed to detecting read-write collisions prior to activation of the read word line.

Abstract: Web-based email systems are enabled to synchronize conversations and conversation properties. Conversations are enumerated to new clients providing folder-specific and global conversation information. After receiving the initial conversation information, clients maintain a conversation state, which is used in updating clients from a web service store through a conversation synchronization command employing an internal application programming interface within the email service.

Abstract: Systems and methods relate to a matchline receiver of a content-addressable memory (CAM). A matchline of the CAM, which provides a hit/miss indication for a search operation of a data word is provided to the matchline receiver. The matchline receiver comprises a retention circuit to provide a hit/miss output, wherein the retention circuit retains, at the hit/miss output, the hit/miss indication provided by the matchline during a first clock phase of a clock, even if the hit/miss indication provided by the matchline is modified by a write operation or an invalidation operation during the first clock phase.

Abstract: Systems and methods for synchronizing conversation data between a client and a server in a networked computing environment. A data structure associated with an e-mail conversation is encoded and shuttled between the client and the server. When received at the server, the data structure is analyzed to determine changes within the e-mail conversation. The data structure is subsequently modified to reflect or include only those changes to minimize the amount of information transferred between the server and client.

Abstract: A power harvesting circuit includes a new transmitter topology that ensures that no junction of thin oxide transistors forming the power harvesting circuit will experience a voltage across junctions of the transistors that is more than a maximum tolerable junction voltage. A supplemental power feed circuit operates to provide a supplemental feed current to components in a transmitter circuit when power harvested from a receiver circuit is insufficient to adequately power these components of the transmitter circuit, which may occur during high frequency operation of communications channels coupling the transmitter and receiver circuits. The supplemental power feed circuit also operates to sink a shunt current when power harvested from the receiver circuit is more than is needed to power the components in the transmitter circuit.

Abstract: Systems and methods for synchronizing conversation data between a client and a server in a networked computing environment. A data structure associated with an e-mail conversation is encoded and shuttled between the client and the server. When received at the server, the data structure is analyzed to determine changes within the e-mail conversation. The data structure is subsequently modified to reflect or include only those changes to minimize the amount of information transferred between the server and client.

Abstract: A power harvesting circuit includes a new transmitter topology that ensures that no junction of thin oxide transistors forming the power harvesting circuit will experience a voltage across junctions of the transistors that is more than a maximum tolerable junction voltage. A supplemental power feed circuit operates to provide a supplemental feed current to components in a transmitter circuit when power harvested from a receiver circuit is insufficient to adequately power these components of the transmitter circuit, which may occur during high frequency operation of communications channels coupling the transmitter and receiver circuits. The supplemental power feed circuit also operates to sink a shunt current when power harvested from the receiver circuit is more than is needed to power the components in the transmitter circuit.

Abstract: Systems and methods for detecting and suppressing crowbar currents in memory arrays. A dummy read is implemented to prevent crowbar currents in the case of simultaneous read-write collisions in a static random access memory (SRAM) array having cross-coupled bitline keepers. When a simultaneous read and write operation to a first entry of the memory array is detected, the read operation to the first entry is suppressed and a dummy read operation to a second entry of the memory array is performed. The write operation to the first entry is allowed to proceed undisturbed.

Abstract: In low power CPUs, the best way to reduce power is to reduce supply voltage. Most low voltage memory arrays use an 8T cell, which has read stability immunity, in order to operate at low voltages. An embodiment of the disclosure determines when a write wordline (WWL) rises. If the determination shows that the WWL has risen, at least one of the plurality of p-channel field effect transistors (pFETS) is disconnected from a voltage supply, and the at least one plurality of n-channel field effect transistors (nFET) passgate transistors are opened.

Abstract: Techniques for adaptive thread scheduling on a plurality of cores for reducing system energy are described. In one embodiment, a thread scheduler receives leakage current information associated with the plurality of cores. The leakage current information is employed to schedule a thread on one of the plurality of cores to reduce system energy usage. On chip calibration of the sensors is also described.

Abstract: Decoded 2n-bit bitcells in memory for storing decoded bits, and related systems and methods are disclosed. In one embodiment, a decoded 2n-bit bitcell containing 2n state nodes is provided. Each state node includes storage node to store decoded bit. Storage node provides bit to read bitline, coupled to decoded word output. Each state node includes active decoded bit input coupled to storage node that receives decoded bit from decoded word to store in storage node in response to write wordline. State node comprised of 2n?1 passive decoded bit inputs, each coupled to one of 2n?1 remaining storage nodes. 2n?1 passive decoded bit inputs receive 2n?1 decoded bits not received by active decoded bit input. State node includes logic that receives 2n?1 decoded bits. Logic retains decoded bit, provides it to passive decoded bit output. Passive decoded word output is coupled to storage node to store decoded bit in storage node.

Abstract: A system and method for expeditious operational timing signoff of a circuit design through a timing analysis and subsequent corrective or remedial optimization is performed with the goal of correlating timing between the physical implementation corrective optimizer module and the timing analysis module to reduce iterations therebetween. A physical optimizer in the correction module is imparted with knowledge of the physical implementation of the design to allow for legal, non-conflicting placement of corrective buffers or resizing of gates in accordance with the physical implementation data of the circuit design.

Abstract: Systems and method for reducing leakage currents and power consumption in a memory array comprising memory cells, such as 8T SRAM cells. The memory array includes logic for dynamically placing a group of memory cells in the memory array in a reduced power state during sleep mode or inactive states of the group of memory cells, such that leakage parts are effectively eliminated. The memory array further includes logic for dynamically enabling a selected group of the memory cells during read or write access operations on the selected memory cells, wherein corresponding read or write bitlines are precharged before and after the respective rear or write operations.

Abstract: Systems and methods for detecting and improving writeability of a static random access memory (SRAM) cell. A bias voltage value corresponding to an operating condition, such as, a process, a voltage, or a temperature operation condition that indicates a cell write failure condition of an external SRAM array comprising the SRAM cell is generated. This bias voltage value is applied to word lines of SRAM cells in a model SRAM array. A first delay for a trigger signal rippled through the model SRAM array is detected and compared to a reference delay. A write assist indication is generated if the first delay is greater than or equal to the reference delay. Based on the write assist indication, a write assist is provided to the SRAM cell.