Abstract: Systems and methods for detecting and suppressing crowbar currents in memory arrays. A dummy read is implemented to prevent crowbar currents in the case of simultaneous read-write collisions in a static random access memory (SRAM) array having cross-coupled bitline keepers. When a simultaneous read and write operation to a first entry of the memory array is detected, the read operation to the first entry is suppressed and a dummy read operation to a second entry of the memory array is performed. The write operation to the first entry is allowed to proceed undisturbed.

Abstract: In low power CPUs, the best way to reduce power is to reduce supply voltage. Most low voltage memory arrays use an 8T cell, which has read stability immunity, in order to operate at low voltages. An embodiment of the disclosure determines when a write wordline (WWL) rises. If the determination shows that the WWL has risen, at least one of the plurality of p-channel field effect transistors (pFETS) is disconnected from a voltage supply, and the at least one plurality of n-channel field effect transistors (nFET) passgate transistors are opened.

Abstract: Techniques for adaptive thread scheduling on a plurality of cores for reducing system energy are described. In one embodiment, a thread scheduler receives leakage current information associated with the plurality of cores. The leakage current information is employed to schedule a thread on one of the plurality of cores to reduce system energy usage. On chip calibration of the sensors is also described.

Abstract: Decoded 2n-bit bitcells in memory for storing decoded bits, and related systems and methods are disclosed. In one embodiment, a decoded 2n-bit bitcell containing 2n state nodes is provided. Each state node includes storage node to store decoded bit. Storage node provides bit to read bitline, coupled to decoded word output. Each state node includes active decoded bit input coupled to storage node that receives decoded bit from decoded word to store in storage node in response to write wordline. State node comprised of 2n?1 passive decoded bit inputs, each coupled to one of 2n?1 remaining storage nodes. 2n?1 passive decoded bit inputs receive 2n?1 decoded bits not received by active decoded bit input. State node includes logic that receives 2n?1 decoded bits. Logic retains decoded bit, provides it to passive decoded bit output. Passive decoded word output is coupled to storage node to store decoded bit in storage node.

Abstract: A system and method for expeditious operational timing signoff of a circuit design through a timing analysis and subsequent corrective or remedial optimization is performed with the goal of correlating timing between the physical implementation corrective optimizer module and the timing analysis module to reduce iterations therebetween. A physical optimizer in the correction module is imparted with knowledge of the physical implementation of the design to allow for legal, non-conflicting placement of corrective buffers or resizing of gates in accordance with the physical implementation data of the circuit design.

Abstract: A head restraint assembly is provided to be mounted within a vehicle. A head restraint is supported by the cross member in a lateral direction and adapted to rotate about a lateral axis of the cross member. A fixed locking member is mounted within the head restraint. A latch is mounted to slide on the cross member between a first latch position engaged with the locking member and at a second latch position released from the fixed locking member. A lever is provided proximate the latch to move the latch between the first latch position and the second latch position. A motor is in communication with the lever such that the motor moves the lever to translate the latch from the first latch position to the second latch position. The head restraint is rotatable about the cross member when the latch is in the second latch position.

Abstract: Systems and method for reducing leakage currents and power consumption in a memory array comprising memory cells, such as 8T SRAM cells. The memory array includes logic for dynamically placing a group of memory cells in the memory array in a reduced power state during sleep mode or inactive states of the group of memory cells, such that leakage parts are effectively eliminated. The memory array further includes logic for dynamically enabling a selected group of the memory cells during read or write access operations on the selected memory cells, wherein corresponding read or write bitlines are precharged before and after the respective rear or write operations.

Abstract: Systems and methods for detecting and improving writeability of a static random access memory (SRAM) cell. A bias voltage value corresponding to an operating condition, such as, a process, a voltage, or a temperature operation condition that indicates a cell write failure condition of an external SRAM array comprising the SRAM cell is generated. This bias voltage value is applied to word lines of SRAM cells in a model SRAM array. A first delay for a trigger signal rippled through the model SRAM array is detected and compared to a reference delay. A write assist indication is generated if the first delay is greater than or equal to the reference delay. Based on the write assist indication, a write assist is provided to the SRAM cell.

Abstract: Systems and methods for selectively boosting word-line (WL) voltage in a memory cell array. The method relies several embodiments to minimize energy costs associated with WL boost scheme. One embodiment generates a transient voltage boost rather than supply a DC voltage boost. The transient boost generation may be controlled on a cycle basis and can be disabled when the array is not accessed. Another embodiment allows the system to generate the transient voltage boost locally, near a WL driver and only during the cycles when it is needed. Localized boost voltage generation reduces the load capacitance that needs to be boosted to higher voltage. Another embodiment efficiently distributes the transient boost to the WL drivers.

Abstract: Systems and methods for detecting and suppressing crowbar currents in memory arrays. A dummy read is implemented to prevent crowbar currents in the case of simultaneous read-write collisions in a static random access memory (SRAM) array having cross-coupled bitline keepers. When a simultaneous read and write operation to a first entry of the memory array is detected, the read operation to the first entry is suppressed and a dummy read operation to a second entry of the memory array is performed. The write operation to the first entry is allowed to proceed undisturbed.

Abstract: Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-out circuit in the SRAM. Applying a trigger signal to a word-line input port of the critical path, and comparing the output of the critical path to a reference-latch signal, provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.

Abstract: Web-based email systems are enabled to synchronize conversations and conversation properties. Conversations are enumerated to new clients providing folder-specific and global conversation information. After receiving the initial conversation information, clients maintain a conversation state, which is used in updating clients from a web service store through a conversation synchronization command employing an internal application programming interface within the email service.

Abstract: According to an aspect of the present invention, a content server enhances content mediated engagements, by first enabling a user to specify a content collection containing a set of contents according to a specific/desired sequence, and then storing a data indicating the collection. The set of contents are selected from contents (or portions thereof) maintained in a repository. In response to receiving during a content mediated engagement, a request of the stored content collection, the content server then provides the set of contents according to the specific sequence. The content server also facilitates the same content (maintained in repository) to be included and accordingly provided as part of different content collections.

Abstract: A memory cell includes a storage element, a write circuit coupled to the storage element and a read circuit coupled to the storage element. At least a portion of the storage element and at least a portion of the write circuit are fabricated using a thicker functional gate oxide and at least a portion of the read circuit is fabricated using a thinner functional gate oxide.

Abstract: Web-based email systems are enabled to synchronize conversations and conversation properties. Conversations are enumerated to new clients providing folder-specific and global conversation information. After receiving the initial conversation information, clients maintain a conversation state, which is used in updating clients from a web service store through a conversation synchronization command employing an internal application programming interface within the email service.

Abstract: Systems and methods for synchronizing conversation data between a client and a server in a networked computing environment. A data structure associated with an e-mail conversation is encoded and shuttled between the client and the server. When received at the server, the data structure is analyzed to determine changes within the e-mail conversation. The data structure is subsequently modified to reflect or include only those changes to minimize the amount of information transferred between the server and client.

Abstract: Systems and method for reducing leakage currents and power consumption in a memory array comprising memory cells, such as 8T SRAM cells. The memory array includes logic for dynamically placing a group of memory cells in the memory array in a reduced power state during sleep mode or inactive states of the group of memory cells, such that leakage parts are effectively eliminated. The memory array further includes logic for dynamically enabling a selected group of the memory cells during read or write access operations on the selected memory cells, wherein corresponding read or write bitlines are precharged before and after the respective rear or write operations.

Abstract: Systems and methods for selectively boosting word-line (WL) voltage in a memory cell array. The method relies several embodiments to minimize energy costs associated with WL boost scheme. One embodiment generates a transient voltage boost rather than supply a DC voltage boost. The transient boost generation may be controlled on a cycle basis and can be disabled when the array is not accessed. Another embodiment allows the system to generate the transient voltage boost locally, near a WL driver and only during the cycles when it is needed. Localized boost voltage generation reduces the load capacitance that needs to be boosted to higher voltage. Another embodiment efficiently distributes the transient boost to the WL drivers.

Abstract: Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) in response to process-voltage-temperature variations when needed. Embodiments include a critical path that simulates a typical memory cell and read-out circuit in the SRAM. Applying a trigger signal to a word-line input port of the critical path, and comparing the output of the critical path to a reference-latch signal, provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.

Abstract: Systems and methods for detecting and improving writeability of a static random access memory (SRAM) cell. A bias voltage value corresponding to an operating condition, such as, a process, a voltage, or a temperature operation condition that indicates a cell write failure condition of an external SRAM array comprising the SRAM cell is generated. This bias voltage value is applied to word lines of SRAM cells in a model SRAM array. A first delay for a trigger signal rippled through the model SRAM array is detected and compared to a reference delay. A write assist indication is generated if the first delay is greater than or equal to the reference delay. Based on the write assist indication, a write assist is provided to the SRAM cell.