Abstract: A data storage device includes a memory and a controller and may perform a method that includes updating, in the controller, a value of a particular counter of a set of counters in response to a read access to a particular region of the non-volatile memory that is tracked by the particular counter. Read accesses to a first region of the non-volatile memory are tracked by a first counter of the set of counters and read accesses to a second region of the non-volatile memory are tracked by a second counter of the set of counters. The method includes, in response to the value of the particular counter indicating that a count of read accesses to the particular region equals or exceeds a first threshold, initiating a remedial action to the particular region of the non-volatile memory.

Abstract: A method includes determining a programming step size for a word line of a memory in a data storage device. The programming step size is determined at least partially based on a count of memory elements of the word line to be programmed to a particular state.

Abstract: In a data storage device that includes a non-volatile memory, a method includes determining that a current error correction code page count (CEC) is at least as large as a target error correction code page count (TEC). The CEC is a page count of error correction code (ECC) pages of data read from the memory during a time period from a previous time to a particular time using a set of reference voltages. In response to the CEC being at least as large as the TEC, the method includes updating a subset of the set of reference voltages conditioned upon a difference between a current mean error count (CMEC) and a previous mean error count being at least as large as a target mean delta error. The CMEC is based on a count of read errors associated with the ECC pages read during the time period.

Abstract: A method includes, in a data storage device that includes a non-volatile memory, selecting an updated reference voltage as one of a reference voltage, a first alternate reference voltage and a second alternate reference voltage. The first alternate reference voltage and the second alternate reference voltage are calculated based on the reference voltage and based on a voltage increment. Selection of the updated reference voltage is based on a comparison of error counts, each error count associated with a unique one of the reference voltage, the first alternate reference voltage, and the second alternate reference voltage. The method includes resetting the reference voltage to the updated reference voltage, resetting the voltage increment to a reset voltage increment that is smaller than the voltage increment, and selecting an additional updated reference voltage based on the reset reference voltage and based on the reset voltage increment.

Abstract: A method in a data storage device including a memory and an error correction coding (ECC) engine. A first ECC page including a data block and first main ECC data is stored to the memory. The first main ECC data is usable by the ECC engine to correct errors in the first ECC page. A second ECC page including first additional ECC data is also stored to the memory. The first additional ECC data is usable by the ECC engine to correct errors in a single sub-block of multiple sub-blocks within the data block.

Abstract: A method includes decreasing a programming step size from a first value to a second value for a block of a memory device. The programming step size is decreased at least partially based on determining that an error count corresponding to the block satisfies a threshold.

Abstract: A method in a data storage device with a memory includes receiving bit values to be stored at a set of cells of the memory and interleaving the received bit values to form multiple interleaved groups of data bits according to an adjustable parameter. The method also includes writing the multiple interleaved groups of data bits to the set of cells.

Abstract: A method may be performed at a data storage device that includes a memory and a controller. The method includes providing user data to a variable-bit error correction coding (ECC) encoder. The ECC encoder generates a first set of parity bits. A first number of parity bits in the first set of parity bits is determined based on stored counts of read errors. The method also includes storing the user data and the first set of parity bits to a memory of the data storage device.

Abstract: A method includes, after data is stored at a data area of a memory device and error correction code (ECC) data corresponding to the data is stored at an ECC area corresponding to the data area, detecting a triggering condition. In response to detecting the triggering condition, the method also includes storing second ECC data in the ECC area, where the second ECC data includes redundant information for a first portion of the data area and storing third ECC data at the memory device. The third ECC data includes redundant information for a second portion of the data area.

Abstract: A method includes initiating a first decode operation of data at an error correction code (ECC) hard bit decoder in a data storage device that includes a controller and a memory. The method further includes, in response to the first decode operation indicating that the data is uncorrectable by the first decode operation, identifying one or more bits of the data that correspond to a disturb condition test pattern, changing a value of the one or more identified bits of the data to generate modified data, and initiating a second decode operation at the ECC hard bit decoder using the modified data.

Abstract: A method includes determining a programming step size for a word line of a memory in a data storage device. The programming step size is determined at least partially based on a count of memory elements of the word line to be programmed to a particular state.

Abstract: A method in a data storage device receiving data including a data block and main error correction coding (ECC) data for the data block. The data block includes a first sub-block of data and a second sub-block of data. The method also includes initiating an ECC operation to process the data block using the main ECC data. In response to the ECC operation indicating uncorrectable errors in the data block, first additional ECC data that is external to the data block is retrieved and a second ECC operation is initiated to process the first sub-block of data using the first additional ECC data.

Abstract: A method of managing wear leveling in a data storage device includes determining whether a reliability measurement associated with a first portion of a first nonvolatile memory die satisfies a threshold. The first nonvolatile memory die is included in a plurality of memory dies. The method includes, in response to determining that the reliability measurement associated with the first portion of the first nonvolatile memory die satisfies the threshold, transferring first data from the first portion of the first nonvolatile memory die to a second nonvolatile memory die of the plurality of memory dies.

Abstract: In a particular embodiment, at a controller coupled to a memory array, a method includes receiving an indication that a first group of data bits read from the memory array includes errors that are uncorrectable by an error correction coding (ECC) engine. A count of the first group of data bits having a particular bit value may be compared to a prior count of data bits having the particular bit value. In response to determining that the count exceeds the prior count, a bit of the first group of data bits that has the particular bit value and that corresponds to a same memory cell as a corrected data bit of a second group of data bits is identified. A value of the identified bit of the first group may be changed to generate an adjusted group of data bits. The adjusted group of data bits may be provided to the ECC engine.

Abstract: A method in a memory device includes receiving data including a data block and main error correction coding (ECC) data for the data block. The data block includes a first sub-block of data and first ECC data corresponding to the first sub-block. An ECC operation is initiated to process the data block using the main ECC data. In response to the ECC operation indicating uncorrectable errors in the data, a first sub-block ECC operation is initiated to process the first sub-block of data using the first ECC data.

Abstract: A data storage device includes a memory including a plurality of storage elements. The memory is configured to read a group of the storage elements using a first read voltage to obtain a first plurality of bit values. A controller is coupled to the memory. The controller is configured to initiate a first error correction code (ECC) procedure on the first plurality of bit values. In response to the first ECC procedure determining that the first plurality of bit values is not correctable, the controller is further configured to instruct the memory to read the group of the storage elements using a second read voltage to obtain a second plurality of bit values, and to change one or more values of the first plurality of bit values to corresponding values of the second plurality of bit values to generate a first plurality of corrected bit values.

Abstract: An apparatus includes a first memory die including a first memory core, a second memory die including a second memory core, and a periphery die coupled to the first memory die and to the second memory die. The periphery die includes periphery circuitry corresponding to the first memory core and periphery circuitry corresponding to the second memory core. The periphery die is responsive to a memory controller and configured to initiate a first memory operation at the first memory core and a second memory operation at the second memory core.

Abstract: An apparatus includes a first semiconductor device including a NAND flash memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the NAND flash memory core.

Abstract: An apparatus includes a first semiconductor device including a memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the memory core. The second semiconductor device includes a second serializer/deserializer communication interface coupled to a first serializer/deserializer communication interface of a memory controller.

Abstract: A method includes reading data from a data area of a word line and reading first ECC data from an ECC area of the word line. The method also includes, in response to determining that an error indicator exceeds a threshold, storing second ECC data in the ECC area. The second ECC data corresponds to a subsection of the data area.