Abstract: A data storage device includes non-volatile memory and a controller. The controller is configured to read first data from the non-volatile memory. The first data indicates a first count of storage elements of the group that have a first activation status when sensed with a first reference voltage at a first time. The controller is configured to read second data from the non-volatile memory. The second data indicates a second count of storage elements of the group that have the first activation status when sensed with the first reference voltage at a second time. The controller is configured to generate an updated first reference voltage at least partially based on a difference between the first count and the second count and based on one or more parameters corresponding to a distribution of threshold voltages of storage elements at the first time.

Abstract: A method includes, at a non-volatile memory having a three dimensional (3D) memory configuration, performing an erase operation. Performing the erase operation includes providing a first control signal to isolate a first portion of a string of the non-volatile memory from a second portion of the string. Performing the erase operation further includes providing a first erase signal to erase the second portion of the string while data is maintained at the first portion of the string.

Abstract: A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes writing first data at a first physical page that is disposed within the memory at a first distance from a substrate of the memory. The first data is written at the first physical page using a first write technique. The method further includes writing second data at a second physical page that is disposed within the memory at a second distance from the substrate. The second distance is greater than the first distance. The second data is written at the second physical page using a second write technique that is different than the first write technique.

Abstract: A storage device includes a controller and a non-volatile memory that includes a three-dimensional (3D) memory. A method performed in the data storage device includes receiving, at the controller, first data to be stored at the non-volatile memory. The method further includes sending, from the controller, the first data, first dummy data, and second dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory. The single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states. The first dummy data and the second dummy data prevent a storage element of the single physical page from being programmed to a particular voltage state of the multiple voltage states.

Abstract: A data storage device includes a memory die. The memory die includes parity circuitry and a memory having a three-dimensional (3D) memory configuration. The memory includes a first block, a second block, and a third block. A method includes generating parity information based on first data associated with a first word line of the first block and further based on second data associated with a second word line of the second block. The parity information is generated by the parity circuitry. The method further includes writing the parity information to a third word line of the third block.

Abstract: A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes encoding first data to be stored at a first physical page. The first physical page is disposed within the memory at a first distance from a substrate of the memory, and the first data is encoded using a first encoding technique. The method further includes encoding second data to be stored at a second physical page. The second physical page is disposed within the memory at a second distance from the substrate that is greater than the first distance. The second data is encoded using a second encoding technique that is different than the first encoding technique.

Abstract: A data storage device includes a memory die. The memory die includes parity circuitry and a memory having a three-dimensional (3D) memory configuration. The memory includes a first block, a second block, and a third block. A method includes generating parity information based on first data associated with a first word line of the first block and further based on second data associated with a second word line of the second block. The parity information is generated by the parity circuitry. The method further includes writing the parity information to a third word line of the third block.

Abstract: A data storage device includes a resistive random access memory (ReRAM). A method includes storing data in the ReRAM by performing a first number of write operations to a storage region of the ReRAM. The storage region is tracked by a counter. The method further includes incrementing a value of the counter a second number of times responsive to storing the data in storage region. The second number is less than the first number.

Abstract: A data storage device includes a memory. A method includes initiating a decoding process at the data storage device to decode data sensed from the memory. The method further includes accessing a mapping table to determine a variable node message value during a variable node processing operation of the decoding process.

Abstract: An apparatus includes a first semiconductor device including a memory core. The apparatus also includes a second semiconductor device including periphery circuitry associated with the memory core. The second semiconductor device includes a second serializer/deserializer communication interface coupled to a first serializer/deserializer communication interface of a memory controller.

Abstract: A data storage device includes a non-volatile memory. The non-volatile memory may include a first word line, a second word line, and a third word line. The second word line may be between the first word line and the third word line. The non-volatile memory may further include a first string and a second string. The first string may be adjacent to the second string. The data storage device may further include circuitry configured to store parity information at a fourth word line of the non-volatile memory. The parity information may correspond to a combination of first data associated with the first word line and the first string, second data associated with the first word line and the second string, third data associated with the third word line and the first string, and fourth data associated with the third word line and the second string.

Abstract: A method includes, at a non-volatile memory having a three dimensional (3D) memory configuration, performing an erase operation. Performing the erase operation includes providing a first control signal to isolate a first portion of a string of the non-volatile memory from a second portion of the string. Performing the erase operation further includes providing a first erase signal to erase the second portion of the string while data is maintained at the first portion of the string.

Abstract: A data storage device includes a memory that has a three-dimensional (3D) memory configuration, a controller, and a plurality of memory ports. The controller is configured to read mapping data from the memory. The mapping data maps the plurality of memory ports to the plurality of storage elements. The controller is further configured to, in response to receiving a command associated with a logical address, determine a physical address of the memory corresponding to the logical address, the physical address corresponding to a group of storage elements of the plurality of storage elements. The controller is further configured to select a memory port of the plurality of memory ports, where the memory port is mapped to the group of storage elements. The controller is further configured to access the group of storage elements via the memory port to perform first command.

Abstract: A data storage device includes a non-volatile memory and a controller operationally coupled to the non-volatile memory. The controller is configured to access information stored at the non-volatile memory. The information includes a user data portion and an error correcting code (ECC) portion corresponding to the user data portion. The controller is further configured to modify the ECC portion in response to an error rate associated with the information exceeding a threshold. The one or more ECC parameters are modified without erasing or re-programming the user data portion.

Abstract: A method performed at a non-volatile memory of a data storage device includes determining, at error detection circuitry included in the non-volatile memory, an indication of a number of errors associated with a portion of the non-volatile memory. The method also includes providing the indication to a controller of the data storage device, where the controller includes error correction circuitry. The non-volatile memory has a 3D configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area disposed above a silicon substrate. The non-volatile memory includes circuitry associated with operation of the memory cells.

Abstract: A method of managing wear leveling in a data storage device includes determining whether a reliability measurement associated with a first portion of a first nonvolatile memory die satisfies a threshold. The first nonvolatile memory die is included in a plurality of memory dies. The method includes, in response to determining that the reliability measurement associated with the first portion of the first nonvolatile memory die satisfies the threshold, transferring first data from the first portion of the first nonvolatile memory die to a second nonvolatile memory die of the plurality of memory dies.

Abstract: A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes writing first data at a first physical page that is disposed within the memory at a first distance from a substrate of the memory. The first data is written at the first physical page using a first write technique. The method further includes writing second data at a second physical page that is disposed within the memory at a second distance from the substrate. The second distance is greater than the first distance. The second data is written at the second physical page using a second write technique that is different than the first write technique.

Abstract: A data storage device includes a memory having a three-dimensional (3D) memory configuration. A method includes encoding first data to be stored at a first physical page. The first physical page is disposed within the memory at a first distance from a substrate of the memory, and the first data is encoded using a first encoding technique. The method further includes encoding second data to be stored at a second physical page. The second physical page is disposed within the memory at a second distance from the substrate that is greater than the first distance. The second data is encoded using a second encoding technique that is different than the first encoding technique.

Abstract: An apparatus includes a semiconductor device that includes a multi-ported three-dimensional (3D) memory. The multi-ported 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The multi-ported 3D memory includes circuitry associated with operation of the multiple memory cells.

Abstract: An apparatus includes a first semiconductor device including a three-dimensional (3D) memory. The 3D memory includes multiple memory cells arranged in multiple physical levels above a substrate. The 3D memory further includes circuitry associated with operation of the multiple memory cells. The apparatus includes a second semiconductor device coupled to the first semiconductor device. The second semiconductor device includes a charge pump, and the 3D memory does not include a charge pump.