Patents by Inventor Manzur Gill

Manzur Gill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7223688
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Grant
    Filed: March 14, 2003
    Date of Patent: May 29, 2007
    Assignee: Ovonyx, Inc.
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Patent number: 7157304
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Grant
    Filed: May 5, 2004
    Date of Patent: January 2, 2007
    Assignee: Ovonyx, Inc.
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Publication number: 20060056233
    Abstract: A phase change memory may be utilized to replace NAND flash memory in combination with a buffer such as a static random access memory and/or a dynamic random access memory. Because the phase change memory may have sufficiently low cost, it may replace low cost NAND flash and because the phase change memory has sufficiently high performance, it can also replace the dynamic random access or static random access buffer memory sometimes packaged with the NAND flash memory. Thus, a relatively low cost, high performance solution is achieved in a relatively small package size in some embodiments.
    Type: Application
    Filed: September 10, 2004
    Publication date: March 16, 2006
    Inventors: Ward Parkinson, Manzur Gill
  • Patent number: 6995446
    Abstract: A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a guard ring may be utilized.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: February 7, 2006
    Assignee: Ovonyx, Inc.
    Inventors: Ilya Karpov, Manzur Gill
  • Patent number: 6912146
    Abstract: An NMOS field effect transistor may be utilized to drive the memory cell of a phase change memory. As a result, the leakage current may be reduced dramatically.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: June 28, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Manzur Gill, Tyler Lowrey
  • Patent number: 6836423
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: December 28, 2004
    Assignee: Ovonyx, Inc.
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Publication number: 20040208039
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Application
    Filed: May 5, 2004
    Publication date: October 21, 2004
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Patent number: 6791107
    Abstract: The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
    Type: Grant
    Filed: January 3, 2003
    Date of Patent: September 14, 2004
    Assignee: Ovonyx, Inc.
    Inventors: Manzur Gill, Tyler Lowrey
  • Publication number: 20040113183
    Abstract: A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a guard ring may be utilized.
    Type: Application
    Filed: December 13, 2002
    Publication date: June 17, 2004
    Inventors: Ilya Karpov, Manzur Gill
  • Publication number: 20040113134
    Abstract: An NMOS field effect transistor may be utilized to drive the memory cell of a phase change memory. As a result, the leakage current may be reduced dramatically.
    Type: Application
    Filed: December 13, 2002
    Publication date: June 17, 2004
    Inventors: Manzur Gill, Tyler Lowrey
  • Patent number: 6625054
    Abstract: Briefly, in accordance with an embodiment of the invention, a method and an apparatus to program a multi level cell (MLC) phase change material is provided.
    Type: Grant
    Filed: December 28, 2001
    Date of Patent: September 23, 2003
    Assignee: Intel Corporation
    Inventors: Tyler Lowrey, Manzur Gill
  • Publication number: 20030156482
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Application
    Filed: March 14, 2003
    Publication date: August 21, 2003
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Publication number: 20030132501
    Abstract: The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
    Type: Application
    Filed: January 3, 2003
    Publication date: July 17, 2003
    Inventors: Manzur Gill, Tyler Lowrey
  • Publication number: 20030123277
    Abstract: Briefly, in accordance with an embodiment of the invention, a method and an apparatus to program a multi level cell (MLC) phase change material is provided.
    Type: Application
    Filed: December 28, 2001
    Publication date: July 3, 2003
    Inventors: Tyler Lowrey, Manzur Gill
  • Patent number: 6567293
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: May 20, 2003
    Assignee: Ovonyx, Inc.
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Publication number: 20030090922
    Abstract: An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substrate, a plurality of electrodes coupled to the first conductor, introducing a phase change material over the plurality of electrodes and in electrical communication with the plurality of electrodes, and introducing a second conductor over the phase change material and coupled to the phase change material.
    Type: Application
    Filed: October 25, 2002
    Publication date: May 15, 2003
    Inventors: Tyler A. Lowrey, Manzur Gill
  • Publication number: 20030081451
    Abstract: A technique includes, in response to a request to write data to memory cells of a phase change memory device, placing the memory cells in a state that is shared in common among the memory cells. Also, in response to this request, the data is written to the memory cells.
    Type: Application
    Filed: October 30, 2001
    Publication date: May 1, 2003
    Inventors: Tyler A. Lowrey, Ward D. Parkinson, Manzur Gill
  • Patent number: 6545907
    Abstract: A technique includes, in response to a request to write data to memory cells of a phase change memory device, placing the memory cells in a state that is shared in common among the memory cells. Also, in response to this request, the data is written to the memory cells.
    Type: Grant
    Filed: October 30, 2001
    Date of Patent: April 8, 2003
    Assignee: Ovonyx, Inc.
    Inventors: Tyler A. Lowrey, Ward D. Parkinson, Manzur Gill
  • Patent number: 6531373
    Abstract: The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
    Type: Grant
    Filed: December 27, 2000
    Date of Patent: March 11, 2003
    Assignee: Ovonyx, Inc.
    Inventors: Manzur Gill, Tyler Lowrey
  • Publication number: 20020081804
    Abstract: The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
    Type: Application
    Filed: December 27, 2000
    Publication date: June 27, 2002
    Inventors: Manzur Gill, Tyler Lowrey