Abstract: A semiconductor device may include a first chip with a first wafer and a first dielectric layer, and a second chip that includes a second wafer and a second dielectric layer, the second chip having a backside surface and a frontside surface opposed to the backside surface and bonded to the first chip at the frontside surface to define a bond line between the first dielectric layer and the second dielectric layer. The semiconductor device may include a die seal layer on the backside surface having a die seal ground contact in contact with the second wafer, and an electrostatic discharge path that includes the die seal layer, the die seal ground contact, a first die seal in the first dielectric layer, a second die seal in the second dielectric layer, and a hybrid bond connecting the first die seal and the second die seal through the bond line.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: A semiconductor device may include a first chip that includes a first wafer and a first dielectric layer disposed thereon. The semiconductor device may include a second chip that includes a second wafer and a second dielectric layer disposed thereon, the second chip having a backside surface and a frontside surface opposed to the backside surface, the second chip being bonded to the first chip at the frontside surface to define a bond line between the first dielectric layer and the second dielectric layer. An opening through the backside surface of the second chip may extend into the second dielectric layer, and a bond pad may be disposed within the second dielectric layer between the second wafer and the bond line.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

Abstract: Disclosed is a functional garment that is designed as an article of clothing usable with an infant. The garment is designed to be practical yet functional while attending to infants. The disclosure serves a novel way to care for infants by allowing parents to handle often difficult tasks of managing infants in a welcoming manner. The disclosure includes a top and bottom portion that can be attached or detached by utilizing various attachments to secure the embodiment, a hood, drawstring, two sleeves, two leg portions.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

Abstract: An integrated circuit package (34, 34?, 34?) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: An image sensor may include a sensor chip that is bonded to an application-specific integrated circuit (ASIC) chip. A bond pad for the image sensor may be formed in the ASIC chip and exposed through a trench in the sensor chip. The image sensor may include a conductive light shield at a periphery of the image sensor to shield optically black pixels. An opaque layer may be formed over the conductive light shield to mitigate reflections off the conductive light shield. An anti-reflective layer may be formed over the pixel array. The anti-reflective layer may have a different thickness over the pixel array than in the trench for the bond pad.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: Imaging systems, and image pixels and related methods. At least one example is an image sensor comprising a plurality of image pixels. Each image pixel may comprise: a color router defining a router collection area on an upper surface; a first photosensitive region beneath the color router; a second photosensitive region beneath the color router; and a third photosensitive region beneath the color router. The color router may be configured to route photons of a first wavelength received at the router collection area to the first photosensitive region, route photons of a second wavelength received at the router collection area to the second photosensitive region, and route photons of a third wavelength received at the router collection area to the third photosensitive region.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). Each SPAD may be overlapped by multiple microlenses. The microlenses over each SPAD may include first microlenses having a first size over a central portion of the SPAD and second microlenses having a second size that is greater than the first size over a peripheral area of the SPAD. The second microlenses may be spherical microlenses or cylindrical microlenses. The first microlenses may be aligned with underlying light scattering structures to improve the efficiency of the light scattering structures. The second microlenses may partially overlap isolation structures to direct light away from the isolation structures and towards the SPAD.