Abstract: An integrated circuit package (34, 34?, 34?) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).

Abstract: A crop prediction system performs various machine learning operations to predict crop production and to identify a set of farming operations that, if performed, optimize crop production. The crop prediction system uses crop prediction models trained using various machine learning operations based on geographic and agronomic information. Responsive to receiving a request from a grower, the crop prediction system can access information representation of a portion of land corresponding to the request, such as the location of the land and corresponding weather conditions and soil composition. The crop prediction system applies one or more crop prediction models to the access information to predict a crop production and identify an optimized set of farming operations for the grower to perform.

Abstract: The current invention relates to a method of separating polyunsaturated fatty acids containing lipids from a lipids containing biomass.

Abstract: Systems and methods are described for enabling graceful recovery of network connections in a virtual machine instance that has been migrated or temporarily halted. To prevent the virtual machine instance from attempting to reuse open connections, which might fail due to migration or halting, a host device identifies open connections just prior to halting the virtual machine instance on the host, and transmits to the virtual machine instance termination signals for the open connections. The host device may further transmit termination signals to the other parties to such connections. Each termination signal may be formatted so as to appear to originate from the other party to the connection, causing both parties to synchronize their knowledge of the connection. On reactivation, the virtual machine instance can recovery the connections without errors associated with attempted utilization of broken connections.

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

Abstract: Described herein are techniques of using machine learning to automatically extract clinical variable values for subjects from clinical record data. The techniques designate certain clinical variables as hybrid variables that can be assigned values by machine learning model prediction. The techniques process, using a machine learning model trained to predict a value of a hybrid variable, clinical record data associated with a subject to obtain a predicted hybrid variable value and an associated confidence score. The techniques set the value of the hybrid variable for the subject to the predicted hybrid variable value when the model prediction is of sufficiently high confidence.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: An image sensor may include a sensor chip that is bonded to an application-specific integrated circuit (ASIC) chip. A bond pad for the image sensor may be formed in the ASIC chip and exposed through a trench in the sensor chip. The image sensor may include a conductive light shield at a periphery of the image sensor to shield optically black pixels. An opaque layer may be formed over the conductive light shield to mitigate reflections off the conductive light shield. An anti-reflective layer may be formed over the pixel array. The anti-reflective layer may have a different thickness over the pixel array than in the trench for the bond pad.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: Imaging systems, and image pixels and related methods. At least one example is an image sensor comprising a plurality of image pixels. Each image pixel may comprise: a color router defining a router collection area on an upper surface; a first photosensitive region beneath the color router; a second photosensitive region beneath the color router; and a third photosensitive region beneath the color router. The color router may be configured to route photons of a first wavelength received at the router collection area to the first photosensitive region, route photons of a second wavelength received at the router collection area to the second photosensitive region, and route photons of a third wavelength received at the router collection area to the third photosensitive region.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). Each SPAD may be overlapped by multiple microlenses. The microlenses over each SPAD may include first microlenses having a first size over a central portion of the SPAD and second microlenses having a second size that is greater than the first size over a peripheral area of the SPAD. The second microlenses may be spherical microlenses or cylindrical microlenses. The first microlenses may be aligned with underlying light scattering structures to improve the efficiency of the light scattering structures. The second microlenses may partially overlap isolation structures to direct light away from the isolation structures and towards the SPAD.

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

Abstract: Systems and methods for providing a head-up display using a holographic element formed on a visor of a wearable element (e.g., a helmet) are disclosed. Light projectors along with corresponding optics are positioned on both sides of a user's head within the wearable element. Light from a light projector is directed towards the holographic element to reflect towards the eye on the opposite side of the head from the light projector. With light reflecting from both light projectors, images are perceived by the user is being positioned on a virtual screen where the virtual screen is positioned outside the wearable element. Images on the virtual screen are displayed stereoscopically and with a large field of view for the user.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.