Abstract: At least one compound selected from the group consisting of silane compounds with the formulas Si(NHRi)4 and SiH(NHRi)3 (each Ri in each of the preceding formulas is independently selected from C1 to C4 hydrocarbyl) is used as a precursor for silicon nitride, silicon oxynitride, and silicon oxide films.

Abstract: (Problem) To provide a method for the production of silicon nitride and silicon oxynitride films by CVD technology, wherein said method provides acceptable film-deposition rates even at lower temperatures and is not accompanied by the production of large amounts of ammonium chloride. (Solution) Use of a hydrocarbylaminodisilane compound with the formula (R0)3—Si—(R0)3 (I) {each R0 is independently selected from the hydrogen atom chlorine atom, and —NR1(R2) groups (wherein R1 and R2 are each independently selected from the hydrogen atom and C1 to C4 hydrocarbyl with the proviso that R1 and R2 may not both be the hydrogen atom) and at least one R0 is the —NR1(R2) group} as a precursor for silicon nitride and silicon oxynitride.

Abstract: To provide a process gas supply mechanism for ALCVD systems that enables the high speed switching of process gases without accompanying particulate contamination of the treatment substrate. The ALCVD system is provided with a CVD treatment section and a process gas supply section. The process gas supply section contains a reactant gas line and a carrier gas line; these are combined to form a joint flow line. A vent line is connected to the reactant gas line upstream from the joint flow position. A stop valve SV and a needle valve NV are disposed in the vent line. This needle valve NV functions as a setting means in order to set the flow rate of the gas flowing in the vent line. The stop valve SV is driven through repetitive switching operations by a drive control element, thereby effecting supply and nonsupply of the reactant gas.

Abstract: Provided is a copper source liquid useful in MOCVD processes for forming copper thin films on semiconductor wafers. The source liquid comprises water and a source component wherein the source component contains at least 90 weight % Cu(hfac)TMVS and the copper source liquid preferably contains no more than 10 weight % water. The dissolved oxygen concentration in the water is established at no more than 0.5 ppm relative to the water. Decomposition of the Cu(hfac)TMVS is controlled in the present invention by lowering the dissolved oxygen concentration in the water. The resulting copper source liquid allows for improved reproducibility of CVD film quality by raising the capacity to control the amount of water addition to the copper source liquid used in MOCVD processes.

Abstract: Provided is a copper source liquid useful in MOCVD processes for forming copper thin films on semiconductor wafers. The source liquid comprises water and a source component wherein the source component contains at least 90 weight % Cu(hfac)TMVS and the copper source liquid preferably contains no more than 10 weight % water. The dissolved oxygen concentration in the water is established at no more than 0.5 ppm relative to the water. Decomposition of the Cu(hfac)TMVS is controlled in the present invention by lowering the dissolved oxygen concentration in the water. The resulting copper source liquid allows for improved reproducibility of CVD film quality by raising the capacity to control the amount of water addition to the copper source liquid used in MOCVD processes.

Abstract: The subject of the present invention is a method and a device for filling a distribution line (20) with corrosive gas. The said method is a method for filling with gas, with passivation, a line (20) for distributing corrosive gas, which line is intended to distribute the said corrosive gas to a system (3) located immediately downstream of the said line (20); the said method comprising: prior conditioning of the said line (20); the actual filling of the said line (20) with the said corrosive gas known as an active gas. Characteristically, the said actual filling with gas comprises: at least one cycle of filling the said line (20) with active gas as far as immediately upstream of the system (3) and of removing the said active gas thus introduced into the said line (20); the said removal being performed without the said active gas passing through the said system (3); followed by the final filling of the said line (20) with gas so as to make the said gas available to the said system (3).

Abstract: To provide a process gas supply mechanism for ALCVD systems that enables the high speed switching of process gases without accompanying particulate contamination of the treatment substrate.

Abstract: Provided are novel gas delivery apparatuses. In accordance with one aspect of the invention, the apparatus features: a gas line network for delivering a gas from a gas source to a point of use; means for performing one or more vacuum/purge cycle in the gas line network, the vacuum/purge cycle including a vacuum phase and a purge phase; and a measurement system for detecting a gas phase molecular species in the gas line network during the vacuum phase and/or the purge phase of the vacuum/purge cycle. Also provided are methods for monitoring a gas phase molecular species in a gas delivery apparatus. The invention allows for replacement of components in a gas delivery system in a manner which is safe, and which avoids detrimental impact on the process being run and on the equipment.

Abstract: Provided is a novel semiconductor processing system. The system includes a process chamber for treating a semiconductor substrate with one or more process gases comprising water vapor, means for delivering the water vapor or one or more precursors thereof to the process chamber, an exhaust conduit connected to the process chamber, an absorption spectroscopy system for sensing water vapor in a sample region, and a control system which controls water vapor content in the process chamber. Also provided is a method for controlling the water vapor level in a semiconductor process chamber. The system and method allow for measurement and control of the water vapor level in a semiconductor processing chamber in which water vapor is present as a process gas.

Abstract: Provided are an apparatus and method for the distribution of treatment liquids. The apparatus and method enable the continuous monitoring of the level of a treatment liquid by an inexpensive mechanism that has little capacity to contaminate the treatment liquid. The apparatus for the distribution of treatment liquids contains a gastight distribution tank that is connected through a discharge line to designated facilities, and also contains a gastight gas container that is connected through a pressurization line to the distribution tank. A pressure regulator is provided in the pressurization line and the pressurization gas is thereby supplied from the gas container to the distribution tank at a constant and specified supply pressure. This supply of pressurization gas induces the pressure-transport of the treatment liquid from the distribution tank through the discharge line.

Abstract: Provided is a process for measuring the amount of impurities in a gas sample filling a laser absorption spectroscopy analysis cell. The process includes calculating the value of a characteristic representative of the absorbance of the gas sample, from a measurement of the gas sample at a single given pressure, and quantifying the impurities on the basis of a predetermined law for the variation of the characteristic as a function of the amount of impurities. The characteristic is the ratio of the difference between the luminous intensity (Iana) of a light beam transmitted through the gas and the luminous intensity (Iref) of the incident beam to the luminous intensity (Iref) of the incident beam. The impurities are quantified on the basis of a value of the coefficient of proportionality between the amount of impurities and the characteristic, determined on the basis of a table of variation of the characteristic as a function of pressure, for a given amount of impurities.

Abstract: Provided is a novel method of and system for recovering and recirculating a deuterium-containing gas. According to the inventive method, a deuterium-containing feed gas is introduced into a chamber. An exhaust gas containing deuterium is removed from the chamber. The deuterium concentration of the exhaust gas is adjusted to a predetermined value, thereby producing a concentration-adjusted gas stream. Finally, the concentration-adjusted gas stream is introduced into the chamber as the deuterium-containing feed gas. The invention makes the use of deuterium, for example, in the mass production of semiconductor devices, commercially feasible.

Abstract: A device for regulating the flow of gases having substantially different molar masses, comprisingan always-open feed line connected to a gas source at a defined pressure and to an apparatusa first calibrated restriction placed in the feed line,a bypass line connected via at least one of its two ends to a valve of a branching valve or a 4-way valve, placed in the feed line, and via the other end to a point of connection to the feed line, the valve being switchable between a first position for bringing the feed line into communication with the bypass line and a second position for isolating the bypass line from the feed line, anda second calibrated restriction placed in the bypass line, the first calibrated restriction being placed on the feed line portion lying between the valve and the point of connection.

Abstract: Compositions which comprise one or more B epitopes of the envelope glycoprotein of a retrovirus and one or more T epitope of the envelope glycoprotein from a distinct retrovirus, or a Tepitope from a different protein of the same retrovirus as the B epitope. In particular, the retrovirus is a human immunodeficiency virus (HIV) or a simian immunodeficiency virus (SIV), human T-cell lymphotropic virus type I (HTLV-I), or a human T-cell lymphotropic virus type II (HTLV-II).

Abstract: A method of delivering a pure gas charged with a predetermined quantity of at least one gaseous impurity to an apparatus, comprising the steps of mixing at least two different auxiliary gases, including the impurity to form a mixture, diluting a sampled quantity of the mixture in the pure gas in a predetermined manner, delivering the pure gas charged with the impurity to the apparatus, wherein the auxiliary gases are stored in a reservoir in the form of a mixture of known composition, most of the auxiliary gases in the mixture having volume concentrations substantially of the same order of magnitude.

Abstract: A selection device for delivering one of two gases to an apparatus includes an apparatus having an inlet and an outlet, and a gas delivery line connected to the inlet of the apparatus. A first feed line and a second feed line for respectively feeding a first and a second gas are provided. A first purge line and a second purge line are also provided, the first feed line being connected to the first purge line and the second feed line being connected to the second purge line. A common connection line connects the first and the second feed lines to the gas delivery line. An additional purge line is connected to the outlet of the apparatus. A first element, a second element, and a third element for creating a pressure drop are disposed in the first, the second, and the additional purge lines, respectively, the first element for creating a pressure drop and the third element for creating a pressure drop being flow-regulating elements, the second element for creating a pressure drop being a backpressure regulator.

Abstract: A device for delivering one of a plurality of gases to an apparatus includes at least two valves. Each valve includes a first conduit permanently connected by one end thereof to an associated sampling line and, by another end thereof, to an associated purge line. Each valve includes a second conduit and an actuator which can be switched between bringing the first conduit into communication with the second conduit and a position for isolating the first conduit from the second conduit. At least the second conduit is free of flow-stagnation volumes. The second conduits of the valves are placed in series in a common gas delivery line for delivering gas to the apparatus. The end of the common gas delivery line opposite the apparatus emerges in an associated purge line. Each purge line passes through an element for creating a pressure drop. A use of the device is as a feed for trace impurities analyzer an atmospheric pressure ionization mass spectrometer or a particles analyzer.

Abstract: A device for delivering one of a plurality of gases to an apparatus includes at least two valves. Each valve includes a first conduit permanently connected by one end thereof to an associated sampling line and, by another end thereof, to an associated purge line. Each valve includes a second conduit and an actuator which can be switched between bringing the first conduit into communication with the second conduit and a position for isolating the first conduit from the second conduit. At least the second conduit is free of flow-stagnation volumes. The second conduits of the valves are placed in series in a common line for delivering gas to the apparatus. The end of the common line opposite the apparatus emerges in an associated purge line. Each purge line passes through an element for creating a pressure drop. A use of the device is as a feed for an ionization mass spectrometer.

Abstract: The invention comprises a method of enhancing the immunogenicity of an envelope virus glycoprotein in a host organism. The method comprises administering to the host a composition comprising the virus envelope glycoprotein and at least one oligopeptide derived from the amino acid sequence of the envelope glycoprotein, wherein the oligopeptide contains or corresponds to virus-neutralization epitopes. The method and compositions are useful for vaccinating against viruses, such as HIV, SIV, HTLV-I, HTLV-II, or any retrovirus capable of inducing AIDS in its natural host.

Abstract: This invention relates to an immunogenic composition comprising a viral vector. The genome of the viral vector comprises a functional origin of replication of a poxvirus, a DNA fragment encoding a non-cleavable gp160, a DNA fragment encoding a signal peptide, and a promoter for expressing DNA fragments in mammalian cells.